We present differential sputter yield measurements of boron nitride due to bombardment by xenon ions. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (< 100 eV). A quartz crystal microbalance is used to measure differential sputter yield profiles of condensable components from which total sputter yields can also be determined. We report total and differential sputter yields of three grades of boron nitride due to bombardment by xenon ions for ion energies in the range 60-500 eV and ion incidence angles of 0 degrees, 15 degrees, 30 degrees and 45 degrees from the normal. Comparisons with published values are made where possible.

We present a quartz crystal microbalance-based system for high sensitivity differential sputter yield measurements of different target materials due to ion bombardment. The differential sputter yields can be integrated to find total yields. Possible ion beam conditions include ion energies in the range of 30-350 eV and incidence angles of 0 degrees-70 degrees from normal. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (<100 eV) and a two-grid ion optics is used for higher energies (up to 750 eV). A complementary weight loss approach is also used to measure total sputter yields. Validation experiments are presented that confirm high sensitivity and accuracy of sputter yield measurements.

: We describe the development of an experimental apparatus geared towards measurement of boron nitride sputtering by low energy ions. A four-grid system is used to achieve a collimated beam at low energy (<100 eV). A weight loss approach is used to measure total sputter yields and a quartz crystal microbalance (QCM) is used to measure differential sputter yield profiles of condensable components. Integration of the QCM profiles also gives total sputter yields of condensable components. We report initial results of total and differential sputter yield measurements of three grades of boron nitride due to bombardment by xenon ions with ion energies in the range of 60-250 eV and at ion incidence angles of 0, 15, and 45 degrees from normal. Comparison with past measurement results are made where possible.