Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent g-tensors. While this characteristic of the g-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these g-tensors necessitates the need to understand their sensitivity to the confinement potential that defines the quantum dots. Here, we demonstrate a S − T_ qubit whose frequency is a strong function of the voltage applied to the barrier gate shared by the quantum dots. We find a g-factor that can be approximately increased by an order of magnitude adjusting the barrier gate voltage only by 12 mV. We show how this strong dependence could potentially be attributed to the dots moving through a variable strain environment in our device. This work not only reinforces previous findings that site-dependent g-tensors in germanium can be utilized for qubit manipulation, but reveals the sensitivity and tunability these g-tensors have to the electrostatic confinement of the quantum dot.

The silicon metal-oxide-semiconductor quantum dot architecture is a leading approach for the physical implementation of semiconductor quantum computing. One major challenge for scalable quantum dots is the presence of charge impurities. Electron-beam lithography (EBL), almost universally used to fabricate quantum dot devices, is known to create such defects at the Si/SiO2 interface. To eliminate the need for EBL, we have transferred the metal gate pattern of a quantum dot onto the silicon substrate using nano-imprint lithography. Critical features with 50 nm scale and separation can be dependably reproduced. By characterizing the bias-dependent charge transport through a quantum point contact barrier, the prevalence of impurities is found to be largely diminished in nano-imprinted devices when compared to similar electron-beam-written counterparts. High-quality charge transport and charge sensing of several quantum dots are obtained. Additionally, gate noise is measured with an average of 1.5 μeV Hz-1/2 equivalent to previous measurements made on devices fabricated with EBL, which suggests that the leading source of impurities produced by EBL are deep, fixed charges. This work offers a path toward reliable quantum dot operation in MOS by improving fabrication techniques to reduce charge impurities.

Quantum dots in silicon are a promising architecture for semiconductor quantum computing due to a high degree of electric control and compatibility with existing silicon fabrication processes. Although electron charge and spin are prominent methods for encoding the qubit state, valley states in silicon can also store quantum information via valley-orbit coupling with protection against charge noise. By observing coherent oscillations between valley states in a Si/SiGe double quantum dot device tuned to the two-electron charge configuration, we measure the valley energy splitting in both quantum dots individually. We further demonstrate two-axis quantum control of the valley qubit using gated pulse sequences with X and Z rotations occurring within a fast operation time of 300 ps. This control is used to completely map out the surface of the Bloch sphere in a single phase-space plot that is subsequently used for state and process tomography.

In an externally driven multilevel quantum system observation that the NEXT jump has not yet happened affects its future development. In previous work [Phys. Rev. A36, 929 (1987)] it was shown that this class of measurement makes it possible to observe remarkably long dark intervals -- or intermittency -- in the atomic fluorescence of an atom with 3 or more levels. Those calculations were carried out when the driven oscillations or Rabi flopping between the ground state and a strongly fluorescing state were fast compared to its lifetime. In systems with solid state Qubits the accessible parameter space is generally limited to the regime where oscillations are slower than the lifetime. In this paper we evaluate intermittency in atomic transitions, due to measurements with a null result, in this limit. During the dark periods the wave function of the continuously measured multilevel system is coherent.