Quantum sensing and quantum communication systems rely on high-performance single- or entangled-photon sources and single-photon detectors enabling experiments based on the quantum nature of single photons. In this contribution, we discuss the development of an entangled-photon source delivering entangled photon pairs with wavelengths of about 1550 nm alongside with single-photon avalanche detectors (SPADs) for the short-wave infrared (SWIR) and for the extended SWIR (eSWIR) spectral range. The fabrication processes of such quantum-enabling technologies is highlighted. The entangled-photon source is based on AlGaAs Bragg-reflection waveguides. Very low difference in effective refractive index of TE and TM polarized photons - important for high polarization entanglement without external compensation - as well as high single and coincidence count rates were achieved. For the fabrication of InGaAs/InP SWIR SPADs, the key technology is the planar process technology via zinc diffusion to produce spatially confined p-type regions. For the zinc-diffusion process, a novel method of selective epitaxial overgrowth was developed, achieving the intended double-well diffusion profile. Experimental data of thus fabricated InGaAs/InP SPADs show the expected dark-current, photo-current, and multiplication-gain characteristics in linear-mode operation as well as breakthrough behavior in Geiger-mode operation at 240 K, which is a typical operating temperature for InGaAs/InP SPADs achievable by thermoelectric cooling. GaSb-based SPADs for the eSWIR are fabricated in a mesa approach showing the expected dark current behavior as well. All three different devices are linked by enabling quantum technologies in the (e)SWIR as well as by using our III/V-semiconductor technology facilities.

Through the choice of appropriate layer thicknesses, the bandgap of InAs/Ga(As)Sb type II superlattices (T2SLs) can be engineered in a wide range covering the mid-wavelength and long-wavelength infrared (MWIR, 3 μm - 5 μm and LWIR, 8 μm - 12 μm) spectral regions. Using this material system, Fraunhofer IAF develops bi-spectral MWIR image sensors based on homojunction photodiodes for missile warning applications and pursues modern heterojunction approaches as well as heteroepitaxial growth of T2SLs on GaAs. We discuss topics arising from efforts to improve the manufacturability of our bi-spectral arrays and report on the progress of the integration with MWIR heterojunction designs that exhibit reduced dark currents.

We present a modelling study regarding the impact of metastructures on the quantum efficiency (QE) of long-wavelength infrared (LWIR; 8-12 mu m) InAs/GaSb type-II superlattice (T2SL) detectors. The approach is based on finite-element-method modeling of the electric-field distribution in the detector volume and deducing the QE. The optimization procedure consists of identification of a best-adaptive absorber thickness for a topside gold-coated photodiode, iterative optimization of the metastructure parameters, and adoption of a suitable anti-reflection coating. The modeling results indicate the potential to increase the average integrated QE for a 2.1-mu m thick absorber layer from 35% to 73%, which corresponds to an improvement of 108%. For a detector with a thinner absorber of 0.9 mu m, the average integrated QE improves from 21% to 59%, which corresponds to an increase of 180%. With this case study, we demonstrate the overall potential of employing metastructures for QE enhancement in LWIR T2SL detectors.

In this work, internal 4T1→6A1 transitions within the half-filled 3d shell of Fe3+ in extremely pure chemical vapor deposition (CVD)-grown ZnO layers were investigated by means of high-resolution, low-temperature continuous wave (cw) photoluminescence (PL), time-resolved PL, photoluminescence excitation (PLE) spectroscopy, Zeeman spectroscopy, and deep level transient spectroscopy (DLTS). For comparison, Zeeman spectroscopy measurements were also performed on commercially available, hydrothermally grown ZnO bulk crystals. Magnetic fields up to 15T were applied parallel and perpendicular to the c-axis of the ZnO crystals in order to investigate the fine structure of included states. The splitting pattern of emission lines related to 4T1→6A1 Fe3+ transitions was theoretically modeled by a Hamiltonian matrix including the crystal field in cubic and trigonal symmetries and spin–orbit interaction for the complete excited 4T1 state. The extremely pure ZnO used in this study, in direct comparison to hydrothermally grown ZnO, allows the identification, investigation, and description of single isolated Fe3+ defects in ZnO for the first time—different from literature reports hitherto, which seemingly were recording data on Fe–Li complexes. The resulting exact energy-level scheme in combination with the experimental data leads to a re-evaluation of 4T1→6A1 Fe3+ transitions in ZnO.

