Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated with a dual-layer gate dielectric of electron-cyclotron resonance (ECR) oxide and plasma-enhanced chemical vapor deposited (PECVD) oxide, with a maximum process temperature of 150°C, using excimer laser annealing. We demonstrate effective carrier mobilities > 90 cm2/Vs, threshold voltage 35 V. These are the best results reported to date for any TFT technology compatible with polyester substrates.
Y. Tung合作论文数1
Tsu-Jae King Liu合作论文数College of Engineering, University of California, Berkeley1Paul G. Carey合作论文数1
Steven D. Theiss合作论文数Graphics Business Laboratory;Corporate Research Materials Laboratory;M Company;Corporate Research Materials Laboratory, M Company1Patrick M. Smith合作论文数1Verle W. Aebi合作论文数1
