Since its inception, the trend for lasers has been towards increasing power output, efficiency, and beam quality, all in more compact designs. nLIGHT continues this trend by reporting on power advances with 793 nm laser diodes; power, efficiency and brightness with 976 nm laser diodes, and the packaging of 36 of these laser diodes into a low mass, 213 gram module when coupled into 225.m core fiber with an beam NA of 0.18 when measured at the 95% power enclosure point. The result is at 793 nm a laser module with over 2x the rated power of the previous generation while also increasing efficiency by 3%, and at 976 nm a 1.67x increase in rated power while increasing efficiency by 6 %. Of note, the 976 nm diode lasers were manufactured as standard Broad Area Lasers, and as self-wavelength-locking BALs with a demonstrated efficiency penalty of similar to 1% by wavelength-locking the devices.

Kilowatt-class fiber lasers and amplifiers are becoming increasingly important building blocks for power-scaling laser systems in various architectures for directed energy applications. Currently, state-of-the-art Yb-doped fiber lasers operating near 1060 nm operate with optical-to-optical power-conversion efficiency of about 66%. State-of-the-art fiber-coupled pump diodes near 975 nm operate with about 50% electrical-to-fiber-coupled optical power conversion efficiency at 25C heatsink temperature. Therefore, the total system electrical-to-optical power conversion efficiency is about 33%. As a result, a 50-kW fiber laser will generate 75 kW of heat at the pump module and 25 kW at the fiber laser module with a total waste heat of 100 kW. It is evident that three times as much waste heat is generated at the pump module. While improving the efficiency of the diodes primarily reduces the input power requirement, increasing the operating temperature primarily reduces the size and weight for thermal management systems. We will discuss improvement in diode laser design, thermal resistance of the package as well as improvement in fiber-coupled optical-to-optical efficiency to achieve high efficiency at higher operating temperature. These factors have a far-reaching implication in terms of significantly improving the overall SWAP requirements thus enabling DEW-class fiber lasers on airborne and other platforms.

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, ~915 nm – and ~976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.

Kilowatt-class fiber lasers and amplifiers are becoming increasingly important building blocks for power-scaling laser systems in various different architectures for directed energy applications. Currently, state-of-the-art Yb-doped fiber lasers operating near 1060 nm operate with optical-to-optical power-conversion efficiency of about 66%. State-of-the-art fiber-coupled pump diodes near 975 nm operate with about 50% electrical-to-fiber-coupled optical power conversion efficiency at 25C heatsink temperature. Therefore, the total system electrical-to-optical power conversion efficiency is about 33%. As a result, a 50-kW fiber laser will generate 75 kW of heat at the pump module and 25 kW at the fiber laser module with a total waste heat of 100 kW. It is evident that three times as much waste heat is generated at the pump module. While improving the efficiency of the diodes primarily reduces the input power requirement, increasing the operating temperature primarily reduces the size and weight for thermal management systems. We will discuss improvement in diode laser design, thermal resistance of the package as well as improvement in fiber-coupled optical-to-optical efficiency to achieve high efficiency at higher operating temperature. All of these factors have a far-reaching implication in terms of significantly improving the overall SWAP requirements thus enabling DEW-class fiber lasers on airborne and other platforms.

There is a great interest in the development of high-power, high-efficiency, and low-cost quasicontinuous wave (QCW) diode laser bars and arrays for pumping solid state lasers. We report on the development of kW-class 88x-nm diode laser bars that are based on a bipolar cascade design, in which multiple lasers are epitaxially grown in electrical series on a single substrate and separated by low-resistance tunnel junctions with resistance as low as 8.0 x 10(-6) Omega-cm(2). QCW power of 630 W was demonstrated in a 3-mm-wide minibar with 3-mm cavity length. Peak efficiency of 61% was measured with 200 mu s and 14 Hz pulses, at 10 degrees C. Further power scaling was demonstrated in a 1-cm-wide bar with 3-mm cavity length, where a record peak power of 1.8 kW was measured at 1-kA drive current. Ongoing work for further power scaling includes development of triple-junction diode laser bars. (C) 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)

