We demonstrate monolithic integration of a 100-channel arrayed-waveguide grating (AWG) with 10-GHz channel spacing and 100 optically controlled Michelson-interferometer-based phase and amplitude modulators. The high-resolution AWG showed better than -15-dB crosstalk, and the modulator extinction ratio was better than 20 dB with either electrical or optical modulation control. The twin-integrated devices comprise a 50-mm diameter InP wafer with 1200 independent optoelectronic components.

We discuss monolithic integration of a 100-channel AWG with a 10-GHz channel spacing with 100 Michelson-interferometer-based phase- and amplitude-modulators. The AWG showed approximately 10 dB crosstalk, and the twin-integrated devices comprise a 2” InP wafer.

We overview and summarize the progress of the spectral phase encoded time spreading (SPECTS) optical code division multiple access (O-CDMA) technology. Recent progress included a demonstration of a 320 Gbit/s (32-user x 10 Gbit/s) all-optical passive optical network testbed based on the SPECTS O-CDMA technology and a theoretical prediction of the spectral efficiency at 100% and above. In particular, InP-based integrated photonics allows implementation of SPECTS O-CDMA transmitters and receivers monolithically integrated on a chip. The integrated InP chip technology not only allows robust and compact configurations for practical and low-cost O-CDMA network deployments but also offers code reconfigurations at rapid rates for secure communication applications. (c) 2007 Optical Society of America.

We have demonstrated a semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter at the input for low-loss coupling to planar lightguide circuit silica waveguides or cleaved single-mode optical fiber. These devices exhibit greater than 10 dB fiber-to-fiber gain, output power of +4 dBm, 3-dB modulation bandwidth of 6 GHz, and modulator extinction ratios of 20 dB dc and 14.4 dB RF for a 2.4-V/sub pp/ drive.

Planar Si/InGaAs wafer fused p-i-n photodetectors were fabricated and measured. They show high internal quantum efficiency, high speed, record low dark current, and no evidence of charge trapping, recombination centers, or a bandgap discontinuity at the heterointerface.

A detailed study of the important role of temperature and gas ambient on the bonding between Si and InGaAs wafers was performed. The heterointerface was characterized by fabricating p-i-n photodetectors and measuring the forward and reverse currents, the capacitance, the absolute quantum efficiency, and the response bandwidth. Clear evidence for a thin tunneling barrier is found for nonoptimum fusing conditions.

The fabrication and performance characteristics of 1 mm long three-electrode distributed feedback lasers is reported. CW linewidth of 500 kHz has been obtained. The frequency modulation characteristics of these devices exhibit no thermally induced dip and the magnitude of FM is large enough for practical coherent system application.<>

We report the growth and fabrication of low-threshold high-power high-yield single-longitudinal 1.3-μm InGaAsP/lnP capped mesa buried heterostructure (CMBH) lasers by a combination of hydride and organometallic vapor phase epitaxial techniques. Using a multiple-barrel hydride vapor phase epitaxial (VPE) reactor, we can reproducibly grow high-quality distributed feedback (DFB) double heterostructure (DH) over conventional first-order gratings (grating period = 0.2010 μm) that are etched onto InP substrates. The DH consisted of three layers: a λg = 1.1-μm n-InGaAsP waveguide layer grown directly on the DFB grating; a λg = 1.3-μm InGaAsP active layer; and a p-InP cladding layer. These DH structures exhibit excellent optical and electrical properties with broad area thresholds of 1 kA/cm2. Cross-sectional transmission electron micrographs of this material show clean interfaces and excellent grating preservation with grating amplitudes normally between 600 and 800 A.