Poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) based organic solar cells (OSCs) were fabricated and modified with a sulfur-doped carbon quantum dot (S-CQDs) inserted layer on top of the photoactive layer to investigate its effect on devices performance. The surface-engineered S-CQDs synthesized showed strong blue photoluminescence and enhanced UV-vis absorbance in the short-wavelength region, attributed to surface state transitions and band-gap modulation. The results revealed that the light harvesting capabilities were increased by the introduction of the S-CQD layer. Particularly below 450 nm, the absorbance profile broadened without disrupting the characteristic vibronic features of P3HT. The device characterization results demonstrated that an improvement in PCE from 1.76% to 3.07% was achieved owing to improved current density (J SC) and fill factor (FF). With the improved charge extraction and better energy-level alignment at the interface, the increased shunt resistance (R sh) and reduced series resistance (R s) led to an improved FF. Overall, the inserted S-CQDs layer effectively enhanced the optical and electronic properties of the OSCs fabricated, highlighting their potential as an electron transport layer in next-generation organic electronics.

The interfacial energetics of metal-semiconductor junctions critically determine the carrier transport behavior and overall performance of Schottky-based optoelectronic devices. In this work, unmodified carbon quantum dots (CQDs) and phosphorus-doped carbon quantum dots (P-CQDs) were synthesized and comprehensively characterized through transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, UV-Vis spectroscopy (UV-Vis), and scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy (SEM-EDS). The engineered quantum dots were subsequently integrated into n-Si heterojunction architectures to investigate the influence of heteroatom-induced band structure modulation on broadband self-powered photodetection. Under zero-bias operation, the P-CQD/n-Si photodetector demonstrated markedly enhanced optoelectronic performance compared to the undoped CQD/n-Si device. The photocurrent increased from 2.22 & times; 10-5 A (CQD/n-Si) to 9.66 & times; 10-5 A (P-CQD/n-Si) under 100 mW cm-2 illumination. The maximum responsivity reached 0.386 A W-1, while specific detectivity achieved 6.99 & times; 1010 Jones, accompanied by a low noise-equivalent power of 1.46 & times; 10-12 W Hz-1/2. Broadband spectral sensitivity spanning 351-1600 nm was achieved, with pronounced enhancement in the visible-NIR region. Notably, the external quantum efficiency (EQE) was significantly enhanced from similar to 3.34% in the undoped device to similar to 22.88% after phosphorus doping, corresponding to an approximately sevenfold improvement in photon-to-charge conversion efficiency. Overall, phosphorus doping provides an effective strategy for tailoring interfacial barrier properties and quantum dot electronic structure, enabling high-responsivity, low-noise, and high-efficiency self-powered photodetectors suitable for next-generation wide-band optoelectronic applications.

Renewable energy sources are of critical importance for sustainable development worldwide. For the well-being of future generations, it is essential to produce electrical energy in an environmentally friendly and long-term sustainable manner. Among these resources, solar energy holds the most significant potential. Photovoltaic (PV) technology has progressed over decades due to substantial efforts, with current research trends focusing on performance metrics such as high efficiency, stability, and cost-effectiveness. Perovskite solar cells (PSCs) are a prominent research area, not only because of their high efficiency but also due to their ability to be easily produced through low-cost solution processes. Additionally, chalcogenide-based perovskites are emerging as promising alternatives with enhanced stability, lower toxicity, and the potential for cost-effective, scalable production. This study provides a detailed review of advancements in chalcogenide perovskite research, emphasizing the material’s tunable band gaps, superior charge transport properties, and resilience to environmental conditions such as humidity, oxygen, and UV light. Chalcogenide perovskites (CPs), exhibiting graphene-like properties, are considered strong candidates for next-generation PV technologies due to their high charge mobility and flexibility. Various synthesis and optimization strategies such as advanced synthesis techniques, precise doping methods, and innovative interface and additive engineering are discussed to enhance PV performance. In this context, the review bridges fundamental research with practical applications, delineating strategic directions for emerging chalcogenide-based PSCs and optoelectronic devices to meet global energy demands sustainably

