The recent discovery of long-range magnetic ordering in two-dimensional (2D) van der Waals solids [1], [2] has reignited the research efforts in 2D materials due to its potential for applications in spintronics and quantum technology. Most practical applications will require 2D materials displaying magnetism at room temperature. [3] –[8] 2D semiconductor transition metal dichalcogenides (TMDs), like the MX 2 family [where M=Mo, W, Re and X=S, se or Te], containing nonmagnetic elements are, in general, nonmagnetic. Nevertheless, diverse approaches have been explored to induce magnetism in these 2D-TMDs; for instance, introducing vacancies, [9] magnetic adatoms, [10] Substitutional doping, [5] –[8], [11] functionalization [10] and edge effects. [12] –[14] substitutional doping in TMDs, with different magnetic and non-magnetic atoms such as V, Co, Cr and Fe, has also been proven to induce composition dependent room-temperature magnetism. [5] –[8], [15] –[18]

The recent discovery of long-range magnetic ordering in two-dimensional (2D) van der Waals solids [1], [2] has reignited the research efforts in 2D materials due to its potential for applications in spintronics and quantum technology. Most practical applications will require 2D materials displaying magnetism at room temperature. [3] –[8] 2D semiconductor transition metal dichalcogenides (TMDs), like the MX <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> family [where M=Mo, W, Re and X=S, se or Te], containing nonmagnetic elements are, in general, nonmagnetic. Nevertheless, diverse approaches have been explored to induce magnetism in these 2D-TMDs; for instance, introducing vacancies, [9] magnetic adatoms, [10] Substitutional doping, [5] –[8], [11] functionalization [10] and edge effects. [12] –[14] substitutional doping in TMDs, with different magnetic and non-magnetic atoms such as V, Co, Cr and Fe, has also been proven to induce composition dependent room-temperature magnetism. [5] –[8], [15] –[18]

Group III monochalcogenides such as GaSe and GaS have attracted considerable interest as two-dimensional (2D) alternatives to the traditional transition metal dichalcogenides. The production of large-area films as well as the long-term ambient stability remains a challenge for scalable integration of these materials into the next generation of 2D circuitry and optoelectronic devices. In this report, a simple atmospheric-pressure chemical vapor deposition method is proposed to synthesize continuous monolayers of GaSe and GaS. The proposed method utilizes commercially available precursors and does not requires vacuum-sealed ampules or exfoliation. The optimal parameters for continuous monolayer self-limited growth were determined by systematically changing the growth time, the gas flow rate, and the amount of precursors. So far, the study of bare monolayer GaSe by Raman spectroscopy has been difficult due to the very low Raman signal and a rapid laser-induced oxidation of the material. A laser-scanning method that minimizes the cumulative laser damage and allows a reasonable signal-to-noise ratio was utilized to study the time-dependent ambient stability of bare and encapsulated monolayer samples by Raman spectroscopy. Our results reveal that bare GaSe monolayers can stand up to 6 h in air before complete degradation, and encapsulation with transparent polymeric films can delay this process for few days. These results open the door to produce large-area films of monolayer group III monochalcogenides and to consider film encapsulation with different transparent polymers that could further extend the long-term durability of these ambient sensitive 2D materials.

Conventional therapeutic techniques treat patients by delivering biotherapeutics to the entire body. With targeted delivery, biotherapeutics are transported to the afflicted tissue reducing exposure to healthy tissue. Targeted delivery devices are minimally composed of a stimuli responsive polymer allowing triggered release and magnetic nanoparticles enabling targeting as well as alternating magnetic field (AMF) heating. Although more traditional methods, like emulsion polymerization, have been used to realize such devices, the synthesis is problematic. For example, surfactants preventing agglomeration must be removed from the product increasing time and cost. Ultraviolet (UV) photopolymerization is more efficient and ensures safety by using biocompatible substances. Reactants selected for nanogel fabrication were N-isopropylacrylamide (monomer), methylene bis-acrylamide (crosslinker), and Irgacure 2959 (photoinitiator). The 10 nm superparamagnetic nanoparticles for encapsulation were composed of iron oxide. Herein, a low-cost, scalable, and rapid, custom-built UV photoreactor with in situ, spectroscopic monitoring system is used to observe synthesis. This method also allows in situ encapsulation of the magnetic nanoparticles simplifying the process. Nanogel characterization, performed by transmission electron microscopy, reveals size-tunable nanogel spheres between 40 and 800 nm in diameter. Samples of nanogels encapsulating magnetic nanoparticles were subjected to an AMF and temperature increase was observed indicating triggered release is possible. Results presented here will have a wide range of applications in medical sciences like oncology, gene delivery, cardiology, and endocrinology.

