High-throughput satellite (HTS) is an ideal way to realize cross-regional massive, multifaceted digital exchange services, and it requires a signal processing module that can be massively multiplexed and has high flexibility. Due to the limitations of the frequency characteristics, microwave integrated circuits are difficult to meet this requirement. One solution to this problem is photonic integrated circuits (PICs). However, full-size PIC satellite payloads containing main optoelectronic components are extremely challenging to implement on monolithic or hybrid integrated platforms. Here, the study demonstrates a hybrid integrated on-chip microwave-photonic satellite repeater with large-scale multiplexing potential and high flexibility. This is a demonstration of a hybrid integration of a InP/Si3N4 external cavity laser, arrayed InP modulators, and semiconductor optical amplifiers (SOAs), as well as multifunctional Si3N4 signal processors, to fulfill a 1 x 4 Ka-band repeater module with on-chip arrayed frequency down-conversion and outstanding narrowband photonic channelization. When combined with the full-chip photonic RF repeater, broadband, highly integrated, and cost-effective communications satellite payloads will become realizable more quickly in the near future. A hybrid integrated on-chip microwave-photonic repeater is demonstrated. An InP/Si3N4 external cavity laser, arrayed InP modulators, and amplifier, as well as multifunctional Si3N4 signal processors are combined to fulfill a photonic repeater with on-chip frequency down-conversion and narrowband photonic channelization. When combined with the full-chip photonic repeater, highly integrated communication payloads will become realizable more quickly in the near future.image

We present a hybrid integrated microwave photonic (iMWP) chip platform where Si3N4-based-TriPleX and InP optical waveguides are combined to enable broadband and high frequency radio signal processing. An iMWP beamformer for phased array antenna systems will be presented.

This paper describes our hybrid integrated microwave photonic chip platform where ultra-low-loss Si3N4-based-TriPleX (R) and active InP integrated circuits are combined to enable broadband and high frequency radio signal processing in the optical domain. The platform consists of a high-power laser, high-speed modulators and detectors. Using this platform, we demonstrated reconfigurable microwave filters, multiplexers and demultiplexers, local oscillator (LO) generation, frequency converters, and repeaters.

Integrated microwave photonics (iMWP) is a novel field in which the fast-paced progress in integrated optics is harnessed to provide breakthrough performances in well-established microwave photonic processing functions, which are traditionally realized using discrete optoelectronic components. A field where iMWP is expected to have a strong impact is the one of phased array antennas. Such arrays offer a number of attractive characteristics, including a conformal array profile, broadband beamforming (beam shaping and beam steering) and interference nulling. This, however, is very challenging to achieve using only electronics processing. For this reason, the last few years, an increasing amount of effort has been directed to the development of our hybrid chip platform where Si 3 N 4 -based-TriPleX and InP optical waveguides are combined to enable broadband and high frequency radio signal processing in the optical domain.

This paper presents an InP-Si 3 N 4 -based dual-laser hybrid optical source stabilized using an optical injection locking for the mm-wave signal generation which provides a carrier frequency at 93 GHz for a wireless communication link. We demonstrate a wireless link with a data rate up to 28 Gbps.

We present ultra-low power stress optic actuators for high-speed switching in photonic integrated circuits using the standard silicon nitride TriPleX™ platform. The stress-optic actuator is created by a piezoelectric layer (lead zirconate titanate, PZT) on top of a Si3N4-based TriPleX™ waveguide in our standard Asymmetric Double Stripe (ADS) cross section. The top cladding thickness in between the actuator and the waveguide is chosen to achieve minimal optical loss (≤0.01dB/cm). The electrodes are placed on the top of- and directly below the PZT layer allowing the generation of a vertical electric field across the layer. This electrical field deforms the PZT layer by means of the piezoelectric effect. As a consequence of the PZT deformation stress is induced in the underlying waveguide. In this way, the refractive index of the waveguide is controlled by the stress-optic effect brought about by actuating the PZT layer. To demonstrate the stress-optic based phase actuation experimentally, a Mach-Zehnder Interferometer (MZI) is employed. The MZI is designed for operation at a wavelength of 1550 nm. We measure a half-wave voltage-length product (Vπ·cm) of 16 V·cm, while the half-wave-voltage length loss product (Vπ ·L·α) is 1.6 V·dB only. The 2π phase shift would be at 42 V. The measured response time is 4.25 μs. The quasi-DC power dissipation is able to go down to 1 μW. Compared with conventional thermo-optic actuators these characteristics show a dramatic improvement, being a factor of 50 faster in terms of switching speed and a factor of 100 000 lower in terms of quasi-DC power dissipation. This makes stress-optic actuators an attractive choice for the next generation integrated photonic circuits where ultra-low quasi-DC power dissipation and/or fast switching time and operation in the MHz range are required.

