CuO in nanocrystalline form (nano-CuO) was obtained by chemical route. These nano-CuO crystallites were incorporated in polyvinylidene fluoride (PVDF) to form nano-CuO/PVDF free-standing composite films containing varying amounts of nano-CuO by using sol-gel method. These films indicated ferromagnetism at room temperature. All the films were appropriately characterized. Magnetization was found to decrease with increase in temperature. The observed ferromagnetism in nano-CuO/PVDF samples could be due to possible interaction between magnon scatterings arising from the Cu2+ ions of nano-CuO particles when embedded in PVDF matrix which in turn would alter the electronic configuration of Cu ions for inducing ferromagnetic property in these films under study.

CuO films were deposited on fused silica substrates by using sol-gel method. Nanocrystalline nickel was incorporated in CuO in varying concentrations to form Ni:CuO films. Field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDAX), X-ray diffraction (XRD), and Raman spectroscopy measurements were carried out to characterize the films. X-ray photoelectron spectroscopy (XPS) studies indicated that Ni ions successfully substituted Cu in the CuO lattice. Superconducting quantum interface device (SQUID) measurements were carried out to measure the magnetization of the films which decreased with increase in temperature. Coercive field and residual magnetization in the Ni:CuO films were measured as a function of nickel content in the CuO films.

Glass/Cu/Cu2O/CuO/ZnO/Al-ZnO/Ag heterojunction solar cell structures have been successfully constructed by using a direct current magnetron sputtering technique. Photovoltaic (PV) solar cells fabricated as above indicated a conversion efficiency >5.6% and an open-circuit voltage (V-OC) similar to 0.57 V. Surface modification of CuO during ZnO deposition was identified as the limiting factor for obtaining higher performance heterojunction cells. Magnetron sputtering acted as a promising inexpensive and scalable technique for the fabrication of the above heterojunction for PV application. The diode quality factor for different cells fabricated here varied between 3.35 and 5.6 which were quite high (>2) compared to that for an ideal one. These are connected with mechanisms like interface recombination and tunneling enhanced interface recombination. Series resistance varied between 18.05 and 19.8 Omega cm(2) while shunt resistance varied between 495 and 524 Omega cm(2). The minority carrier life time similar to 7 ms suggested lower recombination losses in our cells culminating in higher short circuit current density compared to copper oxide based cells fabricated by others.

ABSTRACT Mn‐doped nanocrystalline ZnO (Mn x Zn 1– x O) was incorporated in the polyvinylidene fluoride thin film for obtaining the free‐standing flexible film by the sol–gel technique. The effect of Mn‐ZnO loading on the optical and microstructural properties of the Mn‐ZnO/polyvinylidene fluoride (PVDF) composite films was studied critically for the as‐deposited and the poled samples. X‐ray photoelectron spectroscopy (XPS) and Raman spectroscopy were carried out to study the bonding environment. The XPS spectra recorded for poled samples from the fluorine‐terminated surface showed a very strong peak at ∼695 eV for F1s arising due to C–F bonds. Raman studies showed the presence of the predominant β phase of PVDF in the sample. Peaks related to ZnO nanocrystals were also observed in the Raman spectra. Photoluminescence spectra indicated a strong emission band at ∼2.79 eV in the ultraviolet region arising out of near band edge emission of free excitons.

Cupric oxide (CuO) has been deposited onto glass and n-Si (1 0 0) substrate by sol-gel technique. pH of the sol and annealing temperature during film growth were found to be the key parameters for depositing the above film. Microstructural, optical and bonding environmental studies were performed on the above films. The grain sizes in these polycrystalline films varied between similar to 50 and 100 nm. Films were preferentially oriented in ( - 1 1 1) direction. Electrical and galvanomagnetic measurements indicated films to be predominantly p-type with carrier concentration value similar to 3.47 x 10(15)/cm(3) and mobility values similar to 4.475 cm(2)/Vs. A typical p-CuO/n-Si hetero-junction structure has been successfully fabricated with open circuit voltage (V-OC) similar to 359 my and shortcircuits current density (J(SC)) similar to 4.65 mA/cm(2), fill factor (FF) similar to 0.38 and efficiency (eta) similar to 1.05%.

Cupric oxide (CuO) thin films were synthesized by direct current (DC) reactive magnetron sputtering technique. This technique has proved to be a reproducible one. Ratios of Argon and oxygen gas in the plasma and the substrate temperature during deposition were found to be the key parameters for the formation of CuO polycrystalline films. Films were characterized by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, optical spectroscopy, photoluminescence, and Raman spectroscopy techniques. Grain sizes in these films varied between 120 and 220 nm. Films were found to be preferentially oriented in (002) direction. Predominant p-type conductivity in the CuO films was confirmed from Hall measurement. CuO/CdS p-n junction solar cell obtained with non-rationalized layer thicknesses showed an open circuit voltage (VOC) ∼421 mV, short circuit current density (JSC) ∼3.6 mA/cm2, Fill Factor (FF) ∼0.46 and efficiency (ɳ) ∼1.2%.

