The negative-AND (NAND) gate is universal for classical computation making it an important target for development. A seminal quantum computing algorithm by Farhi, Goldstone and Gutmann has demonstrated its realization by means of quantum scattering yielding a quantum algorithm that evaluates the output faster than any classical algorithm. Here, we derive the NAND outputs analytically from scattering theory using a tight-binding (TB) model and show the restrictions on the TB parameters in order to still maintain the NAND gate function. We map the quantum NAND tree onto a conjugated molecular system, and compare the NAND output with non-equilibrium Green’s function transport calculations using density functional theory and TB Hamiltonians for the electronic structure. Further, we extend our molecular platform to show other classical gates that can be realized for quantum computing by scattering on graphs.

The negative-AND (NAND) gate is universal for classical computation making it an important target for development. Aseminal quantum computing algorithm by Farhi, Goldstone and Gutmann has demonstrated its realization by means of quantum scattering yielding a quantum algorithm that evaluates the output faster than any classical algorithm. Here, we derive the NAND outputs analytically from scattering theory using a tight-binding (TB) model and show the restrictions on the TB parameters in order to still maintain the NAND gate function. We map the quantum NAND tree onto a conjugated molecular system, and compare the NAND output with non-equilibrium Green's function transport calculations using density functional theory and TB Hamiltonians for the electronic structure. Further, we extend our molecular platform to show other classical gates that can be realized for quantum computing by scattering on graphs.

Although chemical space is vast, there are many instances where chemical modifications make only insignificant changes in the current that passes through a molecule. This insensitivity comes, in part, from the energy mismatch between the molecular resonances and the Fermi level of the electrodes used. Here, we present a strategy to overcome this problem by employing two-dimensional transition-metal dichalcogenides as electrodes. The work function of the electrodes can be tuned across the entire molecular energy range (from the highest occupied molecular orbital to the lowest unoccupied molecular orbital) at a low bias with the appropriate choice of electrode material. We illustrate the effectiveness of this strategy by investigating the thermoelectric properties of the junctions with a model molecular system, as optimal thermoelectric performance requires a delicate balance between the electronic and the heat transport properties. By using van der Waals contacts between the binding groups and the electrodes, similar to the binding groups used in graphene junctions, we find that we can effectively suppress the phonon contribution to the heat transport while achieving high levels of electron transport and thermopower as the molecular level is tuned into near resonance.

Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

Using ab initio calculations we investigate the energy level alignment at the graphene/MoS2 heterostructure and the use of electron doping as a strategy to lower the Schottky barrier and achieve a low-resistance Ohmic contact. For the neutral heterostructure, density functional theory (DFT) with a generalized gradient approximation predicts a Schottky barrier height of 0.18 eV, whereas the G(0)W(0) method increases this value to 0.60 eV. While the DFT band gap of MoS2 does not change when the heterostructure is formed, the G(0)W(0) gap is reduced by 0.30 eV as a result of the enhanced screening by the graphene layer. In contrast to the case of metal substrates, where the band alignment is governed by Pauli repulsion-induced interface dipoles, the graphene/MoS2 heterostructure shows only a negligible interface dipole. As a consequence, the band alignment at the neutral heterostructure is not changed when the two layers are brought into contact. We systematically follow the band alignment as a function of doping concentration and find that the Fermi level of the graphene crosses the MoS2 conduction band at a doping concentration of around 10(12) cm(-2). The variation of the energy levels with doping concentration is shown to be mainly governed by the electrostatic potential resulting from the doping charge.

The structure of an electrochemical interface is not determined by any external electrostatic field, but rather by external chemical potentials. This paper demonstrates that the electric double layer should be understood fundamentally as an internal electric field set up by the atomic structure to satisfy the thermodynamic constraints imposed by the environment. This is captured by the generalized computational hydrogen electrode model, which enables us to make efficient first-principles calculations of atomic scale properties of the electrochemical interface.

Single molecule devices are of great interest for what they reveal about fundamental aspects of electron transport and metal-molecule interactions. They represent the ultimate level of miniaturization in molecular electronics and are also of potential interest in sensor applications. We have used an electrochemical approach to realize a single molecule transistor based on 4,4′-bipyridine contacted by Ni. The top and bottom Ni contacts are an insulated Ni STM tip and an electrodeposited Ni film respectively, which are maintained free of oxide by being held in an aqueous electrolyte under potential control. The 4,4′-bipyridine molecules are initially present in the electrolyte and contacted using the STM break junction method. From numerous repeated experiments we build up a histogram of the measured conductance. This conductance depends strongly on the potential of tip and substrate relative to the reference electrode. This is a manifestation of electrostatic gating and shows that the device functions as a transistor. Remarkably, it shows a significantly higher gain than a similar transistor with Au electrodes. Calculations show that the current in the Ni-4,4′-bipyridine-Ni transistor is highly spin-polarized and therefore the device represents a true spin-based single molecule transistor.

The formation and oxidation of the main discharge product in nonaqueous secondary Li-O-2 batteries, that is, Li2O2, has been studied intensively, but less attention has been given to the formation of cathode electrolyte interfaces, which can significantly influence the performance of the Li-O-2 battery. Here we apply density functional theory with the Hubbard U correction (DFT+U) and nonequilibrium Green's function (NEGF) methods to investigate the role of Li2O2@Li2CO3 interface layers on the ionic and electronic transport properties at the oxygen electrode. We show that, for example, lithium vacancies accumulate at the peroxide part of the interface during charge, reducing the coherent electron transport by two to three orders of magnitude compared with pristine Li2O2. During discharge, Li2O2@Li2CO3 interfaces may, however, provide an alternative in-plane channel for fast electron polaron hopping that could improve the electronic conductivity and ultimately increase the practical capacity in nonaqueous Li-O-2 batteries.