In this work, we report on three new extremely sharp emission lines in zinc oxide (ZnO) related to iron–lithium complexes. The identification is based on a comparison of hydrothermally grown ZnO with high lithium concentration and a lithium-free sample grown by methane based chemical vapor deposition, which both were implanted with iron. After annealing in a mixed oxygen/argon atmosphere at 800°C, the lithium-free sample showed no additional lines besides the well-known emission at 693nm (1.78734eV), whereas the hydrothermally grown sample emitted three intense and sharp lines in photoluminescence (PL) spectroscopy. These emission lines at 705nm (1.75873eV), 712nm (1.74153eV), and 732nm (1.69283eV) were characterized by temperature dependent high resolution continuous wave (cw) and time-resolved PL spectroscopy, as well as by photoluminescence excitation spectroscopy, and are assigned to different Fe–Li complexes. We find a single thermally activated excited state for each of the complex emission lines, different from the 4T1→6A1 transition of Fe3+ with its at least three excited states. While time-resolved photoluminescence measurements of the Fe3+ transition show a lifetime of 24.9±0.5ms, we find a reduced lifetime of 8.5±1ms for the new zero phonon lines, pointing to stronger mixture of the Fe 3d states with surrounding p-orbitals.

This work presents a H2S selective resistive gas sensor design based on a chemical field effect transistor (ChemFET) with open gate formed by hundreds of high temperature chemical vapour deposition (CVD) grown zinc oxide nanowires (ZnO NW). The sensing ability of pristine ZnO NWs and surface functionalized ZnO NWs for H2S is analysed systematically. ZnO NWs are functionalized by deposition of discontinuous gold (Au) nanoparticle films of different thicknesses of catalyst layer ranging from 1 to 10 nm and are compared in their gas sensing properties. All experiments were performed in a temperature stabilized small volume compartment with adjustable gas mixture at room temperature. The results allow for a well-founded understanding of signal-to-noise ratio, enhanced response, and improved limit of detection due to the Au functionalisation. Comprehension and controlled application of the beneficial effects of Au catalyst on ZnO NWs allow for the detection of very low H2S concentrations down to 10 ppb, and a theoretically estimated 500 ppt in synthetic air at room temperature.

We investigate the influence of different types of template micro-patterning on defect reduction and optical properties of non-polar GaN using detailed luminescence studies. Non-polar (11 (2) over bar0) (or a-plane) GaN exhibits a range of different extended defects compared with its more commonly used c-plane counterpart. In order to reduce the number of defects and investigate their impact on luminescence uniformity, non-polar GaN was overgrown on four different GaN microstructures. The micro-patterned structures consist of a regular microrod array; a microrod array where the-c-side of the microrods has been etched to suppress defect generation; etched periodic stripes and finally a subsequent combination of etched stripes and etched microrods (double overgrowth). Overall the presence of extended defects, namely threading dislocations and stacking faults (SFs) is greatly reduced for the two samples containing stripes compared with the two microrod samples. This is evidenced by more uniform emission and reduction in dark regions of non-radiative recombination in room temperature cathodoluminescence imaging as well as a reduction of the SF emission line in low temperature photoluminescence. The observed energy shifts of the GaN near band edge emission are related to anisotropic strain relaxation occurring during the overgrowth on these microstructures. A combination of stripes and microrods is a promising approach for defect reduction and emission uniformity in non-polar GaN for applications in light-emitting devices as well as power electronics.

The growth of single-crystalline high-quality zinc oxide (ZnO) layers by a methane (CH4)-based chemical vapor deposition (CVD) growth process on sapphire substrates with an aluminum nitride (AlN) nucleation layer was investigated. We achieved monocrystalline ZnO layers free of rotational domains, which show in high-resolution X-ray diffraction (HRXRD) measurements a very narrow (similar to 110 arcsec) full width at halfmaximum (fwhm) in. scans for the ZnO (0002) reflection. The influence of growth time and layer thickness on crystal properties such as surface roughness, dislocation density, and optical properties was investigated. We find low edge and screw dislocation densities of around 6.4 x 10(8) and 2.1 x 10(7) cm(-2), respectively. In low-temperature photoluminescence (PL) spectra the fwhm of the donor-bound exciton emission drops to about 170 mu eV for increasing layer thickness. Moreover, these layers have a smooth surface with a surface roughness RMS value of 4 nm and a very low donor concentration of about 1.7 x 10(15) cm(-3). We also studied the influence of substrate miscut on crystal growth properties and found no significant influence. The results prove the high potential of methane-based chemical vapor deposition for the production of high-quality ZnO layers.

