Poly(3-methylthiophene) (P3MT)-based Schottky barrier diodes were prepared and their capacitance and conductance were measured as a function of frequency. The loss tangent of these structures shows a maximum which depends on the temperature according to an Arrhenius law. An average activation energy of 0.3 eV is deduced from the position of this maximum. A similar value was found from the temperature dependence of the I – V characteristics of these diodes. In addition, the short-circuit photocurrent versus the photon energy reveals a peak at 1.66 eV which is attributed to the anti-bonding level of the polaron.

Cd0.5Zr2(PO4)3(CdZP) and the partially substituted phase Cd0.25Sr0.25Zr2(PO4)3, prepared by the sol-gel route, belong to the NZP family. The structure of CdZP (S.G.R3̄) has been established by the Rietveld method. The thermal behavior of CdZP, investigated by X-ray powder diffraction, is anisotropic, i.e., the structure expands along c axis and contracts along a axis. Dilatometric measurements and SEM micrographs of ceramics, sintered with 5% ZnO, show that CdSrZP presents the advantage to decrease microcracking, and then anisotropy, occurring during the heating cycle. The thermal expansion coefficient abulk of the ceramic CdSrZP is very small (0.6 × 10−6 °C−1).