The first monolithic integration of a 1.55 /spl mu/m ridge waveguide DFB laser with an EA modulator using an identical active MOW-layer structure composed of two different QW types is reported. Minimum threshold currents of 17 mA, voltage swing <1.5 V for 10 dB extinction ratio and 2 Gbit/s modulation capability are obtained.

Minimum threshold current density of 0.57kA/cm2 and high T0 values up to 74K were obtained from 400mum long broad area lasers with MOVPE grown compressively strained all-quaternary GaInAsP SCH-MQW layer structures for 1.53mum emission wavelength. With 3mumx400mum RW laserdiodes (T0>90K) high-temperature CW operation up to 130-degrees-C was achieved.

We present results on high performance 1.55 µm InGaAs/InGaAsP multiple quantum well metal-clad ridge-waveguide distributed feedback lasers. The multilayer structure was grown entirely by low pressure metal-organic vapor phase epitaxy. For improved high speed modulation a small-area contact mask was used. As a result the following characteristics were obtained on the same device: 38 mW single-mode output power with a 3dB-bandwidth of 11 GHz and a linewidth of 3.5 MHz. Best values for the individual parameters are 71 mW, 11 GHz and 880 kHz.