Synthesis of cuprous oxide (Cu2O) by direct current (DC) reactive magnetron sputtering technique has been demonstrated. Ar:O-2 gas ratios in the plasma and the substrate temperature were the decisive parameters for the formation of unblemished Cu2O polycrystalline films. The optimal deposition parameters are: Ar:O-2 similar to 90:10; T-s similar to 623 K and d.c. power similar to 0.6 kV at 1.2 mA/cm(2). Optical spectroscopy, photo luminescence, X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Raman measurements were carried out to characterize the films. Predominant p -type conductivity in the Cu2O films was confirmed from Hall measurement. (C) 2017 Elsevier Ltd. All rights reserved.

Silver nanoparticles were incorporated in between zinc oxide layers to realize ZnO/n-Ag/ZnO sandwich structure. Particle size and volume fraction of nanocrystalline silver particles were optimized to obtain a layer exhibiting a strong plasmonic peak even when embedded in ZnO sandwich structure. Strong surface plasmon resonance peak in the optical absorbance spectra was observed at ∼480 nm. Electrical conductivity in the temperature range of 10–200 K in the dark and when illuminated at 480 nm was studied to understand the transport processes associated with this material. The effect of surface plasmon resonance on the electron transport process was also specifically addressed in the metal–insulator–semiconductor (MIS) transition domain. The effect of additional density of states in the higher energy domain on the surface plasmon peak has been discussed and resulting broadening of the coulomb gap has been explained. Both the hopping energy (W OPT) and width of coulomb gap (Δ ES) increased in the plasmonic region.

Mn-doped nanocrystalline ZnO was incorporated in polyvinylidene fluoride thin films for obtaining freestanding flexible films by sol-gel technique. The as-deposited and the poled composite Mn-ZnO/PVDF films contained three different amount of Mn doping in ZnO nanocrystals as Zn1-xMnxO (x = 0.01, 0.03 and 0.05). X-ray photoelectron spectroscopy (XPS) and X-ray near edge absorption (XANES) measurements have been carried out to investigate the valence states of the host and the dopant ions in the samples while local environments surrounding them have been studied critically using extended X-ray absorption fine structure (EXAFS) measurements. Information on the local structure surrounding the Zn and Mn sites was obtained to throw a clear insight on the bonding environment in the Mn-ZnO/PVDF films. (C) 2015 Elsevier Ltd. All rights reserved.

•Pulsed laser ablation technique was successfully adopted to deposit polycrystalline boron antimonide films with assured stoichiometric composition.•The films were predominantly zinc blende structure with intense reflections from (111), (102) and (112) planes only.•SIMS studies indicated very uniform distribution of B and Sb in the whole bulk of the film.•XPS spectra indicated characteristic peaks at ∼34.87eV for Sb4d, ∼188.1eV for B1s, ∼529eV for overlapping Sb3d5/2: O1s, ∼765.5eV for Sb3p3/2, ∼539eV for Sb3d3/2 and ∼812.8eV for Sb3p1/2.•Raman spectra were dominated by a peak located at ∼151cm−1 followed by a peak at ∼64cm−1. The peak at ∼152cm−1 is closer to the Sb–LO mode. Two low-intensity Raman peaks located at ∼595cm−1 and 821cm−1 could also be observed in the Raman spectra.

Silver nanoparticles were embedded in zinc oxide matrix by using sputtering‐cum‐evaporation technique. Particle size and metal volume fraction were tailored by varying the amount of silver in the Al–ZnO matrix. Strong surface plasmon resonance peak in the optical absorbance spectra was observed at ∼500 nm. Electrical conductivity was measured in the temperature range of 80–220 K when illuminated at 500 nm, and in dark to explain the observed transport processes associated with this material.

Nanocrystalline Cadmium sulfide (CdS) impregnated polyvinylidene fluoride (PVDF) composite free-standing flexible films were prepared by sol–gel technique. The films were poled in vacuum under high electric field. Effect of CdS loading in PVDF host matrix on the optical properties was studied critically for the as-deposited and poled samples. The reduction in the relative intensities of the peaks arising out of α -PVDF as compared to that of β-PVDF for the poled samples was observed in X-ray diffraction (XRD) studies. This type of observation indicates a possible transition from α to β phase due to poling. Modulation of optical and microstructural properties with CdS loading was also addressed. Bonding environment was studied by X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared spectroscopy measurements. XPS studies indicated the presence of highly aligned CdS nanocrystallites in the poled PVDF matrix which may effectively modulate the piezoelectric behavior of the composite film. The Photoluminescence (PL) spectra recorded as above for a representative unpoled and poled nano-CdS/PVDF composite film.

