Frustrated triangular molecular magnets (MMs) with antiferromagnetic ground states (GSs) are an important class of magnetic systems with potential applications in quantum information processing. The twofold degenerate GS of these molecules, characterized by spin chirality, can be utilized to encode qubits for quantum computing. Furthermore, because of the lack of inversion symmetry in these molecules, an electric field couples directly states of opposite chirality, allowing a very efficient and fast control of the qubits. In this paper we present a theoretical method to calculate the spin-electric coupling for triangular MMs with effective local spins s larger than 1/2, which is amenable to a first-principles implementation based on density functional theory (DFT). In contrast to MMs where the net magnetization at the magnetic atoms is mu(B)/2 (mu(B) is the Bohr magneton), the DFT treatment of frustrated triangular MMs with larger local magnetizations requires a fully noncollinear approach, which we have implemented in the NRLMOL DFT code. As an example, we have used these methods to evaluate the spin-electric coupling for a spin s = 5/2 {Fe-3} triangular MM, where this effect has been observed experimentally for the first time quite recently. Our theoretical and computational methods will help elucidate and further guide ongoing experimental work in the field of quantum molecular spintronics.

Frustrated triangular molecular magnets are a very important class of magnetic molecules since the absence of inversion symmetry allows an external electric field to couple directly with the spin chirality that characterizes their ground state. The spin-electric coupling in these molecular magnets leads to an efficient and fast method of manipulating spin states, making them an exciting candidate for quantum information processing. The efficiency of the spin-electric coupling depends on the electric dipole coupling between the chiral ground states of these molecules. In this paper, we report on first-principles calculations of spin-electric coupling in $\{V_3\}$ triangular magnetic molecule. We have explicitly calculated the spin-induced charge redistribution within the magnetic centers that is responsible for the spin-electric coupling. Furthermore, we have generalized the method of calculating the strength of the spin-electric coupling to calculate any triangular spin 1/2 molecule with $C_3$ symmetry and have applied it to calculate the coupling strength in $\{V_{15}\}$ molecular magnets.

We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carrying out calculations of the phonon dispersion and \textit{ab-initio} molecular dynamics simulations, we first confirmed that these systems, characterized by an unconventional strongly coupled bilayer atomic structure (consisting of Mn atoms buckled to chalcogens forming top and bottom ferromagnetic (FM) planes with antiparallel spin orientation) are dynamically and thermally stable. The analysis of the the magnetic properties shows that these materials have robust AFM order, retaining a much lower energy than the FM state even for under strain. Our electronic structure calculations reveal that pristine MnX and their Janus counterparts are indirect-gap semiconductors, covering a wide energy range and displaying tunable band gaps by the application of biaxial tensile and compressive strain. Interestingly, owing to the absence of inversion and time-reversal symmetry, and the presence of an asymmetrical potential in the out-of-plane direction, Janus XMnY become spin-split gapped systems, presenting a rich physics yet to be explored. Our findings provide novel insights in this physics, and highlight the potential for these two-dimensional manganese chalcogenides in AFM spintronics.

We have performed electron transport and angle-resolved photo-emission spectroscopy (ARPES) measurements on single crystals of transition metal dipnictide TaAs2cleaved along the (2¯01) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between magnetic field and the [2¯01] direction. The results indicate elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved (2¯01) surface and it was found that bulk states pockets at constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level (FL) is increased, which is due to a small n-doping of the samples. This shifts the FL closer to the Dirac point, allowing investigating the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.

We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carrying out calculations of the phonon dispersion and \textit{ab-initio} molecular dynamics simulations, we first confirmed that these systems, characterized by an unconventional strongly coupled bilayer atomic structure (consisting of Mn atoms buckled to chalcogens forming top and bottom ferromagnetic (FM) planes with antiparallel spin orientation) are dynamically and thermally stable. The analysis of the the magnetic properties shows that these materials have robust AFM order, retaining a much lower energy than the FM state even for under strain. Our electronic structure calculations reveal that pristine MnX and their Janus counterparts are indirect-gap semiconductors, covering a wide energy range and displaying tunable band gaps by the application of biaxial tensile and compressive strain. Interestingly, owing to the absence of inversion and time-reversal symmetry, and the presence of an asymmetrical potential in the out-of-plane direction, Janus XMnY become spin-split gapped systems, presenting a rich physics yet to be explored. Our findings provide novel insights in this physics, and highlight the potential for these two-dimensional manganese chalcogenides in AFM spintronics.

N. Pournaghavi ID , M. F. Islam ID , Rajibul Islam ID , Carmine Autieri ID , Tomasz Dietl ID , 3 and C. M. Canali ID 1 Linnaeus University,Department of Physics and Electrical Engineering, 392 31 Kalmar, Sweden International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan (Dated: January 19, 2021)

Using first-principles density functional theory calculations, combined with a topological analysis, we have investigated the electronic properties of Cd3As2 and Na3Bi Dirac topological semimetals doped with nonmagnetic and magnetic impurities. Our systematic analysis shows that the selective breaking of the inversion, rotational, and time-reversal symmetry, controlled by specific choices of the impurity doping, induces phase transitions from the original Dirac semimetal to a variety of topological phases such as topological insulator, trivial semimetal, nonmagnetic and magnetic Weyl semimetal, and Chern insulator. The Dirac semimetal phase can exist only if the rotational symmetry C-n with n > 2 is maintained. One particularly interesting phase emerging in doped Cd3As2 is a coexisting Dirac-Weyl phase, which occurs when only inversion symmetry is broken while time-reversal symmetry and rotational symmetry are both preserved. To further characterize the low-energy excitations of this phase, we have complemented our density functional results with a continuum four-band k . p model, which indeed displays nodal points of both Dirac and Weyl types. The coexisting phase appears as a transition point between two topologically distinct Dirac phases but may also survive in a small region of parameter space controlled by external strain.

