From the perspective of African American women firefighters, the authors examine the social interactions that make them excluded ''outsiders within'' their firehouses and different from not only dominant white men but also other subordinated groups of Black men and white women firefighters. Drawing on extensive survey data from 24 Black women career firefighters nationwide and detailed interviews with 22 of these, the authors found persistent and pervasive patterns of subordination through the exclusion of Black women reflected in insufficient instruction, coworker hostility, silence, close supervision, lack of support and stereotyping. Perceived differences of Black women from white and Black men as well as white women created strained relations, especially when Black men and white women gained some acceptance by virtue of their gender and race, respectively, and thus reportedly distanced themselves from Black women. The experiences of African American women firefighters highlight the omnirelevance and intertwining of race and gender.

MBE AlGaAs/GaAs heterostructures have been grown on semi-insulating GaAs wafers that received a standard pre-deposition wet chemical etch, while other wafers were subjected to ultraviolet-ozone radiation in addition to the standard pre clean. The ultraviolet-ozone radiation serves to reduce the concentration of carbon on the GaAs wafer surface. Enhancement and depletion mode field effect transistors were fabricated on these wafers. Device anomalies associated with the presence of deep levels were found for the standard cleaned wafers. We present device properties such as current-voltage characteristics, sidegating effects, photoresponse characteristics and output impedance measurements for both wafer preparations. Thermal activation energies for the deep acceptor level were determined from temperature and frequency dependent impedance measurements and conductance deep level transient spectroscopy. The occupation of this deep level for the standard cleaned wafers is explained in terms of the interfacial carbon concentration.

Sidegating characteristics of molecular-beam-epitaxially grown AlGaAs/GaAs heterostructure field-effect transistors were obtained from layer structures containing varied AlGaAs spacer layer thicknesses. It is demonstrated that the sidegating effects for these wafers can be related to the leakage currents measured at the sidegate electrodes. The leakage currents were determined primarily to be a function of the resistance created by the isolation implants between the sidegate electrode and the device. Additionally, the various AlGaAs spacer layer thicknesses permitted the influence of silicon diffusion on device properties to be observed. The experimental results are compared with theoretical calculations.

Device characteristics of AlGaAs/GaAs heterostructure field effect transistors fabricated by molecular-beam epitaxial growth are related to the condition of the substrate-epitaxial layer interface. The presence of carbon on the GaAs wafer surface prior to growth has been found to produce a p-type, conducting interfacial region. We demonstrate that the concentration of carbon on the wafer surface can be significantly reduced by exposing the wafers to ultraviolet radiation. Depletion- and enhancement-mode device transfer characteristics and transconductance curves have been obtained on heterostructure wafers that were subjected to an ultraviolet-ozone surface preparation. A comparison of these results with the device properties of wafers receiving a standard cleaning procedure is presented. A model describing the interaction between the interfacial p-type region and the two-dimensional electron gas channel is also included.

This article explores the influence that the proportion of women in a department has on hiring decisions in the field of psychology. A sample of advertisers from the APA Monitor was asked to identify the gender of the candidate hired. Hiring patterns were the same for men and women hirers in nonacademic organizations, as each favored male candidates. In academic hiring, women candidates were favored in departments with moderate female representation. This finding counters claims that women are hired by departments with few women in response to affirmative action. Rather, the presence of moderate numbers of women influences hiring decisions that promote women's opportunities.