Broadband photodetectors simplify multiband sensing by eliminating the need for complex integration of multiple narrow-band devices. Polyoxometalates (POMs), known for their excellent electronic properties and redox activity, enhance this functionality by promoting efficient charge transport and light absorption. In this study, we synthesized a Dawson-type germanium-doped polyoxometalate to explore its photodetection capabilities across the UV–Vis–NIR spectrum. The compound was thoroughly characterized using 31P NMR, FT-IR, UV–Vis spectroscopy, cyclic-voltage (C-V) profiling, SEM, EDX, TEM, and AFM analyses. The fabricated device demonstrated a notable rectification ratio of 1383.62. Under solar illumination, it achieved a minimum noise equivalent power (NEP) of 1.2 × 10–12 WHz−1/2 and a high detectivity of 7.42 × 1010 Jones. Its performance was further evaluated across wavelengths from 351 to 1600 nm without applying external bias, highlighting its potential as a self-powered photodetector. At 1000 nm (6.8 mW/cm2), the device exhibited a responsivity of 22.49 mA/W and a detectivity of 1.46 × 1010 Jones, confirming its suitability for broadband, self-powered UV–Vis–NIR photodetection applications.

Demonstrating significant achievements in efficiency,perovskite solar cells(PSCs)have acquired unique positions in photovoltaics,offering alternatives to conventional commercial silicon solar cells.While there has been significant progress in enhancing photovoltaic performance,obvious stability problems remain a primary challenge that continues to hinder the commercial viability of PSCs.This present review first comprehensively discusses the main challenges to the commercialization of PSCs,including stability problems,ion migration,toxicity,and complexities in large-scale fabrication.It then effectively presents universal strategies to overcome the mentioned problems.Moreover,this review article examines various printing techniques that can be used to improve PSCs,emphasizing their benefits like low-cost components and procedures.Several printing processes are covered in the discussion,such as slot-die coating,spray coating,inkjet printing,doctor-blade coating,roll-to-roll printing,and screen printing.The potential uses of PSCs for the implementation of greenhouses,building-integrated photovoltaic systems,and indoor light energy harvesting.These uses highlight the adaptability of PSCs and demonstrate their ability to transform energy production technologies.Additionally,this review highlights the special qualities of perovskite materials that present chances to surpass silicon solar cells' efficiency restrictions and get close to the Shockley-Queisser limit.In conclusion,the current review provides a brief overview of recent developments,existing challenges,and opportunities of PSCs.It provides a thorough understanding of the merits of highly efficient PSCs fabricated by adopting printing methods to tackle stability problems along with facile fabrication of PSCs using simplified and cost-effective strategies.

We report the first incorporation of diverse lacunary polyoxometalate (POM) nanocluster materials as efficient interface modifiers in perovskite solar cells (PSCs). Devices utilizing POM-modified SnO2 electron transport layers demonstrated marked improvements in open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF), achieving power conversion efficiencies exceeding 21.6%. Transient photovoltage and photocurrent analyses revealed that the B1-type based device exhibited the longest carrier lifetime and most rapid charge extraction rate, indicating optimized charge transport and suppressed recombination losses. Stability assessments under ambient conditions confirmed that B1-type POM-modified devices retained higher efficiency over time with reduced hysteresis compared to control devices. Work function measurements indicated POM-induced energy level alignment shifts, facilitating efficient charge transport. Morphological and structural analyses via scanning electron microscopy and X-ray diffraction confirmed that POMs using tungsten (W) addenda (i.e., B1–W and B2–W) promoted superior perovskite crystallization, yielding larger grain sizes and enhanced crystallinity. These findings establish the potential for lacunary POMs to serve as effective interface modifiers for advancing the efficiency and durability of perovskite-based optoelectronic devices.

