We propose a long-range action effect mechanism qualitatively explaining all the existing experimental data obtained for any kind of energy impact on a solid state. This mechanism is based on new conceptions of movement of atoms (defects) in condensed matter described in the molecular potential theory (MPT). In contrast to the molecular-kinetic theory (MKT), MPT does not require the formation of a certain kinetic energy fluctuation nearby the atom to overcome the potential barrier. However, it is necessary to somehow reduce the chemical bond energy, which corresponds to decrease in the potential barrier height. The decrease in the chemical bond energy nearby a given atom is due to the occurrence of antibonding quasiparticles (AQP) excited electrons and/or holes that can be created in different ways (by light, injection of charged particles, temperature, pressure, etc.). In any case, this facilitates the motion of atoms. All the long-range effects under the energy impact are associated with the movement of defects, initial and/or created by irradiation, due to AQP, which are always formed under different energy impact and facilitate the movement of atoms. © 2017 Bull. Georg. Natl. Acad. Sci.

In2Ge2O7, Ge3N4, In2O3 and germanium nanowires were synthesized by the developed hydrazine (N2H4)-based technology. Annealing of germanium or Ge+In sources in the vapor of N2H4+3 mol.% H2O caused the formation of volatile GeO and In2O molecules in the hot zone. These molecules were transferred to the Si substrate, which was placed in the could zone of a reactor. After interacting with hydrazine decomposition products (NH3, NH2, NH, H2, H) and water, Ge3N4 nanowires and nanobelts were produced on the Ge source in the temperature range of 500–520 ºC. The growth temperature of Ge3N4 nanowires in hydrazine vapor was by 350 ºC lower than the temperature reported in the literature. Using In+Ge source the tapered In2O3 nanowires were formed on the Si substrate at 400 ºC. At 420–440 ºC the mixture of In2O3 and Ge nanowires were synthesized, while at 450 ºC In2Ge2O7 nanowires were produced, with InN nanocrystals growing on their stems. The possible chemical reactions for the synthesis of these nanostructures were evaluated. The growth temperatures of both, In2Ge2O7 and InN nanostructures were by 50–150 ºC lower than that, reported in the literature. The results of this work clearly demonstrate the ability of hydrazine vapor to reduce the growth temperature of nitride and oxide nanomaterials.

The effect of hydrogen on the variation with temperature of internal friction (Q−I) and elastic modulus (E) of a number of Ti-based alloys has been studied in the Hz and kHz frequency ranges. A relaxation peak of internal friction with a high degree of relaxation (Q−Imax∼10−1) and with a ΔE effect is observed in all hydrogen-doped samples at T∼600K at ∼1kHz, and at T∼500K at ∼1Hz. Such a peak is not present in samples without hydrogen. The activation energy W and the frequency factor v0 of the observed relaxation are determined to be W∼1.55eV, v0∼1017s−1. It is shown that the observed effects are connected with the mechanism of grain boundary relaxation, as the introduction of hydrogen into titanium alloys leads to the formation of fine-grained structures.

The degree of recoverable strain, reactive stress and pseudoelasticity of some Ti-Ta-Zr alloys were investigated. The measurement technique involved differential calorimetry, estimation of friction and evaluation of recoverable torsion strain. The alloys were quenched from different temperatures of the beta-phase area and subjected to additional thermal and mechanical treatment required for subsequent examination. The degree of recoverable strain was measured on custom-made unit. The samples have been heated by electrical current and using a furnace. Initial deformation of the specimens was achieved by torsion. For all of the alloys the shape recoverywas not less than 90-98% for initial strain up to 7-9%. M-s and A(s) values for the alloys range in 298-433 K and 523-673 K interval. These allowed to conventionally consider the shape memory effect in these alloys as a "high temperature" (respectively to TiNi) phenomenon. The values of the reactive stress induced by reverse martensite transformation in the alloys was measured to be 300-550 MPa. After 3-4 cycles the pseudoelasticity of the alloys (strain-stress cycled at room temperature), for the initial strain - 3.5-4%, comes up to 100%.