Handling and storing the immense amounts of data native to the information age is a major challenge in terms of technological sustainability and energy demand. To date, tape storage remains the most widespread method for data archiving, while DNA data storage appears to offer the best data density and long-term stability in the future. However, DNA data storage is still in its infancy primarily due to economic and accessibility challenges. This emphasizes the need for more practical and readily available alternatives. We present a method for data storage utilizing inkjet printable quantum dots on paper with photoluminescence (PL) readout. Our proof of principle study showcases the ability to print and stack multiple bits of data on a single spot by exploiting the unique PL properties of quantum dots. This approach utilizes easily accessible resources, including a consumer-grade printer and paper as the substrate. Additionally, we perform initial stability tests, investigate scalability by controlling emission intensity, and evaluate the potential data density achievable by our approach.

The ongoing miniaturization of semiconductor devices renders charge‐carrier transport along interfaces increasingly important. The characteristic length scales in state‐of‐the‐art semiconductor technology span only a few nanometers. Consequently, charge‐carrier transport inevitably occurs directly at interfaces between adjacent layers rather than being confined to a single material. Herein, charge‐carrier diffusion is systematically studied in prototypical active layer systems, namely, in type‐I direct‐gap quantum wells and in type‐II heterostructures. The impact of internal interfaces is revealed in detail as charge‐carrier diffusion takes place much closer to or even across the internal interfaces in type‐II heterostructures. Type‐I quantum wells and type‐II heterostructures exhibit comparable diffusion rates given similar inhomogeneous exciton linewidths. Consequently, the changes in the structural quality of the interfaces are responsible for changes in diffusion and charge‐carrier transport along interfaces rather than the existence of the interfaces themselves.

Cubic nitrides are candidate materials for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV towards the mid infrared. This demands high-quality epitaxial growth of c-GaN as base material. We demonstrate the influence of pre-growth treatments and c- AlN buffer layers on the quality of c-GaN grown on 3C-SiC/Si substrates by molecular beam epitaxy (MBE). Optimized parameters yield extremely small surface roughness values below 1 nm of phase pure c-GaN layers with very limited stacking fault densities. Structural properties have been studied by X-ray diffraction and atomic force microscopy and surpasses the current standards, which allows for growth of more complex quantum structures for device application.

Cubic nitrides are candidate materials for next-generation optoelectronic applications as they possess no internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV toward the mid-infrared. Their successful application demands high-quality epitaxial growth of c-GaN as a base material. This infers a virtually perfect crystallinity as well as smooth surfaces and interfaces despite the limited availability of suitable substrate materials. Here, we systematically introduce pre-growth treatments and c-AlN buffer layers to optimize c-GaN epitaxial layers. Optimized growth parameters yield extremely small surface roughness values below 1 nm root mean square of phase pure c-GaN layers with very limited stacking fault densities as highlighted by scanning transmission electron microscopy. The crystallinity is monitored by X-ray diffraction and surpasses the current standards. We study the effects of the pre-growth procedures on the optical response by photoluminescence spectroscopy and reconfirm the high structural quality of the epitaxial layers. The combined optimization of all layer properties through the universally applicable approach allows for the growth of more complex quantum structures toward device applications.

The cubic, tetragonal, and orthorhombic phase of potassium niobate (KNbO3) are studied based on density-functional theory. Starting from the relaxed atomic geometries, we analyze the influence of self-energy corrections on the electronic band structure within the GW approximation. We find that quasiparticle shifts widen the direct (indirect) band gap by 1.21 (1.44), 1.58 (1.55), and 1.67 (1.64) eV for the cubic, tetragonal, and orthorhombic phase, respectively. By solving the Bethe-Salpeter equation, we obtain the linear dielectric function with excitonic and local-field effects, which turn out to be essential for good agreement with experimental data. From our results, we extract an exciton binding energy of 0.6, 0.5, and 0.5 eV for the cubic, tetragonal, and orthorhombic phase, respectively. Furthermore, we investigate the nonlinear second-harmonic generation (SHG) both theoretically and experimentally. The frequency-dependent second-order polarization tensor of orthorhombic KNbO3 is measured for incoming photon energies between 1.2 and 1.6 eV. In addition, calculations within the independent-(quasi) particle approximation are performed for the tetragonal and orthorhombic phase. The novel experimental data are in excellent agreement with the quasiparticle calculations and resolve persistent discrepancies between earlier experimental measurements and ab initio results reported in the literature.

In order to gain more information on the white-light generation by amorphous molecular materials, the influence of metal complex substituents on the photophysical properties of potential white-light emitters is investigated. Three compounds of the general type [{(R3P)(3)MSn}{PhSn}(3)S-6)], with R/M = Me/Au (1), Et/Ag (4), and Me/Cu (5), are produced by reactions of the organotin sulfide cluster [(PhSn)(4)S-6] (A) with the corresponding coinage metal complexes [M(PR3)(3)Cl]. Excess of the gold complex in the reaction leads to rearrangement and formation of [Au(PMe3)(4)][Au(PMe3)(2)][(PhSnCl)(3)S-4] (2). The use of PMe3 instead of PEt3 in the reaction with the silver salt causes decomposition and affords [(Me3P)(3)AgSnCl3] (3). All compounds are structurally characterized, and the necessity of sterically stabilizing PEt3 groups at the silver complex in 4 are rationalized by density functional theory (DFT) calculations. Measurements of the photophysical properties of 1, 4, and 5 show that the introduction of the metallo-ligands indeed affects the materials properties, and at the same time confirm that the reduction of the molecular symmetry alone is not a sufficient condition for white-light generation (WLG), which still requires amorphicity of the compound. This is realized for 1 and 4 in situ, while reabsorption processes inhibit WLG in case of the copper compound 5.

The cubic, tetragonal, and orthorhombic phase of potassium niobate (KNbO3) are studied based on densityfunctional theory. Starting from the relaxed atomic geometries, we analyze the influence of self-energy corrections on the electronic band structure within the GW approximation. We find that quasiparticle shifts widen the direct (indirect) band gap by 1.21 (1.44), 1.58 (1.55), and 1.67 (1.64) eV for the cubic, tetragonal, and orthorhombic phase, respectively. By solving the Bethe-Salpeter equation, we obtain the linear dielectric function with excitonic and local-field effects, which turn out to be essential for good agreement with experimental data. From our results, we extract an exciton binding energy of 0.6, 0.5, and 0.5 eV for the cubic, tetragonal, and orthorhombic phase, respectively. Furthermore, we investigate the nonlinear second-harmonic generation (SHG) both theoretically and experimentally. The frequency-dependent second-order polarization tensor of orthorhombic KNbO3 is measured for incoming photon energies between 1.2 and 1.6 eV. In addition, calculations within the independent-(quasi)particle approximation are performed for the tetragonal and orthorhombic phase. The novel experimental data are in excellent agreement with the quasiparticle calculations and resolve persistent discrepancies between earlier experimental measurements and ab initio results reported in the literature.