We investigate the influence of different types of template micro-patterning on defect reduction and optical properties of non-polar GaN using detailed luminescence studies. Non-polar ( 11 2 ˉ 0 ) (or a -plane) GaN exhibits a range of different extended defects compared with its more commonly used c -plane counterpart. In order to reduce the number of defects and investigate their impact on luminescence uniformity, non-polar GaN was overgrown on four different GaN microstructures. The micro-patterned structures consist of a regular microrod array; a microrod array where the − c -side of the microrods has been etched to suppress defect generation; etched periodic stripes and finally a subsequent combination of etched stripes and etched microrods (double overgrowth). Overall the presence of extended defects, namely threading dislocations and stacking faults (SFs) is greatly reduced for the two samples containing stripes compared with the two microrod samples. This is evidenced by more uniform emission and reduction in dark regions of non-radiative recombination in room temperature cathodoluminescence imaging as well as a reduction of the SF emission line in low temperature photoluminescence. The observed energy shifts of the GaN near band edge emission are related to anisotropic strain relaxation occurring during the overgrowth on these microstructures. A combination of stripes and microrods is a promising approach for defect reduction and emission uniformity in non-polar GaN for applications in light-emitting devices as well as power electronics.

In this work, we report on the innovative growth of semipolar “bow-tie”-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs) and their structural and luminescence characterization. We investigate the impact of growth on patterned (113) Si substrates, which results in the bow-tie cross section with upper surfaces having the (101¯1) orientation. Room temperature cathodoluminescence (CL) hyperspectral imaging reveals two types of extended defects: black spots appearing in intensity images of the GaN near band edge emission and dark lines running parallel in the direction of the Si stripes in MQW intensity images. Electron channeling contrast imaging (ECCI) identifies the black spots as threading dislocations propagating to the inclined (101¯1) surfaces. Line defects in ECCI, propagating in the [12¯10] direction parallel to the Si stripes, are attributed to misfit dislocations (MDs) introduced by glide in the basal (0001) planes at the interfaces of the MQW structure. Identification of these line defects as MDs within the MQWs is only possible because they are revealed as dark lines in the MQW CL intensity images, but not in the GaN intensity images. Low temperature CL spectra exhibit additional emission lines at energies below the GaN bound exciton emission line. These emission lines only appear at the edge or the center of the structures where two (0001) growth fronts meet and coalesce (join of the bow-tie). They are most likely related to basal-plane or prismatic stacking faults or partial dislocations at the GaN/Si interface and the coalescence region.

The growth of high-quality single-crystalline zinc oxide (ZnO) layers on silicon (Si(111)) substrates with an intermediate aluminum nitride (AlN) nucleation layer was investigated. The ZnO layers were grown using a methane (CH4)-based chemical vapor deposition (CVD) growth process, while the AlN nucleation layers were grown by metal-organic vapor-phase epitaxy (MOVPE). We investigate the influence of nucleation layer thickness and growth temperature on the final ZnO layer quality and also vary the ZnO growth parameters to obtain smooth surfaces and the best crystal quality. The ZnO layers were extensively characterized by various methods such as atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), electron backscatter diffraction (EBSD), and scanning/transmission electron microscopy (SEM/TEM). We find that AlN nucleation layers grown at 1150 degrees C for 15 min yielded the best final ZnO layer quality with fully c oriented ZnO layers free of rotational domains. In HRXRD omega scans full width of half maximum (fwhm) values of about 710 and 1240 arcsec for the (0002) and (10 (1) over bar2) reflections, respectively, were achieved. Dislocation densities of rho(edge) = 1.6 x 10(10) and rho(screw) = 9.1 x 10(8) cm(-2) and a lateral coherence length (LCL) of L-parallel to = 300 nm are deduced, values which are among the best reported in the literature for ZnO layers grown on Si(111). Additionally, we carried out high-resolution photoluminescence (PL) measurements at liquid-helium and room temperatures, which also prove low defect densities. The low-temperature PL spectra were also used to study the stress within the ZnO layer and compared to HRXRD stress measurements. Both measurements confirm a stress reduction in the ZnO layer with increasing thickness.

We report on the development of thermoelectrically cooled (TE-cooled) InAs/GaSb type-II superlattice (T2SL) single element infrared (IR) photodetectors and exemplify their applicability for real-time IR spectroscopy in the mid-infrared in a possible application. As the European Union’s Restriction of Hazardous Substances (RoHS) threatens the usage of the state-of-the-art detector material mercury cadmium telluride (MCT), RoHS-compatible alternatives to MCT have to be established for IR detection. We use bandgap engineered InAs/GaSb T2SLs to tailor the temperature-dependent bandgap energy for detection throughout the required spectral range. Molecular beam epitaxy of superlattice samples is performed on GaAs substrates with a metamorphic GaAsSb buffer layer. Photolithographic processing yields laterally-operated T2SL photodetectors. Integrated in a TE-cooled IR detector module, such T2SL photodetectors can be an alternative to MCT photodetectors for spectroscopy applications. Here, we exemplify this by exchanging a commercially available MCT-based IR detector module with our T2SL-based IR detector module in a real-time mid-infrared backscattering spectroscopy system for substance identification. The key detector requirements imposed by the spectroscopy system are a MHz-bandwidth, a broad spectral response, and a high signal-to-noise ratio, all of which are covered by the reported T2SL-based IR detector module. Hence, in this paper, we demonstrate the versatility of TE-cooled InAs/GaSb T2SL photodetectors and their applicability in an IR spectroscopy system.

