The market for compound semiconductor based devices, while much smaller than silicon based devices, continues to expand. Several types of products have now reached the stage of significant manufacturing volumes, including light-emitting diodes (LEDs), laser diodes (LDs), solar cells and photocathodes. Electronic devices, such as HEMTs and HBTs, are also increasing in volume to fill a need in the cellular phone, DBS, and other high frequency marketplaces. All of these devices are based on bandgap engineering and require one or more epitaxial layers. Growing these epitaxial layers has traditionally been a low volume and expensive process, typically on single small wafers or pieces of wafers.

This paper reports on the large area growth of InGaP/GaAs heterostructures for short wavelength applications (λ ∼ 650 nm) by low pressure MOVPE in a vertical, high speed, rotating disk reactor. Highly uniform films were obtained both on a single 50 mm diam wafer at the center of a 5 inch diam wafer platter and on three, 50 mm diameter GaAs wafers symmetrically placed on a 5 inch diam platter. Characterization was performed by x-ray diffraction, SEM, and room temperature photoluminescence (PL) mapping. For the single wafer growth, PL mapping results show that the total range on wavelength was ±2 nm with a 2 mm edge exclusion. The standard deviation of the peak wavelength,σ w , is 0.7 nm. Thickness uniformity, measured by SEM, is less than 2%. Similar results were obtained for the multi-wafer runs. Each individual wafer has aσ w of 1.1 nm. The wafers have nearly identical PL maps with the variation of the average wavelength from the three wafers within ±0.1 nm.

This paper reports on the large area growth of InGaP/GaAs heterostructures for short wavelength applications (A 650 nm) by low pressure MOVPE in a vertical, high speed, rotating disk reactor. Highly uniform films were obtained both on a single 50 mm diam wafer at the center of a 5 inch diam wafer platter and on three, 50 mm diameter GaAs wafers symmetrically placed on a 5 inch diam platter. Characterization was performed by x-ray diffraction, SEM, and room temperature photoluminescence (PL) mapping. For the single wafer growth, PL mapping results show that the total range on wavelength was -+2 nm with a 2 mm edge exclusion. The standard deviation of the peak wavelength, aw, is 0.7 rim. Thickness uniformity, measured by SEM, is less than 2%. Similar results were obtained for the multi-wafer runs. Each individual wafer has a (rw of 1.1 nm. The wafers have nearly identical PL maps with the variation of the average wavelength from the three wafers within +0.1 nm.