The Si(111)-Pb interface is a prototypical metal-semiconductor interface and has been the subject of a number of experimental studies. The Schottky barrier height is known to depend on the initial reconstruction formed by the first monolayer of Pb atoms and we have previously shown that there are structural differences between the buried interfaces. We present surface X-ray diffraction measurements of the interface grown from the incommensurate [Formula: see text] reconstruction and show that, in contrast to the starting surface, the interface comprises the junction between unreconstructed, bulk-like Si(111) and disordered, bulk-like Pb(111). This interface is contrasted with the interface formed by growth on the Si(111)-(7 × 7)-Pb reconstruction at which the starting reconstruction is preserved.

Although it is well known that the γ (fcc) phase of Fe can be stabilised on Cu(001) single crystal substrates, there is still considerable disagreement about the exact nature of the growth mode and the structures that evolve with increasing film thickness. A detailed knowledge of the structure and morphology is essential for a complete understanding of the magnetic properties of ultrathin iron films. Surface X-ray diffraction measurements, recorded in real time during deposition of Fe deposition on Cu(001), are presented. At room temperature, well-defined layer-by-layer growth, with no significant agglomeration of iron, was observed. The specular intensity of the X-ray beam varied parabolically with coverage, as predicted by kinematical theory. Intensity oscillations were observed up to 15 Fe monolayers, at which coverage relaxation to the α (bcc) phase was confirmed. At 85 K the growth is diffusion limited.