There is great interest in the development of high-power, high-efficiency and low cost QCW 88x-nm diode laser bars and arrays for pumping solid state lasers. We report on the development of kW 88x-nm diode laser bars that are based on a bipolar cascade design, in which multiple lasers are epitaxially grown in electrical series on a single substrate. Multiple laser junctions, each of which is based on nLight’s high performance 88x-nm epitaxial design, are separated by low resistance tunnel junctions with resistance as low as 8.0x10-6 Ω-cm2. Optimization of bar geometry and wafer fabrication processes was explored for electrical and optical performance improvement in double-junction diode lasers. A QCW power of 630 W was demonstrated in a 3-mm wide mini-bar with 3-mm cavity length. Peak efficiency of 61% was measured with 200 s and 14 Hz pulses, at a heatsink temperature of 10 °C. Further power scaling was demonstrated in a 1-cm wide bar with 3-mm cavity length, where a record high peak power of 1.77 kW was measured at 1 kA drive current. Ongoing work for further power scaling includes development of triple-junction diode laser bars and double-junction bar-stack that emits < 10kW optical power.

There is great interest in the development of high-power, high-efficiency InP-based broad area pump diode lasers operating in the 14xx-15xx nm band to be used for resonant-pumping of Er-doped solid state lasers. Cryogenic cooling of diode lasers can provide great benefit to performance, arising from the dramatic reduction in the threshold current and the increase in the diode’s slope efficiency. These improvements are attributed to reduction in the non-radiative losses and leakage current associated with thermionic emission of carriers from the quantum well. This is, however, at the expense of a large increase in the diode voltage, limiting the power conversion efficiency at cryogenic temperatures. In this work, we report on the development of high-power, high-efficiency diode lasers and stacked arrays operating at 15xx-nm, which are specifically designed and optimized for operation at cryogenic temperatures. We show that the diode voltage defects under cryogenic operation can be greatly reduced through reducing the energy band offsets at the hetero-interface, and through material change to reduce the dopant ionization energy, effectively mitigating carrier freeze-out at low temperatures. Optical cavity designs and band engineering optimization are also explored for low intrinsic optical loss and low carrier leakage. A peak power conversion efficiency of >74% was demonstrated at a temperature of ~100K in a 15xx-nm single emitter. Record high peak conversion efficiency of 71% and peak power of > 500 W were also demonstrated in a stacked array, under QCW pulses of 1 ms and 10 Hz.

Facets of high-power broad area diode lasers are typically coated with one high-reflecting and one partially reflecting layer to improve slope efficiency and maximize output power. The typical cavity lengths of commercial devices have also been progressively increasing, mainly to reduce temperature rise at the active region and improve laser performance and reliability. The asymmetric reflectivities and long cavity length, however, result in a highly inhomogeneous longitudinal profile of the photon density, which induces a spatially non-uniform carrier distribution, so-called longitudinal spatial hole burning (LSHB). A more uniform longitudinal photon and carrier distribution is believed to improve the overall gain of the cavity and reduce gain saturation, although further study is required to understand the impact of LSHB to power efficiency and its implication in laser design optimization to achieve higher peak powers. We present a phenomenological model that incorporates LSHB to describe longitudinal photon and carrier density inhomogeneity, as well as light-current characteristics of a diode laser. The impact of LSHB on the power efficiency is demonstrated through numerical calculation and can be significant under high-power operations. This presents new guidelines for high-power diode laser designs, in which LSHB imposes limits on reducing facet reflectivity and/or increasing cavity length, beyond which performance deteriorates. Alternatively, effects of LSHB can be mitigated through longitudinal patterning of the waveguide or contact to achieve high-power and high-efficiency diode lasers. We propose specially designed longitudinal patterning of electrical contact to mitigate LSHB. Ongoing device implementation will be used to demonstrate performance benefits.

