We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transition in the rare earth perovskite nickelates. In this, a canonical class of transition metal oxides, we study in particular two materials close to the T=0 metal-insulator transition: NdNiO3 , an antiferromagnetic insulator, and LaNiO3, a correlated metal. We measure a sharp gap in NdNiO3, which has an insulating ground state, of ~ 30 meV. Remarkably, metallic LaNiO3 exhibits a pseudogap of the same order that presages the metal insulator transition. The smallness of both the gap and pseudogap suggests they arise from a common origin: proximity to a quantum critical point at or near the T=0 metal-insulator transition. It also supports theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface.

The interplay of film stoichiometry and strain on the metal-insulator transition (MIT) and Hall coefficient of NdNiO3 films grown under different conditions is investigated. Unstrained lattice parameters and lattice mismatch strains are evaluated for films grown under a range of growth pressures and on different substrates. It is shown that both the temperature of the MIT and the Hall coefficient in the metallic phase are highly sensitive to film strain. In films grown with lower oxygen/total growth pressures, very large compressive in-plane strains can be obtained, which can act to suppress the MIT. Both the Hall coefficient and the temperature of the MIT are relatively insensitive to growth pressure, provided that films under the same strain are compared. The results support an itinerant picture of the transition that is controlled by the Ni eg bands, and that is relatively insensitive to changes in film stoichiometry.

We report on tunneling measurements that reveal the evolution of the quasiparticle state density in two rare earth perovskite nickelates, NdNiO3 and LaNiO3, that are close to a bandwidth controlled metal to insulator transition. We measure the opening of a sharp gap of ∼30 meV in NdNiO3 in its insulating ground state. LaNiO3, which remains a correlated metal at all practical temperatures, exhibits a pseudogap of the same order. The results point to both types of gaps arising from a common origin, namely, a quantum critical point associated with the T = 0 K metal-insulator transition. The results support theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface.

Resistances that exceed the Mott-Ioffe-Regel limit (known as bad metal behavior) and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. We establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype bandwidth-controlled metal-insulator transition. We show that resistance saturation is determined by the magnitude of Ni eg orbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to a non-Fermi liquid metal phase and provide a predictive criterion for Anderson localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices.

The Hall coefficient of epitaxial NdNiO3 films is evaluated in a wide range of temperatures, from the metallic into the insulating phase. It is shown that for temperatures for which metallic and insulating regions co-exist, the Hall coefficient must be corrected for the time-dependence in the longitudinal resistance, which is due to a slow evolution of metallic and insulating domains. The positive Hall and negative Seebeck coefficients, respectively, in the metallic phase are characteristic for two bands participating in the transport. The change in the sign of the Hall coefficient to negative values in the insulating phase is consistent with the suppression of the contribution from the large hole-like Fermi surface, i.e., the formation of a (pseudo)gap due to charge ordering.