Electrorotation(ROT) is a wide-used biochip technique to measure the dielectric properties of cells,but its automatic measurement and accuracy of the data is not enough yet.Based on Schwarz-Christoffel Mapping(SCM) method,a fast analytical algorithm in electric field analysis of electrorotation chip is presented.Using this method,the best area is precisely defined,in which the measurement error is small enough.Compared with the conventional finite element method,this algorithm has higher accuracy and uses less computing time and space.So it can be used for real-time correction of electrorotation measurement data.Finally,the results calculated with this algorithm are validated by comparison with the finite element method.The comparison of the results is satisfactory.

To improve the power conversion efficiency(PCE) of laser diode, theoretically analyzed and calculated are the influences of four different doping profiles in p-waveguide layer on the internal loss, series resistance, threshold current and PCE of a laser diode with asymmetric waveguide. The doping profile and thickness of p-waveguide layer were optimized. According to the calculation and optimization results, the linear doping profile was adopted in p-waveguide layer and the optimal thickness of p-waveguide layer was 0. 45 μm. The fabricated 980nm laser diode with 1 200 mm cavity length has a threshold current of 324 mA, internal loss of 1.62 cm~(-1) and series resistance of 136 mΩ. When the current is 1.98 A, the slope efficiency and output power of the laser are 1.05 W/A and 1.74 W respectively, and the corresponding electro-optical conversion efficiency is improved to 58.4% from 54.6% for the original structure.

Performance, lifetest data, as well as failure modes from two different device structures will be discussed in this paper, with emitting wavelengths from 780nm to 800nm. The first structure, designed for high temperature operation, has demonstrated good reliability on various packages with output power up to 10W from a 200μm emitting area. The device structure can be operated up to 60°C heatsink temperatures under CW conditions. Then a high efficiency structure is shown with further improvement on operation power and reliability, for room temperature operation. With ongoing lifetest at 12A and 50°C heatsink temperature, <1000 FIT has been achieved for 6.5W and 33°C operation, on both designs. MTT10%F at 10W and 25°C operation is estimated to be more than 20,000 hours. Devices retain more than 20W rollover power under CW conditions, when re-tested after several thousand hours of accelerated lifetest. Paths for reliability improvement will also be discussed based on observed lifetest failure modes from these two structures.

The paper describes a general method for analysis of time courses of transmembrane voltage induced by time-varying electric fields. Using this method, a response to time-varying fields can be studied. We apply it to different field shapes used for electroporation: rectangular pulses and trains pulses. Using the described method, the course of induced transmembrane voltage is investigated for each selected pulse shape. All the studies are performed at different pulse durations, For all the pulse shapes investigated, this slows down the process of transmembrane voltage inducement. Thus, longer pulses have to be used to attain the desired voltage amplitude, as the influence of the fast, shortlived phenomena on the induced voltage is diminished.

Analog front-end circuits and systems is becoming increasingly important as technology continues to wideband. In this paper, based on the two-port equivalent noise models, a modularized method is developed to fast and accurate noise analysis and design of preamplifier, which is the most critical building block in the front-end circuits. A fundamental noise model is E-n - I-n model. Using the E-n - I-n model data, all noise performance indexes can be predicted easily. Moreover, the correlation coefficient between E-n and I-n is assumed to be a complex here, not a real in the conventional, for the accurate estimation of optimum source impedance. In addition, the matching networks and noise canceling technique for wideband application are overviewed and summarized here. Finally, the illustrative experiments verify that the proposed technique has a significant potential use for high sensitivity receivers.

This paper presents a method to control and acquire the conductivity signal of low-voltage capillary electrophoresis microchip based on SOPC and DDS techniques. The soft-core processor with RISC framework, NIOS II, acts as the core component. Under the control of NIOS II, the electrode ports are movably supplied DC voltage by the 128-channel electrodes address decoding strobe controller, and the moving field is formed to achieve of the different particles separating in the microchannel of low-voltage electrophoresis microchip. The direct digital frequency synthesis (DDS) modeling is built by DSP Builder. The DDS IP core is generated by Quartus II software. To control the dual phase lock-in amplifier by the DDS orthogonal signals sources. The four-electrode capacitively coupled contactless conductivity detector is designed to achieve the conductivity detection of solution. The design of DDS IP core based on DSP Builder, hardware framework and software design of system are mainly introduced in article.