We present our recent efforts to improve power rating, efficiency, reliability, and cost of diode laser bars in the 88x nm wavelength band. QCW kW-class diode laser bars are grown by metal-organic chemical vapor deposition (MOCVD), and are cleaved, passivated, coated, and die bonded onto either standard copper CS-style heat sinks using indium solder, or onto expansion matched CuW CS heat sinks using AuSn solder. In an effort to realize high power operation, the high efficiency 880-nm epitaxial design has been optimized. Bars of varying fill factors, cavity lengths, and facet coating reflectivities are explored to improve the rated electrical to optical (E-O) efficiency up to approximately 70% under low duty cycle QCW operations. The enhanced E-O efficiency makes possible not only the passive cooling of the devices, but also reliable operation in the kW power range. We demonstrate that the semiconductor laser bars can survive over 100 million laser shots working in QCW mode. It is expected that the development of these passively cooled, highly efficient and highly reliable QCW kW-class diode laser bars will enable commercial applications.

High power diode lasers in 7xx-nm region, have been needed for various applications. Compared to 9xx nm lasers that have been developed extensively in the last 20 years, high power lasers at 7xx-nm region presents much more challenges for operation power, efficiency, temperature performance and reliability. This paper will present recent progresses on 7xx nm laser diodes for the above attributes. Two laser designs will be reviewed and high power diode laser performance and reliability will be presented. Single emitter devices, with 200μm wide emitting width, show up to 10W reliable operation power, with peak efficiency more than 65%. Accelerated life testing at 12A, 50°C heatsink temperature has been running for thousands of hours. High temperature performance and high COMD threshold (> 20W) will also be shown. Life-test failure modes will also be discussed. In summary, with advanced epitaxial structure design and MOCVD process, critical facet passivation and advanced heatsink and bonding technology, 7xx-8xx nm devices have been demonstrated with high performance and reliability similar to those of 9xx nm devices.

Diode laser modules based on arrays of single emitters offer a number of advantages over bar-based solutions including enhanced reliability, higher brightness, and lower cost per bright watt. This approach has enabled a rapid proliferation of commercially available high-brightness fiber-coupled diode laser modules. Incorporating ever-greater numbers of emitters within a single module offers a direct path for power scaling while simultaneously maintaining high brightness and minimizing overall cost. While reports of long lifetimes for single emitter diode laser technology are widespread, the complex relationship between the standalone chip reliability and package-induced failure modes, as well as the impact of built-in redundancy offered by multiple emitters, are not often discussed. In this work, we present our approach to the modeling of fiber-coupled laser systems based on single-emitter laser diodes.

Recent efforts to improve the reliability of high-power broad-area diode lasers operating in the 9xx nm wavelength band have yielded single emitter devices with excellent reliability to >15 W. However, in applications requiring fiber coupling, the fiber coupling power of a single emitter device is rather limited by its linear power density, and hence brightness of the device. Unfortunately, due to a rapid increase in the slow-axis divergence, a typical broad-area diode laser offers a much lower brightness increase and an earlier rollover than its output power. In this work, we show that thermal lensing (rather than carrier- or gain-induced guiding) in the slow axis is the predominant cause of beam quality degradation at increased driving current. Some of the techniques which are presented include the use of cavity length scaling and thermal path engineering. It is expected these approaches are critical to enabling continued scaling of highbrightness fiber coupled diode lasers.

We report on the performance of a 100 W, 105 mu m, 0.17 NA (filled) fiber-coupled module operating at 976 nm. Volume holographic (Bragg) gratings are used to stabilize the emission spectrum to a 0.2 nm linewidth and wavelength-temperature coefficient below 0.01nm/degrees C with virtually no penalty to the operating power or efficiency of the device. The typical fiber coupling efficiency for this design is >90%, enabling a rated operating efficiency of similar to 50%, the highest reported for a 100W/105 mu m-class diode pump module (wavelength stabilized or otherwise).

A new class of high power high brightness 808 nm QCW laser diode mini bars has been developed. With nLight's nXLT facet passivation technology and improvements in epitaxial structure, mini bars of 3 mm bar width with high efficiency design have tested to over 280 W peak power with peak efficiency over 64% on conduction cooled CS packages, equivalent to output power density near 130 mW/μm. These mini laser bars open up new applications as compact, portable, and low current pump sources. Liftests have been carried out on conduction cooled CS packages and on QCW stacks. Over 370 million (M) shots lifetest with high efficiency design has been demonstrated on CS so far without failure, and over 80 M shots on QCW stacks with accelerated stress lifetest have also proven high reliability on mini bars with high temperature design. Failure analysis determined that the failure mechanism was related to bulk defects, showing that mini laser bars are not prone to facet failure, which is consistent with the large current pulse test and failure analysis on high power single emitters.

