The adsorption of phenylphosphonic acid (PPA) on GaAs (100) surfaces from solutions in acetonitrile/water mixtures was studied using Fourier transform infrared spectroscopy in attenuated total reflection in multiple internal reflections (ATR/MIR), X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS), and atomic force microscopy (AFM). ATR/MIR in situ showed that the accumulation of PPA molecules near the GaAs surface increased with the water concentration in the solution. For water contents lower than 4%, ATR/MIR and XPS results are consistent with the formation of a low-density monolayer. A mechanism is proposed for H2O percentages lower than 4% involving the creation of interfacial bonds through a Brønsted acid-base reaction, which involves the surface hydroxyl groups most probably bound to Ga. It was found that the morphology of the final layer depended strongly on the water concentration in the adsorbing solution. For water concentrations equal to or higher than 5%, the amount of adsorbed molecules drastically increased and was accompanied by modifications in the infrared spectral region corresponding to P-O and P=O. This sudden change indicates a deprotonation of the acid. XPS studies revealed the presence of extra oxygen atoms as well as gallium species in the layer, leading to the conclusion that phosphonate and hydrogenophosphonate ions are present in the PPA layer intercalated with H3O+ and Ga3+ ions. This mechanism enables the formation of layers approximately 10 times thicker than those obtained with lower H2O percentages. HREELS indicated that the surface is composed of regions covered by PPA layers and uncovered regions, but the uncovered regions disappeared for water contents equal to or higher than 5%. XPS results are interpreted using a model consisting of a monolayer partially covering the surface and a thick layer. This model is consistent with AFM images revealing roughness on the order of 7 nm for the thick layer and 0.2-0.5 nm for the thin layer. Sonication proves to be an effective method for reducing layer thickness.

To enable the use of GaAs-based devices as chemical sensors, their surfaces must be chemically modified. Reproducible adsorption of molecules in the liquid phase on the GaAs surfaces requires controlled etching procedures. Several analytical methods were applied, including Fourier transform infrared spectroscopy (FTIRS) in attenuated total reflection and multiple internal reflection mode (ATR/MIR), high-resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) for the analysis of GaAs (100) samples treated with different wet-etching procedures. The assignment of the different features due to surface oxides present in the vibrational and XPS spectra was made by comparison with those of powdered oxides (Ga2O3, As2O3 and As2O5). The etching procedures here described, namely, those using low concentration HF solutions, substantially decrease the amount of arsenic oxides and aliphatic contaminants present in the GaAs (100) surfaces and completely remove gallium oxides. The mean thickness of the surface oxide layer drops from 1.6 nm in the raw sample to 0.1 nm after etching. However, in presence of light, water dissolution of arsenic oxides is enhanced, and oxidized species of gallium cover the surface. Copyright (c) 2005 John Wiley & Sons, Ltd.

Gallium arsenide coating by molecular layers is a of increasing interest both for its surface passivation and for its use as a chemical or biochemical sensor. The surface state of GaAs and the nature of the molecular functionality to be bound to the surface are very important to assure good and durable adhesion. This work, using both the vibrational and the electronic energy loss range of high resolution electron energy loss spectra, showed that the water content in the solvent – acetonitrile – has a dramatic effect on the amount of phenylphosphonic acid molecules adsorbed on the GaAs substrate. There is a poor molecular adsorption for water contents ranging from 0 to 4% volume: HREELS spectrum is always a combination of the substrate and the adsorbed molecule spectra. For a water content of 5% there is an abrupt jump in the HREELS spectra shape: they become typical of phenyl groups in the electronic region. In the vibrational region, the typical C-H stretching peaks of aliphatic chains disappear showing that the extreme surface is exclusively covered by phenyl functions. Also for the samples, where a large adsorption occurs, surfaces become negatively charged under electron irradiation showing the existence of a large number of traps for incident electrons. Sonication of such well covered substrates destroys intermolecular bonds but keeps molecules that are chemically bound to the substrate.