A major challenge in PSCs lies in the carrier transport losses induced by band misalignment and elevated series resistance, which adversely impact the fill factor and device stability, ultimately restricting the overall power conversion efficiency. Due to their tunable band gaps, low fabrication cost, strong light-harvesting capability, adequate carrier lifetime, chemical stability, and environmentally benign nature, chalcogenide perovskites have emerged as highly promising materials for optoelectronic applications. In this study, the quaternary semiconductor nanostructure Cu2MnSnS4 (CMTS) was synthesized via a simple and cost-effective hot-injection method and investigated as an alternative inorganic hole transport layer (HTL) candidate. Indium tin oxide-based perovskite solar cells without any metal oxide interlayer achieved a remarkable PCE of 9.87

In view of these distinctive properties, chalcogenide materials have attracted attention in response to the growing need for sustainable energy sources, with a particular focus on the efficient utilization of solar energy. One of the principal challenges associated with PSCslies in addressing the fill factor (FF) deficit and resolving stability concerns. Band alignment and resistance at the interface further reduce the fill factor, thereby limiting device performance. This research demonstrates that Cu2NiSnS4 (CNTS) can serve as an effective hole transport material for perovskite solar cells, offering an enhanced stability. In this study, kesterite-based CNTS is utilized as a hole-selective interlayer in inverted CH3NH3PbI3 perovskite solar cells (PSCs) on ITO/CNTS substrates. CNTS was selected due to its numerous advantages, including the abundance of their constituent elements in nature, non-toxicity, cost-effectiveness, appropriate band gap and absorption coefficient for photovoltaic (PV) applications, as well as their tunable band gap properties. Deposition of CNTS onto ITO glass alters the substrate's work function, resulting in open-circuit voltages exceeding 1.0 V. Solar cells on ITO substrates without a metal oxide layer demonstrated an exceptional power conversion efficiency (PCE) of 10.6 %. This highlights the potential of PSCs for high performance with a single selective contact. Our findings reveal that these cells retain over 93 % of their initial efficiency after 720 h, demonstrating improved stability. Replacing p-type organic materials with inorganic counterparts offers a promising avenue for further research.

Natural clay minerals are increasingly used as superior support materials for various photocatalysts due to their excellent adsorption capacity, negative surface charge, suitable thermal/chemical stability, large specific surface area, and strong surface reactivity, resulting in low agglomeration and suppression of charge recombination. However, they are still insufficient for photocatalysis due to their low efficiency. Therefore, sensitization of clay minerals with dyes to improve the efficiency and specificity of catalysts is considered a promising route for photocatalytic applications. In this work, the effect of dye sensitization on visible light-driven photocatalytic water splitting of microfibrous sepiolite scaffolds as natural photocatalyst supports was investigated for the first time by using various xanthene dyes (eosin Y, rhodamine B and eryhtrosine B (ErB)) and triethanolamine as photosensitizers and sacrificial agents, respectively, in the absence and presence of platinum as a co-catalyst. The clay/dye system was characterized using various techniques such as X-ray photoelectron spectroscopy, transmission electron microscopy, scanning electron microscopy and energy dispersive X-rays. Sep/ErB photocatalysts produced the highest amount of hydrogen among the other Sep/dye scaffold systems because they act as an effective matrix by preventing nanoparticle aggregation and promoting electron transfer due to their excellent crystal structures and physicochemical properties.

