Filters for Extreme Ultra-Violet (EUV) lithography chemicals, like chemically amplified photoresist (CAR), are attractive because of their capabilities to remove aggregated species and reduce microbridges in high volume manufacturing. Unlike bulk filters used in high-flow circulation mode, point-of-use (POU) filter is used in single-pass mode, so the retention performance and cleanliness become the most critical factors. Earlier presentations have demonstrated the benefit of reducing on-wafer defectivities through filtration of EUV photoresists with the state-of-the-art HDPE membranes filters, Pall® sub-1nm HDPE (XPR3L). In this study, we present a novel HDPE filter specifically designed to provide high retention performance, which is mainly enabled by an improvement in retention characteristics of membrane and cleanliness in finished POU filters. The membrane was designed to have a finer pore size and better pore geometry to improve defect retention. To expedite the filter start-up process, optimized device cleaning process was applied to further improve initial cleanliness, which was indicated by GC-MS, LC-MS/MS and ICP-MS measurements, etc. Finally, the POU filters were evaