The unique electronic and optical properties of staggered-alignment heterostructures offer a range of potential electrooptic device applications. We have recently demonstrated that such structures can be fabricated in the well-characterized AlGaAs materials system. We present measurements of the electrooptic properties of staggered-alignment AlGaAs structures. These samples, grown by molecular beam epitaxy, have narrow GaAs layers so that the AlAs X minima provide the lowest energy excited states for electrons, while holes are confined to the GaAs heavy-hole valence band.