Nanocrystals (NCs) of silver antimony sulfide (AgSbS2) in the cubic phase were successfully synthesized using the hot-injection method. This study is the first to investigate the cytotoxic effects of these NCs on human breast adenocarcinoma (MCF-7), colon cancer cell lines (HT-29), and fibroblast cell lines (L929). Additionally, the antibacterial properties of the NCs against gram-positive (Staphylococcus aureus and Bacillus subtilis) and gram-negative (Escherichia coli) pathogenic bacteria were evaluated, along with their DPPH scavenging activities. The crystal structure of the synthesized NCs was elucidated through XRD analysis, revealing characteristic diffraction peaks corresponding to the (111), (200), (220), (311), and (222) planes of the AgSbS2 phase. TEM and SEM techniques were used to comprehensively characterize the NCs. The results showed that spherical NCs were predominantly formed, with an average diameter of approximately 32 ± 10 nm. Cytotoxicity studies demonstrated a significant inhibitory effect of the NCs, particularly on cancer cell lines (MCF-7 and HT-29), in a dose-dependent manner over a 24 h period. These findings highlight the potential of the NCs as anticancer agents. Furthermore, the synthesized NCs demonstrated potent antibacterial properties against the tested microorganisms and notable antioxidant effects by efficiently eliminating DPPH activity. This research highlights the potential of AgSbS2 NCs as versatile agents with applications in biomedical and environmental domains, including cancer therapy, antimicrobial strategies, and free radical neutralization.

Lead-free nanoparticles gain importance due to their environmentally clean and reliable production processes in optoelectronics. In this study, we synthesized AgBiI4 lead-free perovskite material and used it as an interlayer to obtain a Schottky photodiode structure. Optical, morphological, and structural properties were investigated via UV–Vis, SEM, SEM–EDS, AFM, and XRD. The crystal structure was confirmed by X-ray diffraction (XRD) results. The results obtained from the UV–Visible spectrophotometer clearly showed the peaks of the crystal structure at 566.94 nm. The band gap calculated from UV–Vis results was 1.91 eV for AgBiI4 perovskite crystals. We used AgBiI4 structures as interlayers between n-type Si and Al to obtain a photodiode heterostructure and investigate their structural sensing performance using current–voltage and current-transient measurements. Ideality factor and barrier height values were calculated using machine learning. Lead-free perovskite structures recorded excellent photodetector properties, reaching 2.636 A/W responsivity and 1.30 × 1011 Jones detectivity.

All-inorganic cesium lead halide perovskite nanoparticles (CsPbX3, X = Cl, Br) are promising candidates for optoelectronic devices due to their high absorption coefficients, narrow emission linewidths, and superior thermal stability compared to hybrid perovskites. In this work, Schottky photodiodes were fabricated on n-type Si substrates using CsPbBr3 and CsPbCl3 nanoparticle interlayers, both with native oleylamine/oleic acid ligands and after pyridine-based ligand exchange. Structural and morphological analyses via AFM revealed that pyridine treatment improved surface uniformity for CsPbBr3 films but induced aggregation in CsPbCl3 films. Electrical characterization using thermionic emission theory, Cheung’s method, and Norde’s method showed composition- and ligand-dependent variations in barrier height, series resistance, and ideality factors. Under varying illumination intensities, pyridine-treated CsPbBr3 devices (D2) exhibited over tenfold improvements in responsivity and detectivity compared to their untreated counterparts (D1), while pyridine-treated CsPbCl3 devices (D4) demonstrated high performance at low light intensities and maintained strong broadband detection from 351-1600 nm. CsPbCl3 devices with native ligands (D3) displayed unstable performance, excelling only in the long-wavelength infrared region (> 1400 nm). These results highlight the critical role of surface chemistry in tailoring perovskite–silicon photodiodes for broadband photodetection applications.

Methylammonium lead iodide (MAPbI3)-based perovskite solar cells (PSCs) offer highly efficient photovoltaics. However, several disadvantages such as poor stability and possibility of defect formation reducing film quality have restricted its commercialization. In this work, we reported the synthesis of dual- and triple-hetero-atom-doped carbon quantum dots (CQDs) via hydrothermal method and their effect of use as additive on the performance of PSCs. The boron (B) and phosphorous (P)-doped CQDs (B,P-CQDs), sulphur (S) and P-doped CQDs (S,P-CQDs), and B, S, and P-doped CQDs (B,S,P-CQDs) additives were described. Since these CQDs have many functional groups including hydroxyl (–OH), they can easily interact with Pb ions leading to the formation of PbO, as well as interaction with methyl ammonium ions. A reduced halide vacancy density and an increased nucleation energy of perovskite enhance crystal sizes and charge transfer. The passivation of surface defects reduces non-radiative recombination and ion migration, which plays an important role in photodegradation of the MAPbI3 films. Herein, the introduction of S,P-CQDs improved power conversion efficiency (PCE) from 10 to 15

