We report the design and performance of a unique parabolic focusing optics for a general purpose materials research station at the bending magnet BM20 (ROBL‐CRG) at ESRF. The measured gain between 8–12 keV was >1000, the focal spot <40 μm at a focal length of 235 mm (8 keV) and 244 mm (11.5 keV), respectively, which allows the use of special sample environments around the focus spot. The low divergence of <0.15° especially permits the in situ characterization of stress states in copper dual inlaid interconnect micro‐structures as well as the measurement of far‐field diffraction patterns of planar waveguides. First test results will be shown and the advantages of the parabolic focusing optics discussed.

We report the design of a sputter deposition chamber for the in situ study of film growth and modification by synchrotron x‐ray diffraction and reflectivity. The chamber is sealed with four Be‐windows allowing unhindered scattering access of −2 up to +50 degrees off‐plane and −2.9 up to +65 degrees in‐plane, respectively. The chamber fits into a standard six‐circle diffractometer from HUBER which is relatively widespread in synchrotron laboratories. Two commercial miniature magnetrons with additional gas inlets allow for the deposition of compound films and multilayers. Substrate heating up to 950°C and different substrate bias voltages are possible. An additional ion gun up to 6 keV and 10 μA allows post‐deposition ion irradiation with light atoms or energetic ion bombardment during sputter deposition. The performance of the chamber was tested with the deposition of MAX phase Ti2AlN and with the off‐sputtering of a thin Pt film.

The formation of crystalline SiC by implantation of C ions into silicon is not a single-step process. The implantation results in an elastic distortion of the Si matrix lattice and in the formation of crystalline SiC particles, depending on ion fluence and thermal conditions during implantation and postannealing. The growth of the SiC particles in the Si matrix was studied with various synchrotron x-ray scattering techniques and high-resolution transmission electron microscopy. Crystallites of the 3C–SiC polytype are formed in a buried layer. Three groups of crystallites with different orientation relative to the Si matrix are found: with a random orientation like in a powder material, with a fiber texture axis parallel to the surface normal, and completely aligned to the Si matrix lattice due to a partially coherent growth of SiC in the Si matrix. The thermal treatment favors the growth of highly oriented material: a higher implantation temperature is more efficient than a postimplantation treatment even at higher temperatures.

Implantation of C ions with an energy of 195 keV into Si wafers heated up to 800 °C results in an elastic distortion of the Si host lattice and in the formation of crystalline SiC particles or their prestages depending on implantation dose and temperature. Synchrotron x-ray diffraction at the Rossendorf beamline in Grenoble was used to reveal phase formation and the correlated lattice strain changes. Only a Si lattice deformation without growth of SiC was observed if the fluence did not exceed 5×1015 C ions/ cm2. After implantation of C ions up to 4×1017 cm−2 at a temperature of 500 °C, agglomerations of Si–C and an altered state of Si lattice deformation are found. By implantation of 4×1017 ions/cm2 at 800 °C, particles of the 3C–SiC (β-SiC) phase grow, which are aligned with the Si matrix. They are aligned in such a way with the Si matrix that the cubic crystallographic axes of matrix and particles coincide with an accuracy of 3°.