We present the optical injection locking to a comb of a hybrid InP-Si3N4 dual laser source for high-purity mm-wave generation. Key performance parameters such as adjacent-comb-line side mode suppression ratio and locking range are reported. © 2022 The Author(s)

We for the first time, the optical injection locking (OIL) to a frequency comb of a hybrid $\text{{InP-Si}}_{3}\text{{N}}_{4}$ dual laser source for high-purity mm-wave generation through optical heterodyning. Key performance parameters of the comb line demultiplexing functionality provided by this source under OIL – such as adjacent-comb-line side mode suppression ratio (SMSR) and locking range – are reported. It is also shown that the amount of free-running drift exhibited by the hybrid lasers (which should be as little as possible to keep them within the locking range) can be minimized by reducing the amount of bias level applied to the heater-based phase actuators present in such lasers. According to the measured drift, locking range and SMSR, these lasers have potential to achieve continuous locking with SMSR levels of more than 45 dB at comb line separations higher than 9 GHz. Successful carrier generation at 93 GHz is demonstrated by locking the two lasers to an optical frequency comb achieving an ultra-stable International Telecommunication Union (ITU)-compliant signal. Both real-time and DSP-aided data transmissions are demonstrated at this frequency achieving data rates of 12.5 and 28 Gbit/s, respectively.

This paper presents a summary review of some of the available foundry services offering Silicon Photonics, comparing the key technologies available to European technology innovators that drive the technology sector. The foundries providing these unique technologies include AMF, CEA Leti, CORNERSTONE, Global Foundries, ihp, imec, and LioniX International. The review will also show examples of Silicon Photonics in emerging application domains from selected foundries.

The generation of microwave signals is dominated by photonics-based systems pushing the development of ultra-broadband wireless communication links Different photonic integrated circuits or hybrid integration devices have been proposed to implement different photonic signal generation techniques offering different semiconductor laser structures. Here, we present a hybrid integrated optical heterodyne source based on the InPSi3N4 integration platform. The module integrates two laser structures followed by different optical components to tune the generated wavelength. Each laser structure has a tuning range over >100 nm. We demonstrate the generation of a free-running beat-note from 70 to 110 GHz with a linewidth less than 108 kHz.

Optical heterodyne signal generation is the most flexible photonic microwave generation technique. Photonic integrated solutions have been shown monolithically on InP, and more recently on silicon. We present novel implementations using hybrid integration technology with silicon nitride (with high-Q resonators for extremely low linewidth) and polymer (with low permittivity material for highly efficient radiation).

Photonics-based techniques spearhead the generation of high-frequency signals in the millimeter-and Terahertz wave, crucial for ultrabroadband mobile wireless link development. Photonic integration is enabling to provide the photonic approach with added advantages of energy-efficiency, flexibility and scalability, in addition to signal quality. We present an optical heterodyne system based on a novel dual laser module containing two InP-Si3N4 hybrid lasers with intracavity wavelength selective optical filters with output optical power per laser of up to 15 dBm (31 mW), wide wavelength tuning of about 60 nm, and narrow optical linewidth below 100 kHz. To the best of our knowledge, we present for the first time the continuous-wave generation of RF frequencies over a wide tuning range from C-band (4 GHz – 8-GHz) to W-band (75 GHz – 110 GHz) achieving record low RF electrical linewidth around 108 kHz and long-term drift < 12 MHz with two free-running lasers. This is the best beat-note linewidth obtained with such an integrated source in a free-runnning regime and with a wide tuning range ever reported.

We demonstrate a broadband and continuously tunable 1×4 optical beamforming network (OBFN), based on the hybrid integration of indium phosphide (InP) components in the silicon nitride (Si3N4) platform. The photonic integrated circuit (PIC) comprises a hybrid InP-Si3N4 external cavity laser, a pair of InP phase modulators, a Si3N4 optical single-sideband full carrier (SSBFC) filter followed by four tunable optical true time delay lines (OTTDLs), and four InP photodetectors. The performance of the OBFN-PIC is experimentally characterized by measuring the link gain, noise figure, and spurious free dynamic range of the microwave photonics links. Moreover, we assess its beamforming capabilities assuming that the OBFN-PIC is part of a wireless system operating in the downlink direction and feeds a multielement antenna array. Using microwave signals at 5 and 10 GHz with quadrature amplitude modulation (QAM) formats at 500 Mbaud, we evaluate the performance of the OBFN-PIC under various configurations. An error-free performance is achieved for all the experimental cases validating the potential of the proposed OBFN-PIC for high-quality beamforming performance. To our best of knowledge, this is the first thorough performance evaluation of a fully integrated OBFN-PIC.

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si 3 N 4 in SiO 2 ) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 μ m wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.

We present a hybrid integrated laser with two gain sections coupled to one tunable cavity. The resulting laser has a record on-chip power of up to 20.7 dBm and an intrinsic linewidth of 320 Hz.

Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text J. P. Epping, R. M. Oldenbeuving, D. Geskus, I. Visscher, R. Grootjans, C. G. H. Roeloffzen, and R. G. Heideman, "High power, tunable, narrow linewidth dual gain hybrid laser," in Laser Congress 2019 (ASSL, LAC, LS&C), OSA Technical Digest (Optica Publishing Group, 2019), paper ATu1A.4. Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article

In this paper a microwave photonic broadband true time delay (TTD) continuously tuneable beamformer module for phased array antenna applications is presented. This microwave photonics beamformer is based on the hybrid integration of Indium Phosphide and Silicon Nitride chips. This paper features results from the latest transmit microwave photonic beamformer based on a completely integrated photonic assembly interface.

The development of large-scale optical quantum information processing circuits ground on the stability and reconfigurability enabled by integrated photonics. We demonstrate a reconfigurable 8×8 integrated linear optical network based on silicon nitride waveguides for quantum information processing. Our processor implements a novel optical architecture enabling any arbitrary linear transformation and constitutes the largest programmable circuit reported so far on this platform. We validate a variety of photonic quantum information processing primitives, in the form of Hong-Ou-Mandel interference, bosonic coalescence/anti-coalescence and high-dimensional single-photon quantum gates. We achieve fidelities that clearly demonstrate the promising future for large-scale photonic quantum information processing using low-loss silicon nitride.

Universal linear optical networks made of on-chip tunable beam splitters and phase shifters form a very promising platform for quantum information processing (QIP). Thanks to their phase stability and reconfigurability, they are robust and enable a variety of quantum information and communication protocols such as quantum teleportation [1], quantum key distribution [2], photonic qubit gate protocols [3] and boson sampling [4]. Two known materials for on-chip platforms are silicon-on-insulator (SOI) and doped silica, where SOI allows for a high component density due to its high index contrast and silica has a low loss.

In this paper, we present results on true time delay-based, broadband, and continuously tunable photonic beamforming modules for phased array antennas. The RF beamforming module is based on hybrid optical integration of TriPleX and InP chips. We present two types of analog photonic links (APLs) to achieve true time delay (TTD) beamforming. The parameters of the individual integrated components and their impact on the APL are discussed together with the theory for the two APLs. The measurement results of two 1x4 TTD beamforming architectures are presented. The first is based on step wise delays with a bandwidth of 10 GHz and a link gain of about -46.4 dB. The second is based on continuously tunable delays with a bandwidth of 3.5 GHz and a link gain -39.8 dB.