A rotary-type atomic layer deposition (ALD) system is demonstrated that can coat alumina thin films on three-dimensional (3D) substrates with a variety of microparticle shapes. An advanced ALD technology with a stop valve mode (SVM) is used, and high uniformity and conformability of alumina thin film deposition is confirmed. The controllability of alumina nano-thin film deposition on 3D substrates with relatively high specific surface area exceeds standard ALD. The optimal process, stop valve time of 20.0 s, trimethylaluminum pulse time of 0.2 s, water vapor pulse time of 0.3 s, and temperature of 150 ℃, shows the average growth per cycle as 1.342 Å/cycle and the refractive index as 1.640. The new technology is demonstrated by coating an alumina nanofilm using a rotary-type ALD machine on an silicon alloy powder and applying it to secondary battery anode materials. To prove the effectiveness of the advanced ALD process, the deposited materials are compared with silicon alloy powder-based anode materials manufactured by coating an alumina thin film with a normal ALD process. The anode materials, alumina coated silicon alloy powder, produced with the advanced ALD system possess a higher alumina composition, which thereby increase the retention rate of the secondary battery.

A novel rotary-type atomic layer deposition (ALD) process for coating platinum thin film on three-dimensional (3D) substrates is demonstrated. High uniformity and conformability of the platinum thin-film deposition on 3D substrates were confirmed, ensuring the controllability of the new ALD technique. The results for this technique surpassed those of the conventional wet method and ordinary atomic layer deposition, which both have a limited specific surface area. To demonstrate the application of this new technology, Pt nano-film coated γ-Al 2 O 3 was produced using the rotary-type ALD and applied to diesel oxidation catalysts (DOCs). The produced DOCs showed high Pt content when the number of ALD cycles was increased, and thereby exhibited more complete combustion of gaseous pollutants, such as CO, C 3 H 8 , and NO, even at lower temperatures. Pt nano-film deposition by the rotary-type ALD process was first optimised on Si wafer substrates. The process was controlled by four parameters: processing temperature, number of ALD cycles, precursor pulse time, and reactant pulse time. Deposition of the Pt nano-film was mainly determined by the processing temperature and the number of ALD cycles. The average growth per cycle and density of the Pt nano-film were found to be 0.8 Å/cycle and 21.0 g/cm 3 , respectively. The same procedure and conditions were applied to 3D γ-Al 2 O 3 powder substrates for DOCs, which demonstrated greater conversion performance compared with conventional Pt-used DOCs.