The electroluminescent characteristics of the InAs/InAs1-ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y>0.09) in the temperature range 4.2-300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1-4.2 μm at low temperatures (T<30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered. Keywords: heterojunctions, InAs, antimonides, electroluminescence, light-emitting diodes.

The electrical and luminescent characteristics of the heterostructure with a 20 nm-wide n-InAsSbP/n-InAs0.95Sb0.05/p-InAsSbP single quantum well, grown on an n-InAs substrate by the MOVPE method, have been studied. An intense room temperature electroluminescence (EL) with a maximum near the photon energy of 0.34 eV and a FWHM of 32 meV was discovered. It was established that the EL in such single quantum well has been emitted due to type I radiative transitions between the ground levels of electrons and holes both at forward and reverse bias. The characteristics of heterostructures with a single quantum well and the active region based on a bulk InAsSb layer of the same composition have been compared.

The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized states of InSb quantum dots, was recorded at low temperature.

The features of the electroluminescence spectra of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed into the p-n-InAs junction were studied. The luminescent properties of the heterostructures under a forward and reverse bias in the temperature range of 77–300 K were investigated as a function of the surface density of nano-objects buried in the narrow-gap matrix. When applying the reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized electron-hole states of the InSb quantum dots, was revealed and recorded at low temperatures.

Laser photooxidation is used to form a surface antimony layer on p-type GaSb and GaAs0.06Sb0.94. The emerged Sb/III-Sb interface is studied by a combination of the Raman and photoluminescence spectroscopy supported by Kelvin probe microscopy and atomic force microscopy. The laser power density controls the thickness and structure of the Sb layer. Laser photooxidation thickens the amorphous Sb layer that emerged after native oxide formation. The thickening decreases the bandgap photoluminescence intensity and increases surface band bending. Further increase in the laser power density forms a multilayered antimonene phase with a rhombohedral structure. The crystalline Sb layer decreases the surface band bending due to changes in the work function. For the crystalline layer, the PL intensity further decreases. The effective work function model explains the experimental results. Finally, the study shows that it is possible to modify surface optoelectronic properties with a submicrometer lateral resolution.

The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized states of InSb quantum dots, was recorded at low temperature. Keywords: quantum dots, electroluminescence, InAs, InSb, type II heterojunction.

The electroluminescent characteristics of the InAs/InAs1−ySby /InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y > 0.09) in the temperature range 4.2−300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1−4.2 μm at low temperatures (T < 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered.

The n+-InAs/n0-InAs1 – ySby/p-InAsSbP heterostructures with asymmetric band offsets at the heteroboundaries of the active region have been grown by vapor-phase epitaxy from organometallic compounds on InAs substrates. The forward branch of the current–voltage characteristics of the obtained heterostructures at low temperatures has segments with the tunneling conduction. The energy-band diagram of the double InAs/InAs1 – ySby/InAsSbP heterostructure is calculated in the range of compositions (y < 0.2) of the narrow-gap active region. The InAs1 – ySby/InAsSbP heterojunction is shown to be a II type heterojunction in this composition range. The electroluminescence observed in the experiment for the n+-InAs/n0-InAs1 ‒ ySby/p-InAsSbP heterostructures with the active region in compositions y > 0.14 is due to interface radiative transitions with participation of localized hole states at the II type heteroboundary.

A study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heterojunction is formed at the InAs1 – ySby/InAs0.41Sb0.28P0.40 heterointerface. It is shown that interfacial radiative transitions at the type-II heterointerface make a dominant contribution in the temperature range of 4.2–180 K. This enables minimization of the temperature dependence of the operating wavelength of a light-emitting diode.

Гетероструктуры n+-InAs/n0-InAs1-ySby/p-InAsSbP с асимметричными отсечками зон на гетерограницах активной области были выращены методом газофазной эпитаксии из металлоорганических соединений на подложках InAs. В прямой ветви вольтамперных характеристик полученных гетероструктур при низких температурах наблюдались участки с туннельной проводимостью. Проведен расчет зонной энергетической диаграммы двойной гетероструктуры InAs/InAs1-ySby/InAsSbP в диапазоне составов (y<0.2) узкозонной активной области. Было показано, что гетеропереход InAs1-ySby/InAsSbP является гетеропереходом II типа в данном диапазоне составов. Наблюдаемая в эксперименте электролюминесценция для гетероструктур n+-InAs/n0-InAs1-ySby/ p-InAsSbP с активной областью в интервале составов y>0.14 была обусловлена интерфейсными излучательными переходами с участием локализованных дырочных состояний на гетерогранице II типа. Ключевые слова: гетеропереходы, МОГФЭ, электролюминесценция, антимониды, InAs.

