We demonstrate significant improvement of the radiation immunity of the integrated circuits based on silicon bipolar transistors. Strong decrease of the current gain degradation and significant yield improvement after high-energy gamma irradiation are both shown. This was achieved by development of efficient hydrogenation process for the silicon bulk and the surface dielectric layer using electron cyclotron resonance (ECR) plasma, as well as implementation of effective Si-wafer gettering option. Keywords: integrated circuits, bipolar transistors, ECR-plasma, hydrogenation of semiconductor structures, trap state passivation, gettering of semiconductor wafers, γ-irradiation, radiation hardness, yield of workable transistors.

This paper presents the results of hydrogen electron-cyclotron resonance (ECR) plasma in microelectronics technology. Its effect on the radiation resistance of the IC and on the quality of the ohmic contact during the formation of UBM metallization is demonstrated. The devices obtained with the use of plasma ECR and without it are analyzed.

We demonstrate significant improvement of the radiation immunity of the integrated circuits based on silicon bipolar transistors. Strong decrease of the current gain degradation and significant yield improvement after high-energy gamma irradiation are both shown. This was achieved by development of efficient hydrogenation process for the silicon bulk and the surface dielectric layer using electron cyclotron resonance (ECR) plasma, as well as implementation of effective Si-plate gettering option.

A spiral phase plate with a topological charge of 1 is fabricated via 3D femtosecond laser submicron lithography. An optical scheme based on a Michelson interferometer is developed and assembled to check the vortex properties of a generated laser beam. Optical measurements confirm that the spiral phase plate generates an optical laser vortex with a normalized orbital angular momentum of | m | = 1. A technology for fabricating and testing spiral phase plates that transmit the required orbital angular momentum to the laser field is developed.

Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations in the HEMT's channel. The peculiarities of THz response of the detector in question including an enhanced noise-equivalent power were demonstrated.

THz response of AlGaAs/InGaAs/GaAs HEMT structure has been investigated. The structure consists of the serpentine chain of series connected HEMTs. The source of one is the drain for the subsequent transistor. Experiments have been showed THz response peculiarities of such structures and enhanced noise equivalent power.

Detection of terahertz radiation by GaAs transistor structures has been studied experimentally. The two types of samples under study included dense arrays of HEMTs and large-apertures detectors. Arrays consisted of parallel and series chains with asymmetric gate transistors for enhanced photoresponse on terahertz radiation. We investigated two types of wide-aperture detectors: grating gate detector, and single gate detector with bow-tie antenna. Wide-aperture detectors were symmetrical. Studies of transistor chains have shown that two essential features for this type of detector are the presence of asymmetry in the gate, and the type of connection between individual transistors themselves. Wide-aperture detectors have also been tested by narrow beams of terahertz radiation, which allows analyzing the role influence of individual parts of the detector for total sensitivity to terahertz excitation. The sensitivity and noise equivalent power of the detectors were evaluated.