High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate stack, consisting of a hexagonal boron nitride dielectric layer and a few-layer graphite gate electrode. We demonstrate this gating approach on MOVPE-grown InSb nanoribbons (NRs), a novel variant of the InSb nanowire, with a flattened cross-section. In our all-vdW gated NR devices we observe conductance features that are reproducible and have low- to near-zero gate hysteresis. We also report quantized conductance, which persists to lower magnetic fields and longer channel lengths than typical InSb nanowire devices reported to date. Additionally, we observe level splitting that is highly anisotropic in an applied magnetic field, which we attribute to the ribbon cross-section. The performance of our devices is consistent with the reduced disorder expected from the all-vdW gating scheme, and marks the first report of ballistic, few-modes quantum transport in a non-vdW material with an all-vdW gate. Our results establish all-vdW gating as a promising approach for high-quality gating of non-vdW materials for quantum transport, which is in principle applicable generically, beyond InSb systems. In addition, the work showcases the specific potential of all-vdW gate/InSb NR devices for enabling clean quantum devices that may be relevant for spintronics and topological superconductivity studies.

AbstractThin ferromagnetic films possessing perpendicular magnetic anisotropy derived from the crystal lattice can deliver the requisite magnetocrystalline anisotropy density for thermally stable magnetic memory and logic devices at the single-digit-nm lateral size. Here, we demonstrate that an epitaxial synthetic antiferromagnet can be formed from L10 FePd, a candidate material with large magnetocrystalline anisotropy energy, through insertion of an ultrathin Ir spacer. Tuning of the Ir spacer thickness leads to synthetic antiferromagnetically coupled FePd layers, with an interlayer exchange field upwards of 0.6 T combined with a perpendicular magnetic anisotropy energy of 0.95 MJ/m3 and a low Gilbert damping of 0.01. Temperature-dependent ferromagnetic resonance measurements show that the Gilbert damping is mostly insensitive to temperature over a range of 20 K up to 300 K. In FePd|Ir|FePd trilayers with lower interlayer exchange coupling, optic and acoustic dynamic ferromagnetic resonance modes are explored as a function of temperature. The ability to engineer low damping and large interlayer exchange coupling in FePd|Ir|FePd synthetic antiferromagnets with high perpendicular magnetic anisotropy could prove useful for high performance spintronic devices.

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO _x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

The non-local spin valve (NLSV) is a useful device for studying spin transport at nanoscopic dimensions, with potential technological applications. Despite this appeal, background signals, unrelated to spin diffusion, often hinder the interpretation of spin signals in NLSVs and could compromise performance in future devices. In this paper, we comprehensively investigate these background signals in all-metallic NLSVs fabricated from a variety of ferromagnetic (FM; Ni80Fe20, Fe, Co) and nonmagnetic (NM; Al, Cu) metals. We demonstrate that a background signal emerges in AC measurements, with contributions from both current spreading and thermoelectric effects, with a complex dependence on both temperature and FM injector-detector separation. Despite the complexity of these dependencies, we demonstrate excellent agreement with three-dimensional finite-element modelling that accounts for current-spreading and thermoelectric effects, across a wide range of temperatures, FM separations, and FM/NM pairings. This approach additionally offers a means to estimate the Seebeck coefficients for the tested FM/NM pairings, providing further insight into the charge and heat flow in such nanoscopic spintronic devices.

Acoustically driven ferromagnetic resonance (ADFMR) is a platform that enables efficient generation and detection of spin waves via magnetoelastic coupling with surface acoustic waves (SAWs). While previous studies successfully achieved ADFMR in ferromagnetic metals, there are only few reports on ADFMR in magnetic insulators such as yttrium iron garnet (Y3Fe5O12, YIG) despite more favorable spin wave properties, including low damping and long coherence length. The growth of high-quality YIG films for ADFMR devices is a major challenge due to poor lattice-matching and thermal degradation of the piezoelectric substrates during film crystallization. In this work, we demonstrate ADFMR of YIG thin films on LiNbO3 (LNO) substrates. We employed a SiOx buffer layer and rapid thermal annealing for crystallization of YIG films with minimal thermal degradation of LNO substrates. Optimized ADFMR device designs and time-gating measurements were used to enhance the ADFMR signal and overcome the intrinsically low magnetoelastic coupling of YIG. YIG films have a polycrystalline structure with an in-plane easy direction due to biaxial stresses induced during cooling after crystallization. The YIG device shows clear ADFMR patterns with maximum absorption for H ≈ 160 mT parallel to SAW propagation, which is consistent with our simulation results based on existing theoretical models. These results expand possibilities for developing efficient spin wave devices with magnetic insulators.

We have performed a time-resolved and phase-sensitive investigation of three-magnon scattering of ferromagnetic resonance (FMR) over several orders of magnitude in excitation power. We observe a regime that hosts transient oscillations of the FMR magnon population, despite higher-order magnon interactions at large powers. Also at high powers, the scattering generates $180^\circ$ phase shifts of the FMR magnons. These phase shifts correspond to reversals in the three-magnon scattering direction, between splitting and confluence. These scattering reversals are most directly observed after removing the microwave excitation, generating coherent oscillations of the FMR magnon population much larger than its steady-state value during the excitation. Our model is in strong agreement with these findings. These findings reveal the transient behavior of this three-magnon scattering process, and the nontrivial interplay between three-magnon scattering and the magnons' phases.

We present a first principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds, Ti2MnIn and Ni2MnIn, and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard U correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 mu(B) are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti2MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni2MnIn induces in the InAs. This is explained by the position of the transition metal d states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.

We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors.

