Monolithically integrated Cu(In, Ga)Se-2 mini-modules were fabricated in order to reduce the width of patterning related dead area. The Cu(In, Ga) Se2 layers were prepared on soda-lime glasses using the multistage process at low substrate temperature below 500 degrees C. A picosecond laser with a wavelength of 532 nm was used for all of the structuring processes (P1, P2, and P3) for the monolithic integration. A "lift-off" type structuring was applied for P1 and P3, and an "ablation" type was for P2. The laser structuring was optimized to be minimizing the dead area width, and the width of about 70 mu m was successfully achieved. A mini-module, in which the optimized structuring processes were applied for the integration, demonstrated a certified efficiency of 16.6%. Copyright (C) 2015 John Wiley & Sons, Ltd.

The thin-film solar cell market has seen a period of consolidation during the last years and many involved companies were forced to stop production due to increasing price pressure from competing cell technologies. Today, thin-film solar industry is gaining momentum again. Especially Cu(In,Ga)Se2 technology evolves at high pace fired by recently achieved record efficiencies of 20.4 percent on flexible polyimide substrate [1] and 20.8 percent on glass substrate [2]. Fresh companies are preparing market entry with matured products and manufacturing technology suitable for high-volume and high-throughput production. Among these key-enabling technologies is laser patterning for cell-to-cell interconnects. Several research groups worked on efficient and reliable laser processes that are now ready for the industrial assessment. Here we present a set of work-horse processes for P1, P2 and P3 scribing of CIGS cells on glass substrate. Optimized parameters are presented for 532 nm and 1064 nm using 50 ps pulses from an all-in-fiber laser system. We further demonstrate the successful realization of functional 8-cell modules with a reduced “dead-zone” width of 70±5 μm and high efficiencies. The certified efficiency of 16.6 percent for our low-dead-zone champion module confirms the observation that shrinking of interconnects has no adverse effects on their electrical quality.

State-of-the-art Cu(In,Ga)Se-2 thin-film technology allows the industrial production of highly efficient solar modules. A significant growth of CIGS-based solar cell production volume can be expected for the coming years. One of the critical manufacturing steps in module production is thin-film patterning which allows the monolithic integration of cell-to-cell interconnects. Today, solar module manufacturers seek to replace sub-optimal needle scribing by suitable laser processes. It has been demonstrated, that ultra-short pulse laser scribing can reduce the overall width per interconnect and increase scribe quality. A promising tool for picosecond laser-scribing is the fiber laser. Here we present the successful implementation of all fiber laser patterning of CIGS modules. (C) 2013 The Authors. Published by Elsevier B.V.

New developments in the thin film solar market continue the trend towards solar modules with higher energy conversion while at the same time, reducing significantly manufacturing costs. Especially thin film technologies based on Cadmiumtellurid (CdTe) or Cu(In, Ga)(S, Se)(2) (CIGS) seem to be suited to improve the energy conversion and hence, take over larger market shares. With this work, we present our latest achievements towards a CIGS all laser scribing process with the emphasis on structuring the absorber layer and its implications to the production. While P1 laser scribing through the substrate is already implemented in production today a variety of different approaches, like lift-off, ablation, or remelting are possible for the P2 process where commonly a mechanical process is state of the art. One challenge which the P2 and P3 processes face is the layer side processing. Therefore a thorough investigation has been conducted including different laser wavelengths (355 nm to 1550 nm), pulse durations (10 ps to 100 ns), and beam shaping to find the best possible solution for each scribing process. Optimization took place utilizing not only resistance measurement and optical microscopy but also LSM, REM, EDX, EL, and Lock-In Thermography. Combining the best results of each scribing process and using a high speed, high accuracy motion system a functional lab size module has been produced with a reduced dead zone of below 200 mu m. In an outlook, a way is presented on how to take the lab results into a productive system and place it in a manufacturing environment.

Recent developments in Cu(In,Ga)Se-2 (CIGS) thin film photovoltaics enabled the manufacturers to produce highly efficient solar modules. Nevertheless, the production process still lacks a competitive process for module patterning. Today, the industry standard for the serial interconnection of cells is still based on mechanical scribing for the P2 and P3 process. A reduction of the non-productive "dead zone" between the P1 and P3 scribes is crucial for further increasing module efficiency. Compact and affordable picosecond pulsed laser sources are promising tools towards all-laser scribing of CIGS solar modules. We conducted an extensive parameter study comprising picosecond laser sources from 355 to 1064 nm wavelength and 10 to 50 ps pulse duration. Scribing results were analyzed by laser scanning microscope, scanning electron microscope and energy dispersive X-ray spectroscopy. We developed stable and reliable processes for the P1, P2 and P3 scribe. The best parameter sets were then used for the production of functional mini-modules. For comparison, the same was done for a selection of nanosecond pulsed lasers. Standardized analysis of the modules has shown superior electrical performance of the interconnections and confirmed the feasibility of a dead zone width of less than 200 mu m on an entire mini module.