This paper presents reliable high power and high brightness 9xx-nm single emitter laser diodes, which have been designed for various multi-emitter fiber-coupled modules. Diode lasers from legend generation have been life-tested with currents up to 14A at heat-sink and junction temperatures of 50°C and 80°C respectively, and have accumulated more than 15,000 hours of life-test duration. In order to further improve reliable operational power and optimize beam quality, new generation devices have been developed. The new devices demonstrated more than 20W CW rollover power without catastrophic optical mirror damage (COMD). Near-field/far-field patterns have also been improved significantly. In addition to step-stress life-tests, a 7-level multi-cell life-test was designed to investigate acceleration factors relative to the operation conditions. Junction temperatures ranging from 60°C to 110°C and current from 14A to 18A were used in this multi-cell life-test. The ongoing multi-cell life-test has accumulated 1.3 million raw device hours and shown very few device failures in up to 7000 hours duration. Such a low failure rate doesn't allow a meaningful estimation of acceleration factors. When nominal acceleration factors are used, multi-cell life-test data supports ∼500 FIT, with 90% confidence, at 10W, 33°C/50°C heat-sink/junction temperatures.

We report on the progress of highly-reliable, high-efficiency 885-nm diode laser bar arrays. Conduction-cooled hardsoldered bars rated to 60W and 57% conversion efficiency demonstrate >30,000 device hours under 1-sec on, 1-sec off hard pulse conditions failure-free. Microchannel-cooled bars rated to 100W and 62% efficiency demonstrate >100,000 accelerated device hours failure-free. Integrated volume Bragg grating fast axis lenses provide wavelength stabilization at low cost. Vertically stacked arrays (seven bars each) of such configuration are demonstrated with a 0.8 nm FWHM spectral width and rated to 700W, 53% conversion efficiency.

We report on recent progress in the control of optical modes toward the improvement of commercial high-performance diode laser modules. Control of the transverse mode has allowed scaling of the optical mode volume, increasing the peak output power of diode laser emitters by a factor of two. Commercially-available single emitter diodes operating at 885 nm now exhibit >25 W peak (12 W rated) at >60% conversion efficiency. In microchannel-cooled bar format, these lasers operate >120 W at 62% conversion efficiency. Designs of similar performance operating at 976 nm have shown >37,000 equivalent device hours with no failures. Advances in the control of lateral modes have enabled unprecedented brightness scaling in a fiber-coupled package format. Leveraging scalable arrays of single emitters, the conductively-cooled nLIGHT PearlTM package now delivers >80 W peak (50 W rated) at >53% conversion efficiency measured from a 200-μm core fiber output and >45 W peak (35 W rated) at >52% conversion efficiency measured from a 100-μm fiber output. nLIGHT has also expanded its product portfolio to include wavelength locking by means of external volume Bragg gratings. By controlling the longitudinal modes of the laser, this technique is demonstrated to produce a narrow, temperature-stabilized spectrum, with minimal performance degradation relative to similar free-running lasers.

A conductively cooled laser diode package design with hard AuSn solder and CTE matched sub mount is presented. We discuss how this platform eliminates the failure mechanisms associated with indium solder. We present the problem of catastrophic optical mirror damage (COMD) and show that nLight's nXLT (TM) facet passivation technology effectively eliminates facet defect initiated COMD) as a failure mechanism for both single emitter and bar format laser diodes. By combining these technologies we have developed a product that has high reliability at high powers, even at increased operation temperatures. We present early results from on-going accelerated life testing of this configuration that suggests an 808nm, 30% fill factor device will have a MTTF of more than 21khrs at 60W CW, 25 degrees C operating conditions and a MTTF of more than 6.4khrs when operated under hard pulsed (1 second on, 1 second off) conditions.