One of the most effective methods for generating renewable energy is the efficient conversion of photons into electrical energy using environmentally sustainable materials. In recent years, the integration of chalcogenide materials, which exhibit graphene-like semiconducting properties and high charge carrier mobility, into perovskite solar cells (PSCs) has garnered significant attention for enhancing the performance, stability, and ecofriendly nature of these devices. In this study, Cu2CoSnS4 (CCTS) nanocrystals were synthesized and utilized as a fully inorganic hole transport layer (HTL) in inverted PSCs. Devices incorporating 6 vol% CCTS achieved a power conversion efficiency (PCE) of 10.07 %, and retained 93 % of their initial efficiency after 720 h under inert storage conditions, without encapsulation. This demonstrates a notable improvement in stability compared to conventional PEDOT: PSS-based devices. The optimized CCTS HTL provided better energy level alignment, reduced moisture ingress, and enhanced charge transport. These findings indicate that CCTS is a promising inorganic HTL candidate for efficient and stable PSCs.

This study delves into the examination of the efficiency, stability, and repeatability of perovskite solar cells (PSCs), a focal point in contemporary photovoltaic (PV) technologies. The aim is to address the challenges encountered in PSCs. To achieve this goal, Ge-doped polyoxometalate, a structure of significance in recent molecular electronics, was employed as a dopant in the hole transport layer (HTL). The study investigated alterations in the conductivity, improvements in efficiency, and changes in PV parameters. The utilization of PEDOT/PSS doped with a maximum of 2% GePOM resulted in an average efficiency increase of 27% in PSCs compared with the reference. Moreover, enhancements in stability and repeatability were also noted. Comparatively, the reference PSC operated at an efficiency of 11.18%, while PSCs incorporating 2% GePOM into PEDOT/PSS as the HTL exhibited a notable increase in the efficiency, reaching 14.22%. Furthermore, the champion device exhibited an observed fill factor value of 0.74, a short-circuit current density (J sc) value of 19.78 mA/cm2, and an open-circuit voltage (V oc) value of 0.98 V. Consequently, noteworthy enhancements have been noticed in the PV parameters of PSCs with the introduction of GePOM doping.

In this study, spray coating and spin coating methods for the titanium oxide (TiO2) layer used as the electron transfer layer (ETL) were compared to examine the performance parameters of organic solar cells. Despite the fact that there is no major change in the VOC value, with VOC measured at 0.589 V for the spray-coated device and 0.548 V for the spin-coated device, the device performance parameters of the device fabricated with TiO2 layer sharply increased, with the current density–voltage (J–VSC), fill factor (FF), and power conversion efficiency (PCE) values obtained by the spray coating method. We demonstrate that spray-coated c-TiO2 layers achieve a higher PCE of 2.92

Narrowband photodetectors are employed in optical communication, where designated wavelengths are used to transmit data, and in environmental sensing to identify specific gases that absorb distinct wavelengths of light. In this study, we developed a novel polyoxometalate compound for application as a near-infrared (NIR) photodetector. Li6 [alpha-P2W18O62]-.28H2O compound was synthesized successfully and was characterized using 31P NMR, FT-IR, UV-Vis, C-V, SEM, TEM, and AFM. We used Li6 [alpha-P2W18O62]-.28H2O compound as interlayer in Schottky type photodetector structure. Photodiode and photodetector measurements were performed under various solar intensities (20, 40, 60, 80, and 100 mW), ultraviolet, visible, and near-infrared wavelengths ranging from 351 to 1600 nm. Notably, the device exhibited an excellent responsivity, external quantum efficiency, and detectivity under near-infrared wavelengths. It showed 64.17 mA/W responsivity, 4.34 x 1010 Jones detectivity and 7.96 % external quantum efficiency at 1000 nm and 0 bias voltage. Moreover, the device demonstrated 4.736 A/W responsivity and 8.57 x 1011 Jones detectivity under solar light. Furthermore, this research introduces a novel compound for developing narrowband photodetectors utilizing polyoxometalate.