We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 $\mu_B$ are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti$_2$MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni$_2$MnIn induces in the InAs. This is explained by the position of the transition metal $d$ states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.

We demonstrate the pumping of phonons by ferromagnetic resonance in a series of [Co(0.8 nm)/Pd(1.5 nm)]$_n$ multilayers ($n =$ 6, 11, 15, and 20) with large magnetostriction and perpendicular magnetic anisotropy. The effect is shown using broadband ferromagnetic resonance over a range of temperatures (10 to 300 K), where a resonant damping enhancement is observed at frequencies corresponding to standing wave phonons across the multilayer. The strength of this effect is enhanced by approximately a factor of 4 at 10 K compared to room temperature, which is anomalous in the sense that the temperature dependence of the magnetostriction predicts an enhancement that is less than a factor of 2. Lastly, we demonstrate that the damping enhancement is correlated with a shift in the ferromagnetic resonance field as predicted quantitatively from linear response theory.

We have measured the Seebeck and anomalous Nernst coefficients and corresponding transverse and longitudinal thermoelectric conductivities from 2 to 400 K in thin film (thickness t ??? 10 nm) Co2MnAlxSi1???x (0 x 1) and Co2FeAl grown by molecular beam epitaxy (MBE). A large (???14 A m???1 K???1 at 300 K) anomalous component of the transverse thermoelectric conductivity is observed in Co2MnAl, especially as contrasted to Co2MnSi (0.28 A m???1 K???1 at 300 K). This enhancement is likely due to Weyl points close to the Fermi level of Co2MnAl which disappear as x decreases.

The Elliott-Yafet theory of spin relaxation in nonmagnetic metals predicts proportionality between spin and momentum relaxation times for scattering centers such as phonons. Here, we test this theory in Al nanowires over a very large thickness range (8.5-300 nm), finding that the Elliott-Yafet proportionality "constant" for phonon scattering in fact exhibits a large, unanticipated finite-size effect. Supported by analytical and numerical modeling, we explain this via strong phonon-induced spin relaxation at surfaces and interfaces, driven in particular by enhanced spin-orbit coupling.

Spin-helical states, which arise in quasi-one-dimensional (1D) channels with spin-orbital (SO) coupling, underpin efforts to realize topologically-protected quantum bits based on Majorana modes in semiconductor nanowires. Detecting helical states is challenging due to non-idealities present in real devices. Here we show by means of tight-binding calculations that by using ferromagnetic contacts it is possible to detect helical modes with high sensitivity even in the presence of realistic device effects, such as quantum interference. This is possible because of the spin-selective transmission properties of helical modes. In addition, we show that spin-polarized contacts provide a unique path to investigate the spin texture and spin-momentum locking properties of helical states. Our results are of interest not only for the ongoing development of Majorana qubits, but also as for realizing possible spin-based quantum devices, such as quantum spin modulators and interconnects based on spin-helical channels.

We report an enhanced magnetoelastic contribution to the Gilbert damping in highly magnetostrictive Fe$_{0.7}$Ga$_{0.3}$ thin films. This effect is mitigated for perpendicular-to-plane fields, leading to a large anisotropy of the Gilbert damping in all of the films (up to a factor of 10 at room temperature). These claims are supported by broadband measurements of the ferromagnetic resonance linewidths over a range of temperatures (5 to 400 K), which serve to elucidate the effect of both the magnetostriction and phonon relaxation on the magnetoelastic Gilbert damping.

The nonlocal spin valve (NLSV) enables unambiguous study of spin transport, owing to its ability to isolate pure spin currents. A key principle of NLSV operation is that the "spin signal" is invariant under application of in-plane magnetic fields (above the ferromagnetic contact saturation field). Yet, for certain ferromagnet/normal metal pairings in NLSVs, an unexpected field enhancement of the spin signal occurs, presenting a challenge that has, thus far, been difficult to resolve with existing models. By correlating the extracted spin transport parameters with material, temperature, and field dependencies, in this work we identify field quenching of magnetic impurity scattering as the origin of this effect, confirmed by excellent agreement between our results and field-dependent Kondo theory. In addition to addressing this long-standing mystery, our findings highlight a potential systematic underestimation of spin transport parameters. By identifying signature field and temperature dependencies, we provide here a relatively simple means to isolate and quantify this additional relaxation mechanism.

The precise control of spins in semiconductor spintronic devices requires electrical means to generate spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly polarized optical pulses generate phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin packets, which are injected across an Fe/GaAs Schottky barrier into n-GaAs. By means of time-resolved Faraday rotation, we demonstrate phase coherence by the observation of multiple Larmor precession cycles for current pulse widths down to 500 ps at 17 K. We show that the current pulses are broadened by the charging and discharging time of the Schottky barrier. At high frequencies, the observable spin coherence is limited only by the finite bandwidth of the current pulses, which is of the order of 2 GHz. These results therefore demonstrate that all-electrical injection and phase control of electron spin packets at microwave frequencies is possible in metallic-ferromagnet-semiconductor heterostructures.

We report the experimental observation in thin films of the hybridization of the uniform ferromagnetic resonance mode with nonuniform magnons as a result of the two-magnon scattering mechanism, leading to a frequency-pulling effect on the ferromagnetic resonance. This effect, when not properly accounted for, leads to a discrepancy in the dependence of the ferromagnetic resonance field on frequency for different field orientations. The frequency-pulling effect is the complement of the broadening of the ferromagnetic resonance lineshape by two-magnon scattering and can be calculated using the same parameters. By accounting for the two-magnon frequency shifts through these means, consistency is achieved in fitting data from in-plane and perpendicular-to-plane resonance conditions.