To cool a high mobility two-dimensional electron gas (2DEG) at a GaAs–AlGaAs heterojunction to milliKelvin temperatures, we have fabricated low resistance Ohmic contacts based on alloys of Au, Ni, and Ge. The Ohmic contacts have a typical contact resistance of RC≈0.8 Ω at 4.2 K, which drops to 0.2 Ω below 0.9 K. Scanning electron microscope images establish that the contacts have the same inhomogeneous microstructure that has been observed in previous studies. Measurements of the contact resistance RC, the four-terminal resistance along the top of a single contact, and the vertical resistance RV all show that there is a superconductor in the Ohmic contact, which can be turned completely normal with a magnetic field of 0.15 T. We briefly discuss how this superconductivity may be affecting the electrical transport measurements of 2DEGs, especially how it may hinder the cooling of electrons in a 2DEG below 0.1 K.

We present observations of an anisotropic resistance state at Landau-level filling factor nu = 5/2 in a two-dimensional hole system (2DHS), which occurs for certain values of hole density p and average out-of-plane electric field E-perpendicular to. The 2DHS is induced by electric-field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of p and E-perpendicular to, and hence the symmetry of the confining potential. For p approximate to 2 x 10(11 )cm(-2) and E-perpendicular to approximate to -2 x 10(5) V/m, the magnetoresistance along < 01 (1 >) over bar greatly exceeds that along < 011 >, suggesting the formation of a quantum Hall nematic or "stripe" phase. Reversing the sign of E-perpendicular to rotates the stripes by 90 degrees. We suggest this behavior may arise from the mixing of the hole Landau levels and a combination of the Rashba and Dresselhaus spin-orbit coupling effects.

This work was funded by EPSRC EP/H017720/1 and EP/J003417/1 and European Union Grant INDEX 289968. A.F.C. acknowledges funding from Trinity College, Cambridge, and D.T. from St. Catherine's College, Cambridge. I.F. acknowledges funding from Toshiba Research Europe Limited.

We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration, we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices, we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resistivity) is observed at liquid helium temperatures, but no definite signs of exciton condensation are seen in this case. Self-consistent calculations of the electron and hole wavefunctions show this might be because the average interlayer separation is larger in the e-h case than the h-h case.

As the ambition behind THz quantum cascade laser based applications continues to grow, abandoning free-space optics in favor of waveguided systems promises major improvements in targeted, easy to align, and robust radiation delivery. This is especially true in cryogenic environments, where illumination is traditionally challenging. Although the field of THz waveguides is rapidly developing, most designs have limitations in terms of mechanical stability at low temperatures, and are costly and complicated to fabricate to lengths > 1 m. In this work, we investigate readily available cylindrical metal waveguides which are suitable for effective power delivery in cryogenic environments, and explore the optimal dimensions and materials available. The materials chosen were extruded un-annealed and annealed copper, as well as stainless steel, with bore diameters of 1.75, 2.5, and 4.6 mm. Measurements were performed at three different frequencies, 2.0, 2.85 and 3.2 THz, with optimal transmission losses <3 dB/m demonstrated at 2.0 THz. Additionally, novel optical couplers are also presented and characterised, with the ability to change the beam path by 90° with a coupling loss of just 2.2 dB whilst maintaining mode quality, or thermally isolate sections of waveguide with a coupling loss as low as 0.5 dB. The work presented here builds on previous work1, and forms a comprehensive investigation of cryogenically compatible THz waveguides and optical couplers, paving the way for a new generation of systems to utilize THz QCLs for a host of low-temperature investigations.

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. Coulomb drag resistivity is a direct measure of the strength of interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter rs up to 14). Our ambipolar device design allows a comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions and also shows the effects of the different effective masses of electrons and holes in GaAs.

We report the development of a simple and reliable, front-sided-only fabrication technique for n-type ohmic contacts to two-dimensional electron gases (2DEGs) in undoped GaAs/AlGaAs quantum wells. We have adapted the well-established recessed ohmic contacts/insulated metal gate technique for inducing a 2DEG in an undoped triangular well to also work reliably for undoped square quantum wells. Our adaptation involves a change in the procedure for etching the ohmic contact pits to optimise the etch side-wall profile and depth. As an application of our technique, we present a front-side-gated ambipolar field effect transistor (FET), where both 2D electron and hole gases can be induced in the same quantum well. We present results of low-temperature (0.3 K - 4 K) transport measurements of this device, including assessment of the n-type ohmic contact quality. On the basis of our findings, we discuss why the fabrication of these contacts is difficult and how our technique circumvents the challenges.

We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond time scales, we can measure directly the electron arrival-time distribution and we determine the upper bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage wave form that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.

Recently, it has been possible to design independently contacted electron-hole bilayers (EHBLs) with carrier densities <5×1010 cm2 in each layer and a separation of 10–20 nm in a GaAs/AlGaAs system. In these EHBLs, the interlayer interaction can be stronger than the intralayer interactions. Theoretical works have indicated the possibility of a very rich phase diagram in EHBLs consisting of excitonic superfluid phases, charge density waves, and Wigner crystals. Experiments have revealed that the Coulomb drag on the hole layer shows strong nonmonotonic deviations from a ∼𝑇2 behaviour expected for Fermi-liquids at low temperatures. Simultaneously, an unexpected insulating behaviour in the single-layer resistances (at a highly “metallic” regime with 𝑘𝐹𝑙>500) also appears in both layers despite electron mobilities of above ∼106cm2V−1s−1 and hole mobilities over ∼105cm2V−1s−1. Experimental data also indicates that the point of equal densities (𝑛=𝑝) is not special.

We report on the development of backgated independently contacted two-dimensional electron–hole bilayer devices suitable for carrying out transport measurements at low temperatures. A method for creating patterned backgates using conventional photolithography and a single-sided aligner is outlined along with the use of a conventional digital camera and commercially available infrared LEDs for checking the backside lithography at stages during this process.