The photostability of bulk heterojunction organic photovoltaic films containing a polymer donor and a fullerene-derivative acceptor was examined using resonance Raman spectroscopy and controlled laser power densities. The polymer donors were poly(3-hexylthiophene-2,5-diyl) (P3HT), poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), or poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7). Four sample preparation methods were studied: (i) thin or (ii) thick films with fast solvent evaporation under nitrogen, (iii) thick films with slow solvent evaporation under nitrogen, and (iv) thin films dried under nitrogen followed by thermal annealing. Polymer order was assessed by monitoring a Raman peaks full width at half-maximum and location as a function of illumination time and laser power densities from 2.5 x 10(3) to 2.5 x 105 W cm(-2). Resonance Raman spectroscopy measurements show that before prolonged illumination, PCDTBT and PTB7 have the same initial order for all preparation conditions, while P3HT order improves with slow solvent drying or thermal annealing. All films exhibited changes to bulk heterojunction structure with 2.5 x 10(5) Wcm(-2) laser illumination as measured by resonance Raman spectroscopy, and atomic force microscopy images show evidence of sample heating that affects the polymer over an area greater than the illumination profile. Photostability data are important for proper characterization by techniques involving illumination and the development of devices suitable for real-world applications.
Fluorescence and Raman instrumentation was developed to elucidate morphology, information on local environment, and material properties of target systems. Far-field fluorescence and luminescence spectroscopic measurements were performed using a pulsed super-continuum laser source and detector with high temporal resolution. With this arrangement morphologies of structures were coupled with time-correlated data. Polymeric beads and Alexa Fluor 594-phalloidin labeled cellular actin structures of cultured cells were imaged below the diffraction limit using stimulated emission depletion to resolve structures to ≈40nm. Lifetime imaging revealed a 2.0 ± 0.1 ns lifetime for fluorescently-labeled beads in confocal and depletion imaging modes. Depletion imaging was also able to display a change of 2.2 to 2.9 ns for different regions of the cellular actin network of cultured cells with a possible difference in lifetime caused by tryptophan quenching of the dye. Subdiffraction imaging with a resolution of ≈40 nm was also accomplished using luminescence depletion of photostable giant CdSe/14CdS nanocrystal quantum dots in air. Nanocrystal quantum dots, typically not prone to depletion, exhibited this phenomenon when excited with an energy of 50 pJ and 2 nJ of depletion energy. Luminescence depletion required half the energy compared to stimulated emission depletion to achieve the same resolution limit. The luminescence was depleted by as much as ≈92% with no observable photobleaching. Raman measurements of polymer films were performed with 532-nm laser illumination using scanning angle and conventional 180° backscattering modes to determine chemical information. The scanning angle mode achieved an angle resolution of 0.09° and was used to probe a thin layer of polystyrene as well as a diblock copolymer of polystyrene and poly(3-hexylthiophene-2,5-diyl). Enhancements to the Raman signals at selected angles lower than the critical angle for total internal reflection, characteristic of waveguides, were measured. An additional enhancement in the Raman signal results from resonant conditions for the diblock copolymer. The epi-collection geometry was used to gain spectroscopic information regarding to the stability of heterojunction solar cells with the aid of resonance Raman spectroscopy. Raman spectral characteristics corresponding to thiophene-based functional groups were used to relate stability of the polymers under different processing conditions such as solvent and thermal annealing while undergoing laser induced photodegradation.
A scanning angle (SA) Raman microscope with 532-nm excitation is reported for probing chemical content perpendicular to a sample interface. The instrument is fully automated to collect Raman spectra across a range of incident angles from 20.50 to 79.50° with an angular spread of 0.4±0.2° and an angular uncertainty of 0.09°. Instrumental controls drive a rotational stage with a fixed axis of rotation relative to a prism-based sample interface mounted on an inverted microscope stage. Three benefits of SA Raman microscopy using visible wavelengths, compared to near infrared wavelengths are: (i) better surface sensitivity; (ii) increased signal due to the frequency to the fourth power dependence of the Raman signal, and the possibility for resonant enhancement; (iii) the need to scan a reduced angular range to shorten data collection times. These benefits were demonstrated with SA Raman measurements of thin polymer films of polystyrene or a diblock copolymer of polystyrene and poly(3-hexylthiophene-2,5-diyl). Thin film spectra were collected with a signal-to-noise ratio of 30 using a 0.25 s acquisition time.