Herein, the impact of high‐temperature (HT) annealing on the crystalline structure of metal organic vapor phase epitaxy (MOVPE)‐grown boron‐containing AlN layers is investigated. High‐resolution X‐ray diffraction studies reveal AlBN in the wurtzite configuration for nonannealed 300 nm‐thick layers containing several percent of boron. After 3 h of annealing at 1700 °C, the AlBN‐related reflex is weakened, showing a strong impact of the HT treatment on the crystalline structure of this material. After annealing, high‐resolution transmission electron microscopy micrographs reveal grain formation with moiré patterns, giving strong evidence of different crystal phases or orientations, alongside well‐oriented wurtzite regions. High‐angle annular dark‐field (HAADF) imaging and electron energy loss spectroscopy indicate stronger compositional inhomogeneities for the annealed sample in comparison with the as‐grown layer, most likely related to phase separation between AlN and BN. In addition, a significant diffusion of B out of the surface region is observed. AlBN with about ten times a lower boron content, for which defect propagation from the AlN template into the AlBN layer is visible, shows a much more homogeneous contrast in HAADF investigations after annealing, although the formation of granular structures is still observed.

Using a new high-temperature chemical vapor deposition (CVD)-based growth process for high-quality zinc oxide (ZnO) layers, the initial stages for heteroepitaxial growth on sapphire substrates with an aluminum nitride nucleation layer was investigated. A series of samples were grown with various supplies of zinc vapor, which can easily be controlled by the amount of the precursor gas methane (CH4) used to reduce the ZnO powder. In the substrate region, the zinc vapor was reoxidized by pure oxygen, which initially led to the formation of ZnO islands on the substrate, and for longer growth duration to the desired highly crystalline ZnO layers. To determine the details about this initial layer formation process, atomic force microscopy and scanning electron microscopy were used. We find that the ZnO microcrystals coalesce very fast and form a smooth and closed layer after a growth time of 10 min only. Electron backscatter diffraction measurements on this early stage of the layer formation show a perfect c-orientation of the ZnO microcrystals. Also high- resolution X-ray diffraction measurements support the perfect alignment of the ZnO layer and show a drastic increase in crystal quality over growth time. This increase in crystal quality is also demonstrated by low-temperature photoluminescence (PL) measurements, in which the spectra show sharp lines for the donor-bound excitons already for the ZnO microcrystals. The PL spectra also show clearly that the tendency of forming basal plane stacking faults is quite high when the ZnO microcrystals are starting to coalesce but anneal out very fast after coalescence.

The fabrication and characterization of InAs/GaSb type-II superlattice long-wavelength infrared (LWIR) photodetectors for high operating temperature (HOT) are assessed regarding possible device yield. We investigate laterally-operated photoconductors with a detector cutoff wavelength in the LWIR at an operating temperature accessible with 3-stage thermoelectric cooling, realized by suitably tailoring the layer composition. Type-II superlattices with a layer composition of 14 monolayers InAs and 7 monolayers GaSb are grown on semi-insulating 3-inch GaAs substrates. We report on the growth of three different buffer layer variants that serve as growth templates for GaSb-based layers on GaAs substrates. The characterization of 75 nominally equal single element detectors per sample evidences the reliability of device processing. The electro-optical evaluation of a randomly chosen subset indicates a high uniformity of responsivity and noise of LWIR InAs/GaSb HOT photoconductors. At 210 K, the devices operate at a cutoff wavelength of 10.5 μm and achieve a mean peak spectral detectivity of 3.3 × 108 Jones.

For more than two decades, Antimony-based type-II superlattice photodetectors for the infrared spectral range between 3-15 mu m are under development at the Fraunhofer Institute for Applied Solid State Physics (IAF). Today, Fraunhofer IAF is Germany's only national foundry for InAs/GaSb type-II superlattice detectors and we cover a wide range of aspects from basic materials research to small series production in this field. We develop single-element photodetectors for sensing systems as well as two-dimensional detector arrays for high-performance imaging and threat warning systems in the mid-wavelength and long-wavelength region of the thermal infrared. We continuously enhance our production capabilities by extending our in-line process control facilities. As a recent example, we present a semiautomatic wafer probe station that has developed into an important tool for electrooptical characterization. A large amount of the basic materials research focuses on the reduction of the dark current by the development of bandgap engineered device designs on the basis of heterojunction concepts. Recently, we have successfully demonstrated Europe's first LWIR InAs/GaSb type-II superlattice imager with 640x512 pixels with 15 mu m pitch. The demonstrator camera already delivers a good image quality and achieves a thermal resolution better than 30 mK.