Background Recently, it has been proposed that the autoantibodies against various cardiovascular receptors play a role in the pathogenesis of primary hypertension. In this study, we aimed to identify whether or not there are autoantibodies against cardiovascular L-type Ca(2+) channels in patients with primary hypertension.Methods A peptide corresponding to the sequence 2-16 of the alpha 1c-subunit of L-type Ca(2+) channel was used as an antigen to screen the autoantibodies from 90 patients with primary hypertension and 45 healthy controls by an enzyme-linked immunosorbent assay (ELISA). The clinical data of 90 hypertensive patients were compared between patients with and without these autoantibodies.Results Serum from 3 (6.7%) of the 45 healthy controls, 33 (36.7%) of 90 hypertensives showed positive responses in ELISA (P < 0.01). The prevalence of such autoantibodies in two subgroups of hypertensives with coronary heart disease (9/21, 57.14%, P < 0.05) and left ventricular diastolic dysfunction (28/63, 44.4%, P < 0.05) was higher than in those without the corresponding complications. And the patients with such autoantibodies had lower E/A than patients without such autoantibodies (0.803 +/- 0.191 vs 1.004 +/- 0.322, P=0.002).Conclusion There are autoantibodies against vascular L-type Ca(2+) channels in patients with primary hypertension.

This paper presents a control and acquisition platform design method of travelling wave dielectrophoresis microchip based on SOPC technique. The direct digital frequency synthesis (DDS) modeling is built by using the digital signal processing (DSP) development tool of FPGA, DSP Builder. By the controlling of NIOSII, which embedded in the FPGA (CyclonII EP2C35) of Altera corp., the four-phase DDS module outputs four channels AC signals with the same magnitude, and their phase of four channels AC signals are 0deg, 90deg, 180deg and 270deg, respectively. They supply control signals for the travelling wave ITO electrodes array. The travelling wave dielectrophoresis electric field is created by the four-channel AC signals, it drives biological particles direction moving to achieve different biological particles separating in the microchannel of dielectrophoresis micochip. Adopting the custom I2C module achieves the configuration of 3-Megapixel CMOS image sensor, MT9T001, which achieves the contactless detection of different biological particles. The design of DDS IP core based on DSP Builder, the design of custom I2C module, the hardware framework and software design of control system is mainly introduced in article. The correctness and practicability of design method is testified by simulation results.

The high power semiconductor lasers is the core part of optic-electric practical devices nowadays.In recent years,considerable progress has been made in the high power semiconductor lasers in China and abroad.Moreover,the investigations and applications of the high power semiconductor laser array become the most attractive highlight in the field,and the main optic-electric performances,such as super-high electro-optical conversion efficiency,high brightness and high reliability,are realized tremendous breakthrough.The main studies and key technologies of the high power semiconductor lasers in China were summarized.Strained quantum well,Al-free active region broad waveguide structure and asymmetrical waveguide structure were widely adopted in epitaxial wafer structure to increase the COD power density and device properties.This paper was also including optical coating,packaging,device reliability,beam shaping and coupling and device applications.

Shifting of the optical mode from symmetric distribution to asymmetric distribution by separate confinement asymmetric waveguide structure reduces optical absorption loss by carriers,and permits higher doping of the p side to reduce resistance.Based on the theoretical analysis for the optical field distribution characteristics of GaAsP/GaInP tensile-strained single quantum well(SQW) lasers with asymmetric waveguide,the thickness of waveguide layers was optimized,and a high-power semiconductor laser with Al-free active region was fabricated and studied experimentally.For a 900 μm cavity length device,the typical threshold current density is 400 A/cm2,and a low internal loss around 1.0 cm-1 is achieved.Under continuous wave(CW) operation condition,150 μm aperture devices achieve a CW output power of 6 W,the maximum slope efficiency of the prepared devices is 1.25 W/A,and the lasing wavelength is 807.5 nm.Horizontal and vertical far-field divergence angles are 3.0° and 34.8°,respectively.The characteristic temperature of the laser in the range of 20～70 ℃ is estimated to be about 133 K.Separate confinement asymmetric waveguide structure is proven to be an impactful method for reducing optical loss and improving the characteristics of high power diode lasers.

Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths. Progress in material performance is reviewed and we show that current trends imply there is no fundamental barrier to achieving peak powers of 1-kW per 1-cm diode laser bar. For bars with such high peak powers, commercially available reliable devices would be expected to deliver ~ 300-W per bar. Progress to date has allowed us to demonstrate > 400-W peak output from single 1-cm diode laser bars at emission wavelengths from 800-nm to 980-nm. The available range of emission wavelengths has also been increased, with 90-W bars shown at 660-nm and 24W at 1900-nm, complementing the 100-W bar previously demonstrated at 1470-nm. Peak power is seen to correlate closely peak efficiency. Further advances in diode laser efficiency and low thermal resistance packaging technology continue to drive these powers higher. The most critical improvements have been the reduction in the diode laser operating voltage through optimization of hetero-barriers (leading to 73% efficient 100-W bars on copper micro-channel) and a reduction in packaging thermal resistance by optimizing micro-channel performance (leading to < 0.2-oC/W thermal resistance).

High power GaAs-based high power diode bars produce wavelengths in the range of 780 to 980 nm and are widely used for pumping a broad range of rare earth doped solid-state lasers. As the markets for these laser systems mature, diode lasers that operate at higher power levels, greater overall efficiency, and higher reliability are in high demand. In this paper we report efficiencies of over 70% in the 9xx-nm band, continuous wave power levels over 340 Watts in the 8xx-nm band, and reliability data at or above 100 Watts. We will also review the latest advances in performance and detail the basic physics and material science required to achieve these results.

By using the linear approximation method, the normalized intensity fluctuation was calculated in a gain-noise model of a single-mode laser driven by colored correlated noises, and the influences of the parameters of the noises and modulation signal normalized intensity fluctuation were studied. The results showed that the normalized intensity fluctuation was strongly dependent on self-correlation times of the pump and quantum noises and the ratio of them.

Using the linear approximation method, the output power spectrum of a gain-noise model is calculated in a single-mode laser driven by direct signal-modulated correlated colored pump and quantum noises. We detect that, not only resonance, but also suppression appear in the signal-to-noise ratio R versus the self-correlation time of pump noise tau(1) curve. However, when the frequency of input signal increases to a certain critical value Omega(0), both resonance and suppression disappear, i.e. the curve becomes monotonous. Moreover, the signal-to-noise ratio R versus attenuation coefficient gamma curve also exhibits resonance.

The signal-to-noise ratio (SNR) was presented by studying a signal modulated model of a single-mode laser system driven by pump noise and quantum noise with correlated real and imaginary parts. A maximum in the curve of the dependence of SNR upon the cross-correlation coefficient λq between the real part and the imaginary part was found i.e., stochastic resonance (SR) appearing in the SNR vs. λq curve. When the SNR was at the maximum, cross-correlation coefficient the λq=0. The intensities of the pump and quantum noise, the amplitude of the modulation signal, and the net gain of the laser were studied to find their influences on SR.

The influences of the two forms of modulated noises,i.e.the bias signal-modulated noise and the direct signalmodulated noise,on the normalized intensity fluctuation (NIF) are investigated,and the results of the two forms of modulation are compared in detail,We find that a minimum for the case of the bias signal modulation appears in the curve of the dependence of the NIF upon the quantum and pump noise intensities when the correlation coefficient between the quantum noise and the pump noise is negative.However,the NIF for the case of the direct signal modulation is independent of the correlation coefficient between the two noises.Moreover,at the same parameter region,the NIF for the bias signal modulation is only one-eighth as much as.that for the direct signal modulation.

Using the linear approximation method, the steady-state mean normalized intensity fluctuation is calculated after input signal in a single-mode laser system driven by pump noise and quantum noise with cross-correlation between the real and imaginary parts. The influences on the steady-state mean normalized intensity fluctuation are analyzed by quantum noise with cross-correlation coefficient between the real and imaginary parts, the intensities of the quantum and pump noise, the amplitude and frequency of input signal and the net gain. It is found that the statistic fluctuation of laser field is smaller in the case of the weaker quantum noise cross-correlation between the real and imaginary parts, smaller noises, far from threshold, smaller amplitude and higher frequency of the signal.

Multiplicatively introducing the noise and the signal into the gain-noise model of a single-mode laser system, we detect the two forms of stochastic resonance (the single-peak form stochastic resonance and stochastic multiresonance) in the curve of the dependence of signal-to-noise ratio upon the noise correlation time. Moreover, when the correlation coefficient and the intensities of both noises are changed, the two forms of stochastic resonance alternate.

This paper introduces a new data communication way. That is to realize data information modulation and demodulation in traditional CO2 laser sending and receiving process by installing a substance called photoelectric crystal. It stresses selection of photoelectric crystal and major design specifications of laser modulator and demodulator. Comparing with other ways, the one demonstrated in this paper makes it clear that as standard data communication interface whose transmission medium is CO2 laser, it owns greater value in application.