The effect of the electron irradiation at high temperatures T-i (300 and 500 degrees C) and of the subsequent annealing on the current-voltage characteristics and DLTS spectra of high-voltage integrated 4H-SiC Schottky diodes is compared for the first time. The optimal annealing modes of the structures irradiated with 0.9 MeV electrons are determined. It is shown that the irradiation with a relatively low fluence Phi = 10(16) cm(-2) at 300 degrees C leads to an increase in the base resistance R-b by approximately an order of magnitude, and the initial value of R-b can be completely restored by a single annealing in a nitrogen atmosphere at a temperature of 250 degrees C for 60 min. At the same time, however, annealing affects only slightly the DLTS spectra measured after the irradiation. With increasing Phi, the longer annealing is required to fully restore the R-b. However, with the fluence increasing to Phi >= 5 x 10(16) cm(-2), the effect of a "reverse annealing " was observed in SiC for the first time: the resistance of the base grows as a result of the annealing. Irradiation at temperature of 500 degrees C leads at Phi >= 5 x 10(16) cm(-2) to an even more pronounced effect of reverse annealing. It is demonstrated that the presence of DLTS-detected acceptor centers arising as a result of the "hot " irradiation in the upper half of the band gap can explain neither the change in the current-voltage characteristics nor the results of annealing.

In this study, the dV/dt ruggedness of commercial 4H-SiC Schottky diodes C3D02060A (Wolfspeed) with DC blocking voltage of 600 V and continuous forward current of 2 A was investigated. The quasi-static reverse current-voltage characteristics of the diodes were measured in the recoverable avalanche breakdown regime up to currents of about 7 A. The mature avalanche breakdown voltage was measured to be 1180 V which is almost twice the rated blocking voltage of 600 V. The dV/dt tests were performed with the use of a pulse current generator capable of generating short (3 ns), high-current (up to 80 A), high-voltage (up to 4 kV at 50-ohm load) pulses. The dV/dt limit was found to be 1260 V/ns, in combination with the value of diode terminal voltage of 750 V. Based on TCAD simulations, the impact of unavoidable lead inductance of TO-220A package on the dV/dt limit is pointed out. It is shown that a high voltage is induced on semiconductor structure being higher than the voltage on diode external terminals. As a result, diode failure occurs, although the diode terminal voltage is significantly lower than the mature avalanche breakdown voltage of semiconductor structure.

The effect of high-temperature irradiation with 15 MeV protons on the parameters of high-voltage 4H-SiC Schottky diodes has been studied at irradiation temperatures of 23-500 degrees C and doses in the range from 7 x 10(13) to 2 x 10(14) cm(-2). After the irradiation with a dose of 10(14) cm(-2) at room temperature, the forward current at a forward voltage U = 2 V decreases by similar to 10 orders of magnitude. In this case, the cutoff voltage U-c, equal to similar to 0.6 V in unirradiated devices, decreases to U-c similar to 0.35 V. By contrast, irradiation with the same dose at a temperature of 500 degrees C leads to an increase in U-c up to U-c approximate to 0.8 V. At the same reference value of the forward voltage U = 2 V, the decrease in current, compared to the value in unirradiated devices, was smaller by similar to 4 orders of magnitude. In the entire range of doses and irradiation temperatures under study, the forward current-voltage characteristic of diodes at U > U-c is linear up to U <= 2 V.

Electron irradiation of high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of the low frequency noise. On exponential part of the current-voltage characteristics and on linear part of current-voltage characteristics in non-irradiated samples, low frequency noise always has the form of the 1/f noise. On linear part of the current-voltage characteristics in irradiated diodes the generation recombination (GR) noise predominates. Temperature dependences of the base resistivity and character of GR noise indicate that mainly Z1/2 center contributes to the change in the parameters of irradiated samples. Capture cross section of this level, obtained from noise measurements, is within the range (8×10-16-2×10-15) cm2 and only weakly depends on temperature.

We report the results of the high energy (0.9 MeV) electron irradiation impact on the electrical properties of high voltage Ni/4H-SiC Schottky diodes. Within the range of the irradiation dose from 0.2 × 1016 cm−2 to 7 × 1016 cm−2, electron irradiation led to 6 orders of magnitude increase in the base resistance, appearance of slow relaxation processes at pico-ampere current range, and increase in the ideality factor.

