In the past few years a new technique has been developed and optimized at Cameca to achieve the precise dose monitoring of ultra‐shallow implants thanks to Low Energy X‐Ray Emission Spectrometry. An instrument is now proposed, called Shallow Probe, for both Factory and Laboratory applications, allying high throughput (a few wafers per hour for full 300mm–200mm wafer mapping), high precision and stability (sub 1%) as well as high spatial resolution to address cheap‐size measurements (<60μm).

Electron-induced X-ray emission spectroscopy (EXES) combined with a semi-empirical electron scattering model, which describes the ionizations inside a material under electron irradiation, is used to determine the depth profile of shallow and ultra-shallow dopants in silicon. Two approaches are presented, depending on whether the shape of the profile is known or not. To test the method, X-ray intensities of implanted phosphorus atoms at various energies and doses in silicon are measured at a wide range of incident electron energies. From the experimental data combined with the model, the resulting profile parameters are determined. Comparison of secondary ion mass spectrometry and EXES associated with the electron scattering model shows that the proposed method is suitable for determining the shallow implant profiles with a depth resolution of one nanometer.

A technique using low energy x-ray emission spectroscopy (LEXES) is used to determine the dose of shallow implanted dopants. This technique is nondestructive and dopant selective. This technique can provide absolute dose values. CAMECA has developed specific instrumentation called the shallow probe which adapts the LEXES technique to the requirements of the semiconductor industry in terms of sensitivity and reproducibility of dose measurements. This work reports the performance of the shallow probe applied to a wide variety of boron, phosphorus, and arsenic implants into silicon wafers. Measured doses are compared to both ultralow energy secondary ion mass spectrometry and implanter tool values.

There has been increasing interest in using Indium (In+) as the channel and substrate dopant in place of the lighter boron atom. Indium is a heavier atom and hence yields a more controllable and steeper dopant profile, which is extremely important to reduce short channel effects (SCE) in modem MOSFETs. Studies have been done on using In as the channel dopant and devices with improved SCE have been reported. In+ has also been studied as a halo implant species to enhance the short channel performance of devices. However, indium shows enhanced diffusivity in the presence of some source of interstitials. To this effect, work has been done to study the diffusion of In in silicon under neutral and oxidizing ambients. In this paper, we study and present experimental results on the indium diffusion behavior and dose loss as a function of different damage structures and anneal conditions, utilizing low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) analysis techniques.

Experimental conditions and setting up of an electron microprobe is directly linked to the assumption or the knowledge that can make the operator on the results of the measurements. Consequently, there is an increasing interest in modelling the X-ray spectrum in order to predict accurately and rapidly the response of the microprobe when a sample of approximately known composition is submitted to specific excitation conditions. Even if the spectra simulation is a current tool proposed in EDS, it always remains a challenge to create a complete absolute WDS spectrum. Indeed, the definition of the efficiency function was a limit to the calculation of absolute intensities. In this work, we propose a new generation software for EPMA which uses the absolute simulation spectra to assist the operator in the choices of experimental conditions to achieve accurate measurements in a short time as well as to create new functionalities.

Abstract Analysis parameters for an electron microprobe are numerous, and the accuracy of the quantitative analysis is very sensitive to the selection of these experimental conditions. The expert system intends to optimize the choice of each analysis parameter as well as to automate the phases of a quantitative analysis on all kinds of materials. To summarise, the aim of the expert system is to simplify the procedures, improve the accuracy of results and control the analysis time. The figure 1 illustrates the various stages of the expert system. The starting point of the expert system is an interactive questionnaire concerning the sample,( ie, what is already known), and about the expectations on the analysis,( ie, the accuracy of the results and/or the duration of the analysis required by the operator). Then, the expert system performs a semi-quantitative analysis on the sample. Based on the acquisition of a wavelength qualitative spectrum, this method is a way to obtain the sample composition in a short time with the advantages of the WDS system, and with a reasonable accuracy.

The theoretical description of a quantitative electron probe model, IntriX, is presented. It consists of a numerical reconstruction of the in-depth ionization distribution Phi(rho z) through the use of basic physical macroscopic parameters describing the electron beam-matter interaction, With the aim of characterizing nanometer features in samples, specific attention is paid to the treatment of analysis performed on in-depth non-homogeneous samples (films on substrates) and also at low beam energies E-0 (E-0 < 5 keV) and near the ionization threshold E-c (E-0/E-c < 2). (C) 1998 John Wiley & Sons, Ltd.

The model called IntriX, designed bet interpret quantitatively electron probe analysis data, was tested via confrontations between its results and experimental or Monte Carlo data, These confrontations were established for in-depth ionization distributions Phi(rho z) and characteristic x-ray relative intensities in cases of homogeneous and stratified samples, and for wide ranges of incident beam energies (1.15 < E-0 < 30 keV) and overvoltages (1.3 < E-0/E-S < 10), Measurements are presented that allow the performance of IntriX to be tested in the low-energy range (E-0 < 5 keV). (C) 1998 John Wiley & Sons, Ltd.

The interaction between a nickel substrate and thin polyacrylonitrile films is studied by electron-induced x-ray emission spectroscopy (EXES), The analysis of the metal 3d distribution at the interface suggests that a direct interaction takes place between the metallic sites and the monomer molecules when the metal is cathodically polarized. The existence of bonds due to mixing of Ni 3d and C 2p states is shown, In contrast, there is no detectable interaction in the absence of polarization of the metallic surface.

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation T. P. Nguyen, M. Lapkowski, P. Jonnard, F. Vergand, P.‐F. Staub, C. Bonnelle, V. H. Tran; Study of the metallized poly(phenylene‐vinylene) film interface. AIP Conf. Proc. 30 January 1996; 354 (1): 327–333. https://doi.org/10.1063/1.49487 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search

We have studied the interfaces formed between poly(para-phenylene vinylene) (PPV) thin film and a Cr layer deposited under vacuum by thermal evaporation. Comparison of attenuated total reflection infrared spectra obtained in pristine and Cr-covered PPV films shows that new absorption bands emerge at 687, 1026 and 1392 cm−1 as a consequence of Cr deposition. The Cr(3d) valence distribution from electron-induced X-ray emission measurement on a Cr-covered PPV sample is shifted by 0.9 eV with respect to Cr metal. The new features found in both experiments are interpreted as characteristics of the compound in the polymer-Cr interface. In the case of PPV deposited on Cr no change is observed. Positioning the Fermi level relative to the Cr valence spectral distribution in both polymer-metal and metal-polymer interfaces from X-ray and X-ray photoelectron spectroscopy (XPS) analyses yields a possible explanation for the electrical behavior of the PPV-based diodes.

We describe an instrument designed for studying the electronic structure of bulk, surface, and deep solid–solid interface. The analysis is made by soft-x-ray emission spectroscopy induced by electron bombardment. The target is placed under ultrahigh vacuum and can be prepared and treated in situ. High resolution is achieved both as concerns the photon energy and the electron-beam energy. Tests have been made in the dispersive mode and in the characteristic isochromat mode. In both cases experimental resolution is in good agreement with the expected one.