When an electron tunnels between two metal contacts it temporarily induces an image charge (IC) in the electrodes which acts back on the tunneling electron. It is usually assumed that the IC forms instantaneously such that a static model for the image potential applies. Here we investigate how the finite IC formation time affects charge transport through a molecule suspended between two electrodes. For a single-level model, an analytical treatment shows that the conductance is suppressed by a factor ${Z}^{2}$, where $Z$ is the quasiparticle renormalization factor, compared to the static IC approximation. We show that $Z$ can be expressed either in terms of the plasma frequency of the electrode or as the overlap between electrode wave functions corresponding to an empty and filled level, respectively. First-principles GW calculations for benzene-diamine connected to gold electrodes show that the dynamical corrections can reduce the conductance by more than a factor of two when compared to static GW or density functional theory where the molecular energy levels have been shifted to match the exact quasiparticle levels.

Using a scanning tunnelling microscope break-junction technique, we produce 4,4'-bipyridine (44BP) single-molecule junctions with Ni and Au contacts. Electrochemical control is used to prevent Ni oxidation and to modulate the conductance of the devices via nonredox gating--the first time this has been shown using non-Au contacts. Remarkably the conductance and gain of the resulting Ni-44BP-Ni electrochemical transistors is significantly higher than analogous Au-based devices. Ab-initio calculations reveal that this behavior arises because charge transport is mediated by spin-polarized Ni d-electrons, which hybridize strongly with molecular orbitals to form a "spinterface". Our results highlight the important role of the contact material for single-molecule devices and show that it can be varied to provide control of charge and spin transport.

We investigate the electronic conductance and thermopower of a single-molecule junction consisting of bis-(4-aminophenyl) acetylene (B4APA) connected to gold electrodes. We use nonequilibrium Green's function methods in combination with density-functional theory (DFT) and the many-body GW approximation. To simulate recent break junction experiments, we calculate the transport properties of the junction as it is pulled apart. For all junction configurations, DFT with a standard semilocal functional overestimates the conductance by almost an order of magnitude, while the thermopower is underestimated by up to a factor of 3, except for the most highly stretched junction configurations. In contrast, the GW results for both conductance and thermopower are in excellent agreement with experiments for a wide range of electrode separations. We show that the GW self-energy not only renormalizes the molecular energy levels but also the coupling strength. The latter is a consequence of the finite response time associated with the electronic screening in the metal electrodes.

Thermopower measurements of molecular junctions have recently gained interest as a characterization technique that supplements the more traditional conductance measurements. Here we investigate the electronic conductance and thermopower of benzenediamine (BDA) and benzenedicarbonitrile (BDCN) connected to gold electrodes using first-principles calculations. We find excellent agreement with experiments for both molecules when exchange-correlation effects are described by the many-body GW approximation. In contrast, results from standard density functional theory (DFT) deviate from experiments by up to two orders of magnitude. The failure of DFT is particularly pronounced for the n-type BDCN junction due to the severe underestimation of the lowest unoccupied molecular orbital (LUMO). The quality of the DFT results can be improved by correcting the molecular energy levels for self-interaction errors and image charge effects. Finally, we show that the conductance and thermopower of the considered junctions are relatively insensitive to the metal-molecule bonding geometry. Our results demonstrate that electronic and thermoelectric properties of molecular junctions can be predicted from first-principles calculations when exchange-correlation effects are taken properly into account.

We study the effect of functional groups (CH3*4, OCH3, CH3, Cl, CN, F*4) on the electronic transport properties of 1,4-benzenediamine molecular junctions using the non-equilibrium Green function method. Exchange and correlation effects are included at various levels of theory, namely density functional theory (DFT), energy level-corrected DFT (DFT+Σ), Hartree-Fock and the many-body GW approximation. All methods reproduce the expected trends for the energy of the frontier orbitals according to the electron donating or withdrawing character of the substituent group. However, only the GW method predicts the correct ordering of the conductance amongst the molecules. The absolute GW (DFT) conductance is within a factor of two (three) of the experimental values. Correcting the DFT orbital energies by a simple physically motivated scissors operator, Σ, can bring the DFT conductances close to experiments, but does not improve on the relative ordering. We ascribe this to a too strong pinning of the molecular energy levels to the metal Fermi level by DFT which suppresses the variation in orbital energy with functional group.

When an electron tunnels between two metal contacts it temporarily induces an image charge (IC) in the electrodes which acts back on the tunneling electron. It is usually assumed that the IC forms instantaneously such that a static model for the image potential applies. Here we investigate how the finite IC formation time affects charge transport through a molecule suspended between two electrodes. For a single level model, an analytical treatment shows that the conductance is suppressed by a factor $Z^2$ (compared to the static IC approximation) where $Z$ is the quasiparticle renormalization factor. We show that $Z$ can be expressed either in terms of the plasma frequency of the electrode or as the overlap between the ground states of the electrode with and without an electron on the molecule. First-principles GW calculations for benzene-diamine connected to gold electrodes show that the dynamical corrections can reduce the conductance by more than a factor of two.