Time binning is used to increase the number of photon counts in the peak channel of stimulated emission depletion fluorescence lifetime decay curves to determine how it affects the resulting lifetime image. The fluorescence lifetime of the fluorophore, Alexa Fluor 594 phalloidin, bound to F‐actin is probed in cultured S2 cells at a spatial resolution of ~40 nm. This corresponds to a 10‐fold smaller probe volume compared to confocal imaging, and a reduced number of photons contributing to the signal. Pixel‐by‐pixel fluorescence lifetime measurements and error analysis show that an average of 40 ± 30 photon counts in the peak channel with a signal‐to‐noise ratio of 20 is enough to calculate a reliable fluorescence lifetime from a single exponential fluorescence decay. No heterogeneity in the actin cytoskeleton in different regions of the cultured cells was measured in the 40–400 nm spatial regime.
Interest in realizing conjugated polymer-based films with controlled morphology for efficient electronic devices, including photovoltaics, requires a parallel effort to characterize these films. Scanning angle (SA) Raman spectroscopy is applied to measure poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)-blend morphology on sapphire, gold, and indium tin oxide interfaces, including functional organic photovoltaic devices. Nonresonant SA Raman spectra are collected in seconds with signal-to-noise ratios that exceed 80, which is possible due to the reproducible SA signal enhancement. Raman spectra are collected as the incident angle of the 785 nm excitation laser is precisely varied upon a prism/sample interface from approximately 35 to 70°. The width of the ∼1447 cm(-1) thiophene C═C stretch is sensitive to P3HT order, and polymer order varied depending on the underlying substrate. This demonstrates the importance of performing the spectroscopic measurements on substrates and configurations used in the functioning devices, which is not a common practice. The experimental measurements are modeled with calculations of the interfacial mean square electric field to determine the distance dependence of the SA Raman signal. SA Raman spectroscopy is a versatile method applicable whenever the chemical composition, structure, and thickness of interfacial polymer layers need to be simultaneously measured.
Subdiffraction spatial resolution luminescence depledon imaging was performed with giant CdSe/14CdS nanocrystal quantum dots (g-NQDs) dispersed on a glass slide. Luminescence depletion imaging used a Gaussian shaped excitation laser pulse overlapped with a depletion pulse, shaped into a doughnut profile, with zero intensity in the center. Luminescence from a subdiffraction volume is collected from the central portion of the excitation spot, where no depletion takes place. Up to 92% depletion of the luminescence signal was achieved. An average full width at half-maximum of 40 +/- 10 nm was measured in the lateral direction for isolated g-NQDs at an air interface using luminescence depletion imaging, whereas the average full width at half-maximum was 450 +/- 90 nm using diffraction-limited, confocal luminescence imaging. Time-gating of the luminescence depletion data was required to achieve the stated spatial resolution. No observable photobleaching of the g-NQDs was present in the measurements, which allowed imaging with a dwell time of 250 ms per pixel to obtain images with a high signal-to-noise ratio. The mechanism for luminescence depletion is likely stimulated emission, stimulated absorption, or a combination of the two. The g-NQDs fulfill a need for versatile, photostable tags for subdiffraction imaging schemes where high laser powers or long exposure times are used.
Supercontinuum (SC) stimulated emission depletion (STED) fluorescence lifetime imaging is demonstrated by using time-correlated single-photon counting (TCSPC) detection. The spatial resolution of the developed STED instrument was measured by imaging monodispersed 40-nm fluorescent beads and then determining their fwhm, and was 36 ± 9 and 40 ± 10 nm in the X and Y coordinates, respectively. The same beads measured by confocal microscopy were 450 ± 50 and 430 ± 30 nm, which is larger than the diffraction limit of light due to underfilling the microscope objective. Underfilling the objective and time gating the signal were necessary to achieve the stated STED spatial resolution. The same fluorescence lifetime (2.0 ± 0.1 ns) was measured for the fluorescent beads by using confocal or STED lifetime imaging. The instrument has been applied to study Alexa Fluor 594-phalloidin labeled F-actin-rich projections with dimensions smaller than the diffraction limit of light in cultured cells. Fluorescence lifetimes of the actin-rich projections range from 2.2 to 2.9 ns as measured by STED lifetime imaging.