The optical and photoluminescent properties of plasma polymer layers synthesized from hexamethyldisiloxane are examined. The value of the polymer layer transparence is in the limits from 55% at 400nm to 88% at 800nm. Photoluminescence is stimulated by using the spectral line λ=365nm emitted by a Hg spectral lamp.

In the present work, results are presented on the optical properties of composite layers of blue-luminescent ZnS.Cu in an epoxy oligomer The addition of small quantities of fullerenes, with concentrations in the range W(t) = 0.001 to 0 01] wt %, results in the emergence of a new wavelength region of increased electroluminescence This effect is probably due to the high activity of dimers and trimers of (C(60))(n) associates of microcrystalline ZnS at high dissolution rates.

Alternating current hybrid electroluminescent Al/SnO2/ZnS: Cu/ZnO/Al structures with blue emission have been prepared. In these ZnO films are used as protective layers. The optical properties of different RF magnetron sputtered ZnO films have been studied. The voltage - brightness characteristics of AC EL structures with a ZnO protective film and conventional structures with a TiO2 protective layer are compared. The investigation shows that the brightness of the structures with a ZnO protective film is higher. The improved characteristics of these new hybrid structures could be used in preparing various systems for representation of permanent or variable light information.

In the present work plasma polymer films obtained from hexamethyldisiloxane have been implanted by carbon ions at three different doses. The photoluminescent properties of the implanted polymers were investigated. The optical transmission of these polymer layers was investigated in the visible spectral region. Their electrical parameters were also measured. It was found that the resulting changes do not worsen the protective properties of the implanted polymer layer. The variations in the properties studied might be ascribed to the nanostructured carbon clusters formed on the polymer surface. The results obtained could form the basis for further optimization of the polymer structure by carbon ion implantation in view of applications in electroluminescent display structures.

Alternating current electroluminescent (AC EL) structures with yellow emission containing a second protective plasma polymer layer were investigated. An original hybrid technology and a plasma polymerization process were used for preparation of these structures.Plasma polymerization, used for preparation of the second protective layer of the AC EL structure, is a modern method for obtaining thin films, exhibiting many valuable practical properties: mechanical and thermal stability, chemical resistance, good adhesion to any substrate, etc. Moreover, by varying different plasma parameters of the plasma polymerization process, materials with different chemical compositions and different structures can be obtained. The monomer used was hexamethyldisiloxane. Thus, very stable thin protective polymer layers with thickness of about 0.5 mum were synthesized.The inclusion of a protective silicon containing polymer layer in the composition of the AC EL structure led to an improvement of the brightness and the stability, as well as of the lifetime with about 5000 h of operation. These AC EL structures can be used for displaying visible light information with various size, shape and configuration in different areas of style of living and industry. (C) 2004 Elsevier Ltd. All rights reserved.

The photoluminescent (PL) properties of two novel types of conjugated polymer layers were studied. The layers were deposited by a centrifugation method using a special vacuum setup. The PL spectra of the layers were detected at different wavelengths of excitation light. The results suggest that the investigated conjugated polymers can be used as electroluminescent display structures with different spectral emission.

Some emission properties of Alternating Current Electroluminescencent (AC EL) structures containing thin chalcogenide films of the systems As-S or Ge-Sb-S are investigated by means of optogalvanic effect. The optogalvanic characteristics of red emitting structures at different conditions of their excitation are presented. Conclusions about the behaviour of the emission are drawn and some possibilities of the proposed method for the examination of the AC EL structures are analysed.

An optogalvanic method based on the shift of the continuous spectrum frequency distribution is proposed. The accuracy of the shift indication depends on the frequency distribution of the absorbing transitions in the optogalvanic detector spectrum. The absorption in Ne/Cu hollow cathode discharge lamp is analysed in order to investigate the behaviour of the spectrum emitted by a red AC EL panel.

The influence of fullerene and carbon inclusions in the active layer of a.c. electroluminescent structures has been investigated. A considerable increase in brightness for samples with fullerene inclusions has been established. The mechanism of interaction between the fullerene molecules and the luminophor grains is considered.

The influence of rapid thermal annealing on SnO2 thin film characteristics is studied. The films are deposited on silicon substrates by a spray pyrolytic technique at various substrate temperatures for various deposition times. The as-deposited SnO2 thin films are further annealed in two ways: at 1000 °C in oxygen for times varying from 15 to 90 min as well as by rapid thermal annealing in a vacuum of 6.7 × 10−3 Pa for 1 min at the same annealing temperature. Changes in film characteristics after the thermal treatments are examined. Some features of the film surface morphology after the treatments are investigated. Information on the profiles of in-depth element concentration in the annealed SnO2 films Auger electron spectroscopy is given. Possible mechanisms explaining the experimental results are discussed.

The suitable layer-building solutions containing tin and phosphorus or tin and phosphorus plus fluorine compounds were prepared. Simple spray pyrolysis technique for obtaining thin SnO2:P or SnO2:P, F films on glass or quartz substrates is used. The effect of different parameters such as dopant concentration, substrate temperature and carrier gas flow-rate on film properties is presented. some physical, electrical and optical characteristics of the prepared thin SnO2:P and SnO2:P, F films is discussed.

The influence of an additional high-temperature treatment of SnO2 : F thin films prepared on silicon substrates is studied. The films are deposited by a spray pyrolytic technique at various substrate temperatures and deposition times. As-deposited SnO2 : F thin films are further annealed at temperature of 1000 degree(s)C in oxygen environment for times of 15 to 90 min as well as by rapid thermal annealing in vacuum of 6, 7 X 10-3 Pa for 1 min at the same annealing temperature. The changes of the film characteristics after the treatment are studied. Some peculiarities of the morphology film surface both on the deposition conditions and the various thermal treatment are investigated. Possible mechanisms explaining the obtained experimental results are discussed.

The changes in the colour characteristics of Alternating Current Hybrid Electroluminescent structures with yellow emission, as a function of the type of the protective layer, are investigated. Conclusions for the possible applications of some of the investigated HEL structures in various systems for representation of colour sign information are given.

The influence of doped antimony and fluorine ions on the prop- erties of SnO2 thin films were examined. The physical, electrical and optical characteristics of the films as a function of preparation conditions were inves- tigated. The absorption curves of SnO2: F, Sb films were taken down and the obtained values of the separate parameters discussed. Possibilities for applica- tion of these doped SnO2 films as transparent electrodes in electroluminescent and liquid crystal display structures were shown.