RADA16 is a widely studied polypeptide known for its ability to self-assemble into β-sheets that form nanofibers. Here we show that it is possible to self-crosslink the molecule via 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride (EDC) as aqueous solutions. The product results in a mix of nanocrystals and near micron-size spherules. SEM and TEM pictures provide a view of the structures and nano tracking analysis gives their size distributions. FTIR analysis provides evidence for the existence of a crosslinking reaction.

A systematic study of the effect of depositing CoFe2O4 (CFO) films of various thicknesses (d = 0–600 nm) on the giant magneto-impedance (GMI) response of a soft ferromagnetic amorphous ribbon Co65Fe4Ni2Si15B14 has been performed. The CFO films were grown on the amorphous ribbons by the pulsed laser deposition technique. X-ray diffraction and transmission electron microscopy revealed a structural variation of the CFO film from amorphous to polycrystalline as the thickness of the CFO film exceeded a critical value of 300 nm. Atomic force microscopy evidenced the increase in surface roughness of the CFO film as the thickness of the CFO film was increased. These changes in the crystallinity and morphology of the CFO film were found to have a distinct impact on the GMI response of the ribbon. Relative to the bare ribbon, coating of amorphous CFO films significantly enhanced the GMI response of the ribbon, while polycrystalline CFO films decreased it considerably. The maximum GMI response was achieved near the onset of the structural transition of the CFO film. These findings are of practical importance in developing high-sensitivity magnetic sensors.

Highly textured cobalt ferrite (CFO) thin films were grown on Si (100) substrates using oblique-angle pulsed laser deposition (α-PLD). X-ray diffraction and in-depth strain analysis showed that the obliquely deposited CFO films had both enhanced orientation in the (111) crystal direction as well as tunable compressive strains as a function of the film thicknesses, in contrast to the almost strain-free polycrystalline CFO films grown using normal-incidence PLD under the same conditions. Using in situ optical plume diagnostics the growth parameters in the α-PLD process were optimized to achieve smoother film surfaces with roughness values as low as 1-2 nm as compared to the typical values of 10-12 nm in the normal-incidence PLD grown films. Cross-sectional high resolution transmission electron microscope images revealed nanocolumnar growth of single-crystals of CFO along the (111) crystallographic plane at the film-substrate interface. Magnetic measurements showed larger coercive fields (∼10 times) with similar saturation magnetization in the α-PLD-grown CFO thin films as compared to those deposited using normal-incidence PLD. Such significantly enhanced magnetic coercivity observed in CFO thin films make them ideally suited for magnetic data storage applications. A growth mechanism based on the atomic shadowing effect and strain compression-relaxation mechanism was proposed for the obliquely grown CFO thin films.

Pb depletion in Pb(Zr0.52Ti0.48)O3 (PZT) thin films has remained as a major setback in the growth of defect-free PZT thin films by pulsed laser ablation techniques. At low excimer (KrF) laser fluences, the high volatility of Pb in PZT leads to non-congruent target ablation and, consequently, non-stoichiometric films, whereas, at high laser fluences, the inherent ejection of molten droplets from the target leads to particulate laden films, which is undesirable in heterostructure growth. To overcome these issues, a dual-laser ablation (PLDDL) process that combines an excimer (KrF) laser and CO2 laser pulses was used to grow epitaxial PZT films on SrTiO3 (100) and MgO (100) substrates. Intensified-charge-coupled-detector (ICCD) images and optical emission spectroscopy of the laser-ablated plumes in PLDDL revealed a broader angular expansion and enhanced excitation of the ablated species as compared to those for single-laser ablation (PLDSL). This led to the growth of particulate-free PZT films with higher Pb content, better crystallinity, and lower surface roughness as compared to those deposited using PLDSL. For FE measurements, PZT capacitors were fabricated in situ using the latticed-matched metallic oxide, La0.7Sr0.3MnO3, as the top and bottom electrodes. PZT films deposited using PLDDL exhibited enhanced polarization for all driving voltages as compared to those deposited using PLDSL. A highest remanent polarization (Pr) of ∼91 μC/cm2 and low coercive field of ∼40 kV/cm was recorded at 9 V driving voltage. Fatigue characterization revealed that PZT films deposited using PLDDL showed unchanging polarization, even after 109 switching cycles.

High quality polycrystalline and epitaxial PbZr0.52Ti0.48O3/La0.7Sr0.3MnO3 (PZT/LSMO) multiferroic thin films were deposited on single-crystal Si (100) and SrTiO3 (STO) (100) substrates using pulsed laser deposition (PLD) technique. The deposition conditions were optimized to overcome some of the challenges during the growth of stoichiometric PZT/LSMO thin films (with LSMO as the bottom layers). The major setback of the preferential evaporation of Pb during the ablation of PZT target, which leads to the growth of non-stoichiometric, Pb-deficient PZT thin films with poor ferroelectric properties, was investigated by studying the laser-target interaction sites and intensified charge-coupled detector (ICCD) imaging of the laser-ablated plumes. X-ray studies revealed that the PZT/LSMO heterostructures deposited under the optimum conditions were highly crystalline. Atomic force microscope images showed uniform grain growth with surface roughness values as low as 1.6 nm. In- and out-of-plane magnetization measurements showed saturation of 263–310 emu/cm3 and the corresponding absence or presence of magnetic anisotropy in the PZT/LSMO heterostructures on Si and STO substrates, respectively. LSMO/PZT/LSMO capacitors showed high remnant polarizations of 25–44 μC/cm2 at coercive fields of ∼30 kV/cm. A comparative study was performed on the strained epitaxial PZT/LSMO films on STO substrates and the un-strained polycrystalline PZT/LSMO films on Si substrates.

We report the use of a dual-laser deposition process to grow stoichiometric films of the piezoelectric material PbZr0.52Ti0.48O3 (PZT) and the thermoelectric material Ba8Ga16Ge30. High volatility of Pb and Ba in these materials leads to non-stoichiometric growth in conventional PLD processes. Dual-laser ablation process preserves the Pb and Ba stoichiometry while significantly reducing the thickness variation and particulate density on the deposited films. This lead to the growth of smooth uniform films with enhanced ferroelectric and electrical properties. The dual-laser ablation combines the pulses of a KrF excimer laser (248 nm wavelength, 30 ns pulse width) and a CO2 laser (10.6 mu m wavelength, 250 ns pulse width) where the beams are spatially overlapped on the ablation target and temporally delayed. At an optimum delay that is dependent on the physical properties of the material, CO2 pulse energy is coupled into the plume, generating a high temperature plasma (>25,000K). Laser-target interaction studies have shown the evaporation to be stoichiometric. Emission spectroscopy studies have shown ten-fold increase in emission intensities in dual-laser ablation while time-gated 2D ICCD imaging studies revealed the plume expansion to be stoichiometric over a large cone-angle of the plume under these conditions. Time-of-flight investigations in concert with hydrodynamic modeling provided a clear understanding of the mechanism of dual-laser ablation. Furthermore, plasma generated in the process is highly ionized (>75%) leading to films with high density and crystallinity. This paper will show the enhancement in properties attainable by the dual-laser ablation process in comparison to the single laser ablation.

This work is an effort to evaluate the student awareness, knowledge, and interest concerning recent technological advancements, and also to foster interest toward the emerging technologies in the field related to their conventional courses. Senior level undergraduate students who are taking the Semiconductor Devices course participated in the study. We introduce one of the recent advancements in the semiconductor device field, “Intel 45 nm transistor and high-k dielectric,” through a brief one-lecture Knowledge Module (KM). Our knowledge module consists of a lecture, pre- and post-module assessments and evaluations containing a technical questionnaire and feedback surveys to measure knowledge acquisition and effectiveness of the module. The outcomes indicate a significant increase of interest about the technology and positive feedback on the module. Our future effort would measure retention, sample diversity and quantification for increased interest through statistical analysis.

We report the observation of contrasting magnetic behavior in cobalt ferrite (CFO) thin films deposited on single crystalline magnesium oxide (MgO) and strontium titanate (STO). Epitaxial films on MgO (100) with a lattice mismatch of 0.35% showed out-of-plane anisotropy whereas the films on STO (100) with a lattice mismatch of 7.4% displayed in-plane anisotropy. Stress anisotropy calculated from angle-dependent x-ray diffraction analysis confirmed that the change in anisotropy originates from the lattice mismatch. An additional low-field switching characteristic is observed in the M-H loops of the CFO films, which became prominent with lowering temperature as also evidenced from the rf transverse susceptibility measurements. The obtained results revealed that the low field switching is associated with the film-substrate interface.

Epitaxial thin films of cobalt ferrite (CFO) single layer and CFO–lead zirconium titanate (PZT) bilayers were deposited on single crystal MgO (1 0 0) and SrTiO3 (STO) (1 0 0) substrates by pulsed laser deposition. The structural properties were characterized using x-ray diffraction and atomic force microscopy. The magnetic properties of the as-grown thin films were measured at 10 and 300 K in both parallel and perpendicular magnetic fields. The CFO–PZT bilayer films showed enhanced or reduced values of magnetization as compared with those of the CFO single layer films depending on the substrate of deposition. A strain compression–relaxation mechanism was proposed in order to explain the structure–property relationships in the CFO–PZT bilayer thin films.