Epitaxial growth of III/V compounds with tight band gap engineering is essential for the realization of efficient optoelectronic devices. Using MOVPE, high quality materials have been grown with anomalous low band gap energy. The order/disorder phenomena and their relation to the band gap energy in the GaInP/AlGaInP system are reported. The effect of the growth parameters on the ordered phase and the band gap Eg will be presented by using TEM and PL characterizations. The growth models will be discussed. The importance of the ordering phenomena will be illustrated by short wavelength laser application, the emission wavelength being as low as 650 nm at 300 K. And a possible future laser structure will be proposed.

The effect of substrate misorientation on {111} ordering in GaxIn1−xP epilayers grown on (001) GaAs substrates by metalorganic vapor-phase epitaxy has been studied by transmission electron microscopy. Among the four possible variants, only the { 1/2 1/2 1/2 }B are observed, and the substrate misorientation toward (11̄0) can disymmetrize the two B variants to a point such that only one remains. We show that the diffuse intensity observed along (001) originates from a modulation of the degree of order. When the domain size is comparable to the characteristic length of the modulation, domain boundaries and antiphase boundaries contribute to the diffuse scattering, giving rise to the reported wavy diffuse intensity. We propose a few simple rules controlling the growth process at the atomistic level, from which the absence of the { 1/2 1/2 1/2 }A variants, as well as the selection effect of the [11̄0] steps on the two remaining variants may be explained. From existing literature, the validity of these rules seems to be rather general. Finally, considering reports that the ordered structure observed here is not at equilibrium, we suggest that the latter is growth induced. The necessary conditions for such an ordering mechanism to operate are identified.

The effect of substrate misorientation on {111} ordering in GaxIn1−xP epilayers grown on (001) GaAs substrates by metalorganic vapor‐phase epitaxy has been studied by transmission electron microscopy. Among the four possible variants, only the { 1/2 1/2 1/2 }B are observed, and the substrate misorientation toward (110) can disymmetrize the two B variants to a point such that only one remains. We show that the diffuse intensity observed along (001) originates from a modulation of the degree of order. When the domain size is comparable to the characteristic length of the modulation, domain boundaries and antiphase boundaries contribute to the diffuse scattering, giving rise to the reported wavy diffuse intensity. We propose a few simple rules controlling the growth process at the atomistic level, from which the absence of the { 1/2 1/2 1/2 }A variants, as well as the selection effect of the [110] steps on the two remaining variants may be explained. From existing literature, the validity of these ...

Atmospheric pressure organometallic vapor phase epitaxy is used for the growth of GaInP-AlGaInP lattice matched to GaAs substrate. The investigation of the GaInP/GaAs heterostructure has been carried out and mobility as high as 75 000 cm2 V-1s-1 for a sheet carrier concentration of 7.5 1011 cm-2 has been measured by Shubnikov-de Haas at 4 K. Red and yellow LED's have been obtained with emission wavelength of 670 nm and 576 nm respectively. Oxide stripe laser emitting at 660 nm in pulsed mode have been performed and present a threshold current density of 5 kA cm-2. Three ridge waveguide laser diode arrays with maximum output power of 108 mW have also been achieved.

A three ridge type GaInP/AlGaInP visible light emitting laser diode array grown by AP-OMVPE has been achieved. A pulsed maximum output power of 108 mW is obtained from this laser array without the use of facet coatings. The pulsed threshold current is 290 mA and the external differential efficiency is 0.75 W/A.<>