Using first-principles density functional theory calculations, combined with a topological analysis, we have investigated the electronic properties of Cd_3As_2 and Na_3Bi Dirac topological semimetals doped with non-magnetic and magnetic impurities. Our systematic analysis shows that the selective breaking of the inversion, rotational and time-reversal symmetry, controlled by specific choices of the impurity doping, induces phase transitions from the original Dirac semimetal to a variety of topological phases such as, topological insulator, trivial semimetal, non-magnetic and magnetic Weyl semimetal, and Chern insulator. The Dirac semimetal phase can exist only if the rotational symmetry C_n with n > 2 is maintained. One particularly interesting phase emerging in doped Cd_3As_2 is a coexisting Dirac-Weyl phase, which occurs when only inversion symmetry is broken while time-reversal symmetry and rotational symmetry are both preserved. To further characterize the low-energy excitations of this phase, we have complemented our density functional results with a continuum four-band k· p model, which indeed displays nodal points of both Dirac and Weyl type. The coexisting phase appears as a transition point between two topologically distinct Dirac phases, but may also survive in a small region of parameter space controlled by external strain.

The quantum anomalous Hall effect (QAHE), characterized by dissipationless quantized edge transport, relies crucially on a nontrivial topology of the electronic bulk band structure and a robust ferromagnetic order that breaks time-reversal symmetry. Magnetically doped topological insulators (TIs) satisfy both these criteria, and are the most promising quantum materials for realizing the QAHE. Because the spin of the surface electrons aligns along the direction of the magnetic-impurity exchange field, only magnetic TIs with an out-of-plane magnetization are thought to open a gap at the Dirac point (DP) of the surface states, resulting in the QAHE. Using a continuum model supported by atomistic tight-binding and first-principles calculations of transition-metal doped Bi2Se3, we show that a surface-impurity potential generates an additional effective magnetic field which spin polarizes the surface electrons along the direction perpendicular to the surface. The predicted gap-opening mechanism results from the interplay of this additional field and the in-plane magnetization that shifts the position of the DP away from the Gamma point. This effect is similar to the one originating from the hexagonal warping correction of the band structure but is one order of magnitude stronger. Our calculations show that in a doped TI with in-plane magnetization the impurity-potential-induced gap at the DP is comparable to the one opened by an out-of-plane magnetization.

The chiral Fe3O(NC5H5)3(O2CC6H5)6 molecular cation, with C3 symmetry, is composed of three six-fold coordinated spin-carrying Fe3+ cations that form a perfect equilateral triangle. Experimental reports demonstrating the spin-electric effect in this system also identify the presence of a magnetic uniaxis and suggest that this molecule may be a good candidate for an externally controllable molecular qubit. Here, we demonstrate, using standard density-functional methods, that the spin-electric behavior of this molecule could be even more interesting as there are energetically competitive reference states associated with both high and low local spins (S = 5/2 vs S = 1/2) on the Fe3+ ions. Each of these structures allow for spin-electric ground states. We find that qualitative differences in the broadening of the Fe(2s) and O(1s) core levels, shifts in the core-level energies, and the magnetic signatures of the single-spin anisotropy Hamiltonian may be used to confirm whether a transition between a high-spin manifold and a low spin manifold occurs.

The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here, we report on a detailed and systematic investigation of transition metal (TM) doped Sb2Te3. By combining density functional theory calculations with complementary experimental techniques, i.e., scanning tunneling microscopy, resonant photoemission, and x-raymagnetic circular dichroism, we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM doped topological insulators. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V-and Fe-doped Sb2Te3 display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity dependent and can vary from in plane to out of plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM doped Sb2Te3 in the ferromagnetic state.

(Ga,Mn)As having a wurtzite crystal structure was coherently grown by molecular beam epitaxy on the {1100} side facets of wurtzite (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time, a truly long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by the proper selection/choice of both the core and outer shell materials.

Stabilization of magnetic order in clusters/nanoparticles at elevated temperatures is a fundamentally challenging problem. The magnetic anisotropy energy (MAE) that prevents the thermal fluctuations of the magnetization direction can be around 1-10 K in free transition metal clusters of around a dozen atoms. Here we demonstrate that a graphene support can lead to an order of magnitude enhancement in the anisotropy of supported species. Our studies show that the MAE of supported Co-5 and Co-13 clusters on graphene increase by factors of 2.6 and 25, respectively. The enhancement is linked to the splitting of selected electronic orbitals that leads to the different orbital contributions along the easy and hard axis. The conductive support enables a magnetic interaction between the deposited species and the nature of the magnetic interaction can be controlled by the separation between supported clusters or by vacancies offering an unprecedented ability to tune characteristics of assemblies.

We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi2Se3 topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify the effects of inversion symmetry and time-reversal-symmetry breaking on the electronic states in the vicinity of the Dirac point. In agreement with experiments, we find evidence that the Mn ion is in the +2 valence state and introduces an acceptor in the bulk band gap. The Mn acceptor has predominantly p character and is localized mainly around the Mn impurity and its nearest-neighbor Se atoms. Its electronic structure and spin-polarization are determined by the hybridization between the Mn d levels and the p levels of surrounding Se atoms, which is strongly affected by electronic correlations at the Mn site. The opening of the gap at the Dirac point depends crucially on the quasiresonant coupling and the strong real-space overlap between the spin-chiral surface states and the midgap spin-polarized Mn-acceptor states.