Main physical features of the collector resistance modulation processes have been studied via a one-dimensional simulation for n(+)-p-n(0)-n(+) 4H-SiC bipolar junction transistor. The motion dynamics of minority carriers (holes) across the n(0) collector layer during the switch-on process is traced. It is demonstrated that the effective modulation of the collector resistance is only possible in the case of a rather fast transistor switch-on. A necessary condition for the fast switch-on is the large amplitude and short leading edge of the base current pulse. (C) 2016 Elsevier Ltd. All rights reserved.

The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, that at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode area with a comparatively high barrier and the current flowing through the nanosized patches with a comparatively low barrier.

The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77 K, the dependence of the spectral noise density on current, S-I(I), differs fundamentally between the cases of the current flowing through the main part of the diode with a comparatively high barrier and the current flowing through the nano-sized patches with a comparatively low barrier. (C) 2014 Elsevier Ltd. All rights reserved.

Criteria for occurrence of the quasineutral diffusion mode have been investigated in terms of a generalized approach that takes into account the dependences of the electron and hole velocities on the electric field. These criteria should be used to describe the carrier transport in bases of forward biased bipolar semiconductor devices (diodes, thyristors, and power bipolar transistors in the saturation mode). The criteria appreciably differ from the previously obtained commonly accepted criteria. It is demonstrated that equations describing the carrier transport in the quasineutral approximation in n- and p-type semiconductors are different. These equations are used to obtain analytical conditions in which the diffusion mode is operative. The applicability limits of the diffusion approximation in simulation of semiconductor structures are found. The analytical results are confirmed by a numerical experiment. (C) 2010 Elsevier Ltd. All rights reserved.

Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and theoretically in dc and 8-ms single pulse modes. To simulate the self-heating, an electro-thermal model was used to calculate non-isothermal current-voltage characteristics at dc and current-time dependences at pulsed measurements. The dynamic instability of N-type was observed: the current decreases in spite of increasing of bias applied to the structure. At dc, irreversible diode degradation was found to occur at a current density of about 1700 A/cm2. Under a single current surge 8-ms pulse, the loss of thermal stability has been found at a current density of approximately 9000 A/cm2. Comparison of experimental data and simulations showed that the local temperature in the diode base at the end of the 8-ms, 9000-A/cm2 pulse reaches 2000 – 2300 K.

Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.

Self-heating of high-voltage (6kV class) 4H-SiC rectifier p+–n–n+ diodes under the action of a single 20μs forward current surge pulse has been studied experimentally up to current densities j≈100kA/cm2. The diode parameters are stable after a single surge pulse with current density j≈60kА/cm2, although the estimated temperature of the diode at the end of this pulse is ∼1650K. After several pulses of this amplitude or after subjecting the diode to pulses with higher current density, the diode degrades. The degradation is manifested in an irreversible decrease of the differential resistance of the diode under a high forward bias. Even a single 20μs pulse with peak current density j≈100kA/cm2 leads to total destruction of the device.

Forward current-voltage (I-V) characteristics and non-equilibrium carrier lifetime, τ were measured in 4H-SiC pin diodes (10-kV rated, 100 μm base width). The τ value was found to be 3.7 μs at room temperature by measurements of open circuit voltage decay. To the best of the authors' knowledge, the above lifetime value is the highest reported for 4H-SiC. The forward voltage drops were measured to be 3.44 V at current density of 100 A/cm2 and 5.45 V at 1000 A/cm2 showing a very deep modulation of the blocking base by injected carriers. Diodes operated well at elevated temperatures up to 400oC. No essential forward degradation was detected after 300- A×min current stress at 400oC.

Self-heating of high-voltage (10kV class) 4H-SiC rectifier p+–n–n+ diodes has been studied experimentally and theoretically in the dc mode. An analytical model is suggested, which allows calculation of non-isothermal current–voltage (I–V) characteristics in the dc mode from the known isothermal I–V characteristics. It is shown that, at the conventional substrate width (300–350μm) and relatively small diode diameter (400μm), the main contribution to the total thermal resistance comes from the thermal resistance of the substrate. It is noted that the contribution to the total thermal resistance from the blocking base, substrate, and interlayer between the substrate and an external heat sink is inversely proportional to the squared structure diameter a2. At the same time, the contribution from the external heat sink is inversely proportional to a. Hence, the relative contribution from the external heat sink increases with the working area, and at the common diameter of power diodes equal to 2–3mm, just the contribution form external heat sink may be the most important, especially at a comparatively thin substrate. The contact resistance and its temperature dependence contribute appreciably to dc characteristics.