The peculiarity of planar quantum magnetotransport in the type II broken-gap p-GaInAsSb/p-InAs heterostructures at high magnetic fields has been investigated. The structure of the hybridized energy spectrum of a two-dimensional semimetal channel at a single type II broken-gap heterointerface was considered in dependence on the composition of the quaternary solid solution. A transition from a conducting state to a dielectric state (quantum insulator) for a 2D-semimetal channel at the heteroboundary was observed in quantizing magnetic fields under the condition of simultaneous filling of the first Landau levels for 2D-electron and interface hole states.

The results of a study of the electroluminescence of the asymmetric InAs/InAs1−ySby/InAsSbP LED heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y=0.15 and y=0.16 in the temperature range 4.2−300 K are presented. Based on the experimental data, the formation of a staggered type II heterojunction at the InAs1−ySby/InAsSbP heterointerface was determined. The dominant contribution of the interface radiative transitions at the type II heterointerface in the temperature range 4.2−180 K was shown, which makes it possible to minimize the temperature dependence of the operating wavelength of the LEDs.

The design and technology for the fabrication of an asymmetric stepped InAs/InAs 1 – y Sb y /InAsSbP heterostructure with an ultimate InSb content (up to y = 0.17) in the narrow-gap active region by vapor-phase epitaxy from metal-organic compounds are developed. The electroluminescence characteristics of long-wavelength LEDs based on the proposed heterostructure, which emits in the spectral range of 4.6–5.3 μm, are studied. A linear decrease in the quantum efficiency of the electroluminescence with increasing InSb content in the active layer of the LEDs obtained is revealed. The advantage of using the asymmetric heterostructure for fabricating LEDs with a working wavelength of more than 4.5 μm is shown.

Optical and electrical characteristics of asymmetrical InAs/InAsSb/InAsSbP LED heterostructures with the InSb content in the active layer of 0.15 and 0.16 were studied in the temperature range 4.2 -300 K. At T < 150 K, radiative transitions involving donor-acceptor states in the InAs substrate were observed in electroluminescence spectra, and the presence of these states also showed up in the peculiarities of current-voltage characteristics. A strong effect of the quality of the InAsSb/InAsSbP heterointerface on the characteristics of the heterostructures was observed.

Abstract The design and technology for the fabrication of an asymmetric stepped InAs/InAs_1 –_ y Sb_ y /InAsSbP heterostructure with an ultimate InSb content (up to y = 0.17) in the narrow-gap active region by vapor-phase epitaxy from metal-organic compounds are developed. The electroluminescence characteristics of long-wavelength LEDs based on the proposed heterostructure, which emits in the spectral range of 4.6–5.3 μm, are studied. A linear decrease in the quantum efficiency of the electroluminescence with increasing InSb content in the active layer of the LEDs obtained is revealed. The advantage of using the asymmetric heterostructure for fabricating LEDs with a working wavelength of more than 4.5 μm is shown.

The results of studying the electroluminescent and current-voltage characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by gas-phase epitaxy from organometallic compounds are presented. Intense electroluminescence was detected in the spectral range 0.23–0.29 eV at the temperature T = 77 K. The position of the maximum of the main emission band (h ~ 0.24 eV) showed a noticeable “blue” shift with increasing applied forward bias. Based on the performed studies, it was concluded that there is a staggered type II heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface, which is confirmed by the results of the calculation of the energy band diagram.

We report on the electroluminescent and I–V characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by metalorganic vapor-phase epitaxy. In the spectral range of 0.23–0.29 eV, the high-intensity electroluminescence at a temperature of T = 77 K has been observed. The position of the maximum of the main emission band ($$h\nu $$ ~ 0.24 eV) has shown a noticeable blue shift with increasing forward bias. Based on the investigations, a conclusion about the existence of a type-II staggered heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface has been drawn, which is confirmed by the calculated energy band diagram.

Uniform arrays of the InSb quantum dots with a surface density of nQD = 2 × 109 cm–2 were obtained by liquid phase epitaxy on a matrix layer based on a multicomponent InGaAsSb solid solution lattice-matched with the GaSb substrate. The change in the composition of the cationic part of the matrix by using the epitaxial matrix layer allowed to lower the temperature of the epitaxy to T = 430°C and determined the shape of a typical InSb quantum dot in the form of a truncated cone with average values of height h = 3 nm and diameter d = 30 nm, which corresponded to the aspect ratio L = h/d = 0.1.

Asymmetric n-InAs/InAs(1 – y)Sby/p-InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.

AbstractAsymmetric n -InAs/InAs_(1 – _ y )Sb_ y / p -InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.