Recent achievements in Cu(In,Ga)Se2 (CIGS) thin film technology allow the industrial production ofhighly efficient solar modules. A large growth of the CIGS-based solar cell production volume can beexpected for the coming years thanks to some favorable properties inherent to this absorber type. A majordrawback of CIGS is the inefficient patterning process. Since CIGS is a particularly difficult material forlaser ablation there is still no industrial all-laser scribing solution available. Manufacturers fall back onmechanical needle scribing for the P2 and P3 scribing process and have to accept substantial broadeningof the electrical interconnects due to unpredictable chipping at the scribe borders. In the present study weexplored a large variety of possible processes for the P1-P3 scribing at different wavelengths and indifferent pulse duration regimes. Beside the direct ablation of CIGS with ultrashort pulses we alsoinvestigated more exotic processes like layer side lift-off variants. The resulting scribes were analyzedusing electron microscopy (EM), laser scanning microscopy (LSM), energy dispersive X-ray spectroscopy(EDX) and electrical conductivity measurements. The most promising processes were selected forproducing functional mini-modules. Multiple optimization cycles allowed us to select the processes withthe best performance in the mini-module.

Ablation characteristics of copper and stainless steel with laser pulses from 10 to 100 ps at 1064nm wavelength were studied. The influence of the pulse duration and the number of pulses on the threshold fluence and the penetration depth has been investigated. The results show a strong decrease of the ablation efficiency and quality with increasing pulse duration.

Arrays of through laser-graphitized microstructures have been fabricated in type IIa single-crystal 1.2-mm-thick diamond plates by multipulse laser irradiation with 10-ps pulses at λ =532 nm wavelength. Raman and photoluminescence (PL) spectroscopy studies of the bulk microstructures have evidenced the diamond transformation to amorphous carbon and graphitic phases and the formation of radiation defects pronounced in the PL spectra as the self-interstitial related center, the 3H center, at 504 nm. It is found that the ultrafast-laser-induced structural modifications in the bulk of single-crystal diamond plates occur along {111} planes, known as the planes of the lowest cleavage energy and strength in diamond.

Ultra short (ps, fs) laser pulses are used, when high requirements concerning accuracy, surface roughness, heat affected zone etc. are demanded for surface structuring. Ps-laser systems that are suited to be operated in industrial environments are of great interest for many practical applications. Here results in the field of 3-d structuring (metals and transparent materials), induced processes and structuring of flexible solar cells will be presented. Beside the pulse duration, which is given by the laser system, the user has a wide variety of optimization parameters such as fluence, repetition rate and wavelength. Based on a simple model it will be shown, that there exist optimum laser parameters to achieve maximum volume ablation rates at a given average power. To take benefit of these optimum parameters and to prevent harmful effects like plasma shielding and surface melting, adapted structuring strategies, depending on the requirements, have to be used. Today's ultra short pulsed systems have average powers from a few W up to a few 10W at high repetition rates. The actual available beam guiding systems are limited and can often not fulfill the requirements needed for high throughput structuring with optimized parameters. Based on the achieved results, the needs for future beam guiding systems will be discussed.

Ever since industrially applicable ps laser systems have been available, cold ablation with ultra short laser pulses is of huge interest when high requirements concerning accuracy, defined surface roughness and small heat affected zone are demanded. Interesting applications are in the fields of surface and 3-d structuring with direct and induced processes. For a profitable industrial use of this technology high process efficiency is required, which is enabled by the development of systems with high average power of more than 100 W. The process efficiency directly scales with the average power when the repetition rate of the system is properly chosen. But aside from process efficiency often a high surface quality (low surface roughness, minimized surface melting and no oxidation processes) is desired. These measures are not only strongly affected by the laser parameters but also by the strategy of structuring. Especially for surface structuring the corresponding requirements for the equipment of the beam guiding system are often not accomplishable and therefore there is a strong demand for new technologies which have to be developed.