In this study, a planar, soluble, thin film-forming and self-assembled small naphthalene diimide (3) molecule with a subtle moiety at the imide-nitrogen was synthesized, and applied for the first time in literature as an interfacial layer between Al and p-Si layers in a Schottky-type photodiode. The morphology of the compound was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thin film structure and morphology affected the optical and electrical properties. The energy levels of the highest occupied molecular orbitals and lowest unoccupied molecular orbitals of 3 were calculated as -6.14 eV and -4.02 eV, corresponding to the band gap of 2.12 eV consistent with density functional theory (DFT) results. Differential scanning calorimetry (DSC) studies revealed a relatively high Tg value at 208 degrees C, indicating high-temperature applicability of the crystalline structure. The I-V measurements of Al/3/p-Si heterostructure were performed under dark and various light power intensities. The current steadily rose with each incremental 20 mW increase in light intensity. The reverse current increased almost 10-fold at 100 mW/cm2 illumination compared to dark measurement. The photodiode's responsivity, photosensitivity, and detectivity factors were elucidated. The photodiode's characteristic values, such as Io, n, phi b, and Rs, were obtained as 3.50 x 10-6 A, 8.24, 0.588 eV and 2.266 k Omega, respectively. The fabricated Schottky-type diode showed promising results for the optoelectronic field. The compound's perfect solubilities in a wide range of solvents, processability, excellent chemical and photochemical stabilities, and exciting optical, thermal and electrochemical properties make it an ideal candidate for thin film and molecular electronics applications.

We demonstrate a strategy to improve the performance of organic solar cells (OSCs) by phosphorous doped CQDs (P-CQDs). The presence of P-CQDs P3HT:PCBM layer (1 vol% of P-CQDs) enhanced photon harvesting in the UV region and emitting visible light, the PCE was increased from 2.19% to 2.48% and champion device provided a FF of 55.34%. The incorporation of P-CQDs leads to effective photons harvesting ability and collection/transport of charge carriers. The optical absorption and crystallinity of photoactive layer improved with the incorporation of P-CQDs. The larger grain size distribution were obtained with P-CQDs additive helping to better charge extraction.

Recently polyoxometalate (POM) compounds have attracted attentions in optoelectronic fields. They can be used as an interlayer between metals and semiconductors to improve the durability, stability, and efficiency of heterojunctions. The addition of polyoxometalate interlayers resulted in high external quantum efficiency and improved optoelectronic parameters, making it functional for photodiode and photodetector applications. In this study, we synthesized Keggin-type alpha-A-(nBu4N)3[PW9O34(tBuSiOH)3]-0.5MeCN2 polyoxometalate compound and it was characterized by SEM, FT-IR, and 31P NMR. Electrochemical behaviors of the synthesized POM compound were studied by Galvanostat. Polyoxometalate (POM) compound was deposited on n-Si by spincoating technique. In addition, effects of POM on the electrical properties of the Al/POM/n-Si/Al device were investigated in detail. The photodiode properties were studied with (I-V) and (I-t) measurements under light intensities ranging from 20 to 100 mW/cm2. Responsivity and detectivity of the POM interlayered photodiode have been increased significantly comparing the undoped one. While Al/n-Si has shown 9.35 x 1010 Jones detectivity and 1.881 A/W responsivity at 20 mW/cm2 light power, Al/POM/n-Si photodiode device has exhibited maximum detectivity (1.29 x 1011 Jones) and responsivity (2.937A/W) at 20 mW/cm2 light power. The external quantum efficiency of polyoxometalate interlayered heterojunction varied from 17.03 % to 34.61 % under various wavelengths. The result revealed that Al/POM/n-Si device can be used for optoelectronic applications.