We present a two-dimensional polaritonic-based platform to perform electrical spectroscopy of polaritonic nanoresonators at mid and long-wave infrared range. We have demonstrated the geometrical and electrical tunability of these nanoresonators, which can achieve quality factors of up to ~200. Following this approach, we electrically detect the interactions between 2D polaritonic nanoresonators and vibrational modes of molecular thin layers at the nm scale. Finally, we show a sub-terahertz graphene receiver capable of detecting data streams with multigigabit/s data rate.
The requirements for broadband photodetection are becoming exceedingly demanding in hyperspectral imaging. Whilst intrinsic photoconductor arrays based on mercury cadmium telluride represent the most sensitive and suitable technology, their optical spectrum imposes a narrow spectral range with a sharp absorption edge that cuts their operation to < 25 um. Here, we demonstrate a giant ultra-broadband photoconductivity in twisted double bilayer graphene heterostructures spanning a spectral range of 2 - 100 um with internal quantum efficiencies ~ 40 % at speeds of 100 kHz. The giant response originates from unique properties of twist-decoupled heterostructures including pristine, crystal field induced terahertz band gaps, parallel photoactive channels, and strong photoconductivity enhancements caused by interlayer screening of electronic interactions by respective layers acting as sub-atomic spaced proximity screening gates. Our work demonstrates a rare instance of an intrinsic infrared-terahertz photoconductor that is complementary metal-oxide-semiconductor compatible and array integratable, and introduces twist-decoupled graphene heterostructures as a viable route for engineering gapped graphene photodetectors with 3D scalability.
The production of particle–antiparticle pairs in a vacuum — the Schwinger effect — requires extreme conditions that are out of reach of tabletop experiments. A mesoscopic simulation of this phenomenon has now been carried out in graphene devices.
In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy, whereas the filled bands underneath contribute little to conduction. Here, we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics that resemble those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common to all graphene-based superlattices.
Superconductors with nontrivial band structure topology represent a class of materials with unconventional and potentially useful properties. Recent years have seen much success in creating artificial hybrid structures exhibiting the main characteristics of 2D topological superconductors. Yet, bulk materials known to combine inherent superconductivity with nontrivial topology remain scarce, largely because distinguishing their central characteristic-the topological surface states-has proved challenging due to a dominant contribution from the superconducting bulk. In this work, a highly anomalous behavior of surface superconductivity in topologically nontrivial 3D superconductor In2 Bi, where the surface states result from its nontrivial band structure, itself a consequence of the non-symmorphic crystal symmetry and strong spin-orbit coupling, is reported. In contrast to smoothly decreasing diamagnetic susceptibility above the bulk critical field, Hc2 , as seen in conventional superconductors, a near-perfect, Meissner-like screening of low-frequency magnetic fields well above Hc2 is observed. The enhanced diamagnetism disappears at a new phase transition close to the critical field of surface superconductivity, Hc3 . Using theoretical modeling, the anomalous screening is shown to be consistent with modification of surface superconductivity by the topological surface states. The possibility of detecting signatures of the surface states using macroscopic magnetization provides a new tool for the discovery and identification of topological superconductors.
Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high currents: (i) a “Doppler-like” shift and splitting of the frequencies of the transverse acoustic (TA) phonons emitted when the electrons undergo inter -Landau level (LL) transitions; (ii) an intra -LL Mach effect with the emission of TA phonons when the electrons approach supersonic speed, and (iii) the onset of elastic inter-LL transitions at a critical carrier drift velocity, analogous to the superfluid Landau velocity. All three quantum phenomena can be unified in a single resonance equation. They offer avenues for research on out-of-equilibrium phenomena in other two-dimensional fermion systems.
Magnetic fields force ballistic electrons injected from a narrow contact to move along skipping orbits and form caustics. This leads to pronounced resistance peaks at nearby voltage probes as electrons are effectively focused inside them, a phenomenon known as magnetic focusing. This can be used not only for the demonstration of ballistic transport but also to study the electronic structure of metals. Here, we use magnetic focusing to probe narrowbands in graphene bilayers twisted at ~2°. Their minibands are found to support long-range ballistic transport limited at low temperatures by intrinsic electron-electron scattering. A voltage bias between the layers causes strong minivalley splitting and allows selective focusing for different minivalleys, which is of interest for using this degree of freedom in frequently discussed valleytronics.
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small ("marginal") twist angles of 0.1 deg, BLG has been shown to exhibit a strain-accompanied reconstruction that results in submicron-size triangular domains with the Bernal stacking. If the interlayer bias is applied to open an energy gap inside the domain regions making them insulating, marginally-twisted BLG is predicted to remain conductive due to a triangular network of chiral one-dimensional (1D) states hosted by domain boundaries. Here we study electron transport through this network and report giant Aharonov-Bohm oscillations persisting to temperatures above 100 K. At liquid helium temperatures, the network resistivity exhibits another kind of oscillations that appear as a function of carrier density and are accompanied by a sign-changing Hall effect. The latter are attributed to consecutive population of the flat minibands formed by the 2D network of 1D states inside the gap. Our work shows that marginally twisted BLG is markedly distinct from other 2D electronic systems, including BLG at larger twist angles, and offers a fascinating venue for further research.
Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, most experiments are limited to devices that have lateral dimensions of only a few micrometres. Here, we perform magnetotransport measurements on graphene/hexagonal boron-nitride Hall bars and show that wider devices reveal additional quantum effects. In devices wider than ten micrometres we observe distinct magnetoresistance oscillations that are caused by resonant scattering of Landau-quantised Dirac electrons by acoustic phonons in graphene. The study allows us to accurately determine graphene’s low energy phonon dispersion curves and shows that transverse acoustic modes cause most of phonon scattering. Our work highlights the crucial importance of device width when probing quantum effects and also demonstrates a precise, spectroscopic method for studying electron-phonon interactions in van der Waals heterostructures.
