The electronic properties of solids are determined by their crystal structure and electron interactions, giving rise to phenomena such as superconductivity, strange metals and correlated insulators. Many of these effects remain poorly understood, motivating efforts to create artificial crystals that mimic real materials while allowing controlled tuning of key parameters. Cold atoms in optical lattices offer flexibility but cannot reproduce the long-range Coulomb interactions and hopping present in solids. Solid-state systems naturally support these features, although they suffer from tunability and flexibility issues. Here we demonstrate a highly tunable artificial crystal formed by superimposing a periodic electrostatic potential onto a two-dimensional electron gas in a shallow GaAs quantum well. This engineered lattice exhibits a band structure characteristic of the artificial triangular lattice, distinct from that of the underlying cubic crystal. Electronic transport measurements show a sign change in the Hall coefficient as the chemical potential sweeps through the artificial bands. The band structure can be continuously tuned to realize linear graphene-like and flat kagome-like bands within a single device. A strong insulating state emerges at half filling of the kagome flat band, consistent with interaction-driven behaviour. This tunability provides an opportunity to explore correlated quantum states in a controlled setting.

The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultra-shallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and specific to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned to form linear graphene-like and flat kagome-like bands in a single device. A strong insulating state is observed at half filling of the kagome flat band, which is not expected in the absence of strong interactions. This state, unique to the kagome lattice, is consistent with a loop-current Wigner insulator, which arises from long-range Coulomb interaction and delocalised electrons between neighbouring empty sites. The ability to continuously tune the bandstructure and access flat bands through electrical gating within a single device opens a new route to studying collective quantum states.

Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids, electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However, in the hydrodynamic regime, Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous “electron fluid.” The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it affects the resistance only through interactions with the sample boundaries, whose roughness not only is unknown but also varies from device to device. Here, we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive in both molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the random phase approximation.

A simple model has been suggested for describing self-organization of localized charges and quantum scattering in undoped GaAs/AlGaAs structures with 2D electron or hole gas created by applying respective gate bias. It has been assumed that these metal / dielectric / undoped semiconductor structures exhibit predominant carrier scattering at localized surface charges which can be located at any point of the plane imitating the GaAs / dielectric interface. The suggested model considers all these surface charges and respective image charges in metallic gate as a closed thermostated system. Electrostatic self-organization in this system has been studied numerically for thermodynamic equilibrium states using the Metropolis algorithm over a wide temperature range. We show that at T > 100 K a simple formula derived from the theory of single-component 2D plasma yields virtually the same behavior of structural factor at small wave numbers as the one given by the Metropolis algorithm. The scattering times of gate-induced carriers are described with formulas in which the structural factor characterizes frozen disorder in the system. The main contribution in these formulas is due to behavior of the structural factor at small wave numbers. Calculation using these formulas for the case of disorder corresponding to infinite T has yielded 2–3 times lower scattering times than experimentally obtained ones. We have found that the theory agrees with experiment at disorder freezing temperatures T ≈ 1000 K for 2D electron gas specimen and T ≈ 700 K for 2D hole gas specimen. These figures are the upper estimates of freezing temperature for test structures since the model ignores all the disorder factors except temperature.

Magnetotransport in two submicron-sized devices formed on the basis of GaAs/AlGaAs structures has been simulated using nonequilibrium Green functions. The effect of a perpendicular magnetic field on quantum transport in a quasi-one-dimensional quantum dot and in an Aharonov–Bohm interferometer has been analyzed in a single-particle approximation. Magnetic field oscillations of two-terminal conductance of the devices, equilibrium (persistent) current distributions and magnetic moment generated in the devices by persistent currents have been determined using numerical methods. Correlations between the magnetic moment, magnetic field oscillations of conductance and energy resonance in a specific magnetic field have been traced. Sufficiently regular conductance oscillations similar to Aharonov–Bohm ones have been revealed for a quasi-one-dimensional quantum dot at small magnetic fields (0.05–0.4 T). For a ring interferometer the contribution to the total equilibrium current and magnetic moment at a specific energy may change abruptly both in magnitude and in sign as a result of changing magnetic field within one Aharonov–Bohm oscillation. We show that the conductance of an interferometer is determined not by the number of modes propagating in the ring but rather by the effect of triangular quantum dots at the ring entrance that produce a strong reflection. The period of the calculated Aharonov–Bohm oscillations is in agreement with the measurement results for these devices.