Aluminum antimonide films (AlSb) were successfully deposited on glass substrates by ablating an aluminum antimonide target using pulsed Nd-YAG laser. Films deposited at substrate temperatures ~773K and above showed zinc blende structure. Increase in substrate temperature culminated in grain growth in the films. Photoluminescence studies indicated a strong peak ~725nm (~1.71eV) and ~803nm (~1.55eV). Films deposited at higher deposition temperatures indicated lower residual strain. Characteristic Raman peaks for AlSb at ~151cm−1 followed by two peaks located at ~71cm−1 and ~116cm−1 were also observed.

Diamond-like carbon films with embedded copper nanocrystallites were deposited on SnO2-coated glass substrates by using electrochemical technique. These composite films were subjected to sensing H2S gas. Change in the intensity of the characteristic surface plasmon resonance (SPR) peak was recorded with time, and it was observed that the SPR peak disappeared within a short time after exposure to hydrogen sulphide gas. Sensing mechanism was critically analysed.

This study endeavors to recognize handloom and powerloom products by means of proximal support vector machine (PSVM) using the features extracted from gray level images of both fabrics. A k-fold cross validation technique has been applied to assess the accuracy. The robustness, speed of execution, proven accuracy coupled with simplicity in algorithm hold the PSVM as a foremost classifier to recognize handloom and powerloom fabrics.

The effect of nano-Ag (n-Ag) plasmonic layer in InP/CdS solar cell structure was examined. An enhancement of short circuit current improving the overall cell efficiency was observed in InP/n-Ag/CdS cells. Location of the plasmonic layer in the above cell structure has been analyzed critically. The effect of introducing plasmonic layer on the overall performance of the cell has been studied in terms of the morphology, particle size distribution, optical absorption, I–V, C–V characteristics, and lifetime of the photo-generated carriers. Secondary ion mass spectroscopy (SIMS) studies were carried out for investigating possible interface alloying.

Purpose – The purpose of this paper is to give an approach for categorization of diverse textile designs using their textural features as extracted from their gray images by means of multi-class least-square support vector machines (LS-SVM). Design/methodology/approach – In this work, the authors endeavor to devise a pattern recognition system based on LS-SVM which performs a multi-class categorization of three basic woven designs namely plain, twill and sateen after analyzing their features. Findings – The result establishes that LS-SVM is able to classify the fabric design with a reasonable degree of accuracy and it outperforms the standard SVM. Originality/value – The algorithmic simplicity of LS-SVM resulting from replacement of inequality constraints by equality ones and ability of handling noisy data by accommodating an error variable in its algorithm make it eminently suitable for textile pattern recognition. This paper offers a maiden application of LS-SVM in textile pattern recognition.

Residual CdCl2 in chemical bath deposited (CBD) CdS layer was utilized to observe grain growth in CdTe layer for glass/SnO2/CBD-CdS/CdTe structures. The above as-deposited composite films were subjected to rapid thermal annealing (RTA) for observing grain growth and subsequent cell fabrication. The films were characterized by studying their microstructural and compositional properties. Interfacial mixing behavior was studied by secondary ion mass spectroscopy (SIMS) measurements which showed a slight interfacial diffusion of the CdS layer into the CdTe layer. Performance of a photovoltaic (PV) cell structure with non-optimized thickness of the CdTe and CdS layers obtained by this technique was studied. Carrier life time was obtained from Voc decay measurement. Photoinduced charge separation observed in this glass/SnO2/CBD–CdS/CdTe structure was associated with an increase in the dielectric constant and a decrease in the device resistance.

Residual CdCl2 in chemical bath deposited (CBD) CdS layer was utilized to observe grain growth in CdTe layer for glass/SnO2/CBD-CdS/CdTe structures. The above as-deposited composite films were subjected to rapid thermal annealing (RTA) for observing grain growth and subsequent cell fabrication. The films were characterized by studying their microstructural and compositional properties. Interfacial mixing behavior was studied by secondary ion mass spectroscopy (SIMS) measurements which showed a slight interfacial diffusion of the CdS layer into the CdTe layer. Performance of a photovoltaic (PV) cell structure with non-optimized thickness of the CdTe and CdS layers obtained by this technique was studied. Carrier life time was obtained from V-oc decay measurement. Photoinduced charge separation observed in this glass/SnO2/CBD-CdS/CdTe structure was associated with an increase in the dielectric constant and a decrease in the device resistance.