We present a novel CSPR controllable silicon photonic transmitter circuit based on a tunable power splitter for VSB self-coherent transmissions. 112 Gb/s 16 QAM over 80 km at a BER below 3.8 × 10 -3 has been achieved.

We propose and experimentally demonstrate a broadband polarization beam splitter on the silicon-on-insulator platform using the concept of multimode interference. The angle between the input waveguide and the multimode interferometer (MMI) was optimized in order to extract the images corresponding to the fundamental transverse electric (TE) and transverse magnetic (TM) polarizations from a single, compact MMI. By changing the direction of propagation, the input angle enabled the addition of a parallelepiped to facilitate exclusively TM collection above the MMI, therefore eliminating the need to cascade successive MMIs. The MMI was tapered to improve coupling at the ports. The design allowed for a compact geometry with a length of 67.5 μm and width of 4 μm, while maintaining a feature size comparable to the waveguide width. The design was experimentally characterized over 72 parameter variations, including input angle, output TM and TE port positions, and bend radius of the output TE waveguide. The performance was consistent over the 100 nm wavelength range of 1500-1600 nm, with an average insertion loss of 2 dB. The device maintained an extinction ratio of at least 13.96 and 11.45 dB in the C-band for the TE and TM polarizations, respectively.

We propose an ultra-broadband and ultra-compact optical 90° hybrid based on a subwavelength gratings dispersion-engineered 2×4 MMI coupler on silicon-on-insulator. Our device is only 41.3 μm in length, with an operating bandwidth over 150 nm.

We demonstrate 25-Gbit/s four-level pulse amplitude modulation transmission over 28-km standard single-mode fiber using an off-the-shelf 10-Gbit/s electro-absorption modulated laser and a 3 × 3 fiber splitter based simplified coherent receiver in the C-band. No digital signal processing and dispersion compensation have been used either at the transmitter or at the receiver. Furthermore, the use of...

The demand for photonic devices is increasingly pushing towards smaller size and higher efficiency. Silicon-on-Insulator (SOI) is a promising platform for photonic circuits due to its high refractive index and compatibility with complementary metaloxide-semiconductor (CMOS) technology. However, the inherent birefringence in SOI devices implies that they are sensitive to polarization, which introduces the need for polarization discrimination and conversion through devices such as rotators or splitters. These devices have become essential to the development of SOI based photonic circuits. This paper reports the development and characterization of an on-chip polarization splitter that is limited in geometric complexity so as to ensure its tolerance to fabrication variations. The splitter demonstrates an insertion loss of 0.82 dB for the TE0 mode and 1.56 dB for the TM0 mode over the telecommunication C-band wavelength range.

The linear electro-optic Pockels effect induces an effective refractive index change in noncentrosymmetric optical materials. Its subpicosecond response time and low energy requirement are attractive characteristics towards using this effect as a phase modulation scheme. This paper investigates the characteristics of a device that is capable of modulating the fundamental mode of two orthogonal polarizations separately and simultaneously. The device exploits both dimensions in the birefringent response of thermally poled Electro-Optic Polymers (EOP) when inducing a polarization dependent Pockels effect. A characterization of this behavior is carried out for a polymethylmethacrylate (PMMA) matrix with DR1 or CLD1 chromophores in a guest-host structure. This path offers improvements in energy consumption and speed due to the utilization of the Pockels effect, as well as added functionality from its incorporation of polarization-division multiplexing.