Recently observed magnetophonon resonances in the magnetoresistance of graphene are investigated using the Kubo formalism. This analysis provides a quantitative fit to the experimental data over a wide range of carrier densities. It demonstrates the predominance of carrier scattering by low energy transverse acoustic (TA) mode phonons: the magnetophonon resonance amplitude is significantly stronger for the TA modes than for the longitudinal acoustic (LA) modes. We demonstrate that the LA and TA phonon speeds and the electron-phonon coupling strengths determined from the magnetophonon resonance measurements also provide an excellent fit to the measured dependence of the resistivity at zero magnetic field over a temperature range of 4-150 K. A semiclassical description of magnetophonon resonance in graphene is shown to provide a simple physical explanation for the dependence of the magneto-oscillation period on carrier density. The correspondence between the quantum calculation and the semiclassical model is discussed.
An electrical conductor subjected to a magnetic field exhibits the Hall effect in the presence of current flow. Here, we report a qualitative deviation from the standard behavior in electron systems with high viscosity. We found that the viscous electron fluid in graphene responds to nonquantizing magnetic fields by producing an electric field opposite to that generated by the ordinary Hall effect. The viscous contribution is substantial and identified by studying local voltages that arise in the vicinity of current-injecting contacts. We analyzed the anomaly over a wide range of temperatures and carrier densities and extracted the Hall viscosity, a dissipationless transport coefficient that was long identified theoretically but remained elusive in experiments.
Graphene superlattices were shown to exhibit high-temperature quantum oscillations due to periodic emergence of delocalized Bloch states in high magnetic fields such that unit fractions of the flux quantum pierce a superlattice unit cell. Under these conditions, semiclassical electron trajectories become straight again, similar to the case of zero magnetic field. Here, we report magnetotransport measurements that reveal second-, third-, and fourth-order magnetic Bloch states at high electron densities and temperatures above 100 K. The recurrence of these states creates a fractal pattern intimately related to the origin of Hofstadter butterflies. The hierarchy of the fractal states is determined by the width of magnetic minibands, in qualitative agreement with our band-structure calculations.
Umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals. However, umklapp scattering has proven to be elusive in experiment as it is easily obscured by other dissipation mechanisms. Here we show that electron-electron umklapp scattering dominates the transport properties of graphene-on-boron-nitride superlattices over a wide range of temperatures and carrier densities. The umklapp processes cause giant excess resistivity that rapidly increases with increasing the superlattice period and are responsible for deterioration of the room-temperature mobility by more than an order of magnitude as compared to standard, non-superlattice graphene devices. The umklapp scattering exhibits a quadratic temperature dependence accompanied by a pronounced electron-hole asymmetry with the effect being much stronger for holes rather than electrons. Aside from fundamental interest, our results have direct implications for design of possible electronic devices based on heterostructures featuring superlattices.
Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene superlattices support a different type of quantum oscillation that does not rely on Landau quantization. The oscillations are extremely robust and persist well above room temperature in magnetic fields of only a few tesla. We attribute this phenomenon to repetitive changes in the electronic structure of superlattices such that charge carriers experience effectively no magnetic field at simple fractions of the flux quantum per superlattice unit cell. Our work hints at unexplored physics in Hofstadter butterfly systems at high temperatures.
Electron-electron (e-e) collisions can impact transport in a variety of surprising and sometimes counterintuitive ways. Despite strong interest, experiments on the subject proved challenging because of the simultaneous presence of different scattering mechanisms that suppress or obscure consequences of e-e scattering. Only recently, sufficiently clean electron systems with transport dominated by e-e collisions have become available, showing behavior characteristic of highly viscous fluids. Here we study electron transport through graphene constrictions and show that their conductance below 150 K increases with increasing temperature, in stark contrast to the metallic character of doped graphene. Notably, the measured conductance exceeds the maximum conductance possible for free electrons. This anomalous behavior is attributed to collective movement of interacting electrons, which 'shields' individual carriers from momentum loss at sample boundaries. The measurements allow us to identify the conductance contribution arising due to electron viscosity and determine its temperature dependence. Besides fundamental interest, our work shows that viscous effects can facilitate high-mobility transport at elevated temperatures, a potentially useful behavior for designing graphene-based devices.
Ultraclean graphene sheets encapsulated between hexagonal boron nitride crystals host two-dimensional electron systems in which low-temperature transport is solely limited by the sample size. We revisit the theoretical problem of carrying out microscopic calculations of nonlocal ballistic transport in such micron-scale devices. By employing the Landauer-Buttiker scattering theory, we propose a scaling approach to tight-binding nonlocal transport in realistic graphene devices. We test our numerical method against experimental data on transverse magnetic focusing (TMF), a textbook example of nonlocal ballistic transport in the presence of a transverse magnetic field. This comparison enables a clear physical interpretation of all the observed features of the TMF signal, including its oscillating sign.
Graphene hosts a unique electron system in which electron-phonon scattering is extremely weak but electron-electron collisions are sufficiently frequent to provide local equilibrium above liquid nitrogen temperature. Under these conditions, electrons can behave as a viscous liquid and exhibit hydrodynamic phenomena similar to classical liquids. Here we report strong evidence for this transport regime. We find that doped graphene exhibits an anomalous (negative) voltage drop near current injection contacts, which is attributed to the formation of submicrometer-size whirlpools in the electron flow. The viscosity of graphene's electron liquid is found to be ~0.1 m$^2$ /s, an order of magnitude larger than that of honey, in agreement with many-body theory. Our work shows a possibility to study electron hydrodynamics using high quality graphene.