Low frequency noise has been studied in forward biased 4H-SiC p(+)-n diodes at current densities from 10(-4) to 10 A/cm(2). At small current densities j <= 10(-3) A/cm(2), the spectral noise density S-I follows the law S-I proportional to 1/f(3/2). At 10(-3) A/cm(2) < j < 10(-2) A/cm(2), the generation-recombination (GR) noise predominates. The amplitude of this GR noise nonmonotonically depends on current. At j >= 10(-2) A/cm(2), the 1/f (flicker noise) dominates. It has been shown that the recombination time in the space charge region of the p(+)-n junction, tau(R), is about 70 ns. This value is approximately one order of magnitude larger than that reported earlier for SiC p-n structures. A model of GR noise in forward biased p-n junctions has been proposed. The model links the GR noise with fluctuations of the charge state of a trap in the space charge region. (c) 2006 American Institute of Physics.

The hole lifetime τp in the n-base and isothermal (pulse) current–voltage characteristics have been measured in 4H–SiC diodes with a 10kV blocking voltage (100μm base width). The τp value found from open circuit voltage decay (OCVD) measurements is 3.7μs at room temperature. To the best of the authors’ knowledge, the above value of τp is the highest reported for 4H–SiC. The forward voltage drops VF are 3.44V at current density j=100A/cm2 and 5.45V at j=1000A/cm2. A very deep modulation of the blocking base by injected non-equilibrium carriers has been demonstrated. Calculations in term of a simple semi-analytical model describe well the experimental results obtained.

For 1-kV, 30-A 4H-SiC epitaxial emitter npn bipolar junction transistors, the dependence of the common-emitter current gain β on the collector current IC were measured at elevated temperatures. The collector-emitter voltage was fixed (at 100 V voltage) to provide an active operation mode at all collector currents varying in a wide range from 150 mA to 40 A (current densities 24 - 6350 A/cm2). The maximum room temperature current gain was measured to be βmax = 40 (IC = 7 A) while βmax = 32 (IC = 10 A) at 250oC. The β-IC dependences were simulated using a model which takes into account the main processes affecting the current gain. Minority carrier lifetimes and surface recombination velocity were obtained by means of those considerations.

International Journal of High Speed Electronics and SystemsVol. 14, No. 01, pp. 1-19 (2004) MaterialsNo AccessMATERIALS PROPERTIES OF NITRIDES: SUMMARYSERGEY L. RUMYANTSEV, MICHAEL. S. SHUR, and MICHAEL E. LEVINSHTEINSERGEY L. RUMYANTSEVDepartment of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA, MICHAEL. S. SHURDepartment of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA, and MICHAEL E. LEVINSHTEINSolid State Electronics Division, The Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russiahttps://doi.org/10.1142/S012915640400220XCited by:16 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail References M. E. Levinshtein , S. L. Rumyantsev and M. S. Shur (eds.) , Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, and SiGe ( John Wiley and Sons , New York , 2001 ) . Google Scholar M. S. Shur , Introduction to Electronic Devices ( John Wiley and Sons , New York , 1996 ) . Google Scholar K. W. Boer , Survey of Semiconductor Physics. Electrons and Other Particles in Bulk Semiconductors ( Van Nostrand Reinhold , New York , 1990 ) . Crossref, Google Scholar R. E. Newnhams , Structure-Property Relations ( Springer-Verlag , New York , 1975 ) . Crossref, Google ScholarC. R. Aita, C. J. G. Kubiak and F. Y. H. 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We report on experimental study of the low frequency noise in GaN-based Field Effect Transistors. In both GaN Metal Semiconductor Field Effect Transistors (MESFETs) and AlGaN/GaN Heterostructure Field Effect Transistors (HFETs), the main noise sources are located in the channel. Gate voltage dependence of noise in MESFETs complies with the Hooge formula and indicates the bulk origin of noise. The dependencies of the Hooge parameter, α, on sheet electron concentration ns in HFETs are extracted from measured drain current fluctuations taking into account the contact resistance, and the resistance of the ungated regions of the transistors. At low channel concentrations α is inversely proportional to ns (α ~ 1/ns). This dependence as well as the temperature dependence of noise might be explained by electron tunneling from the 2D gas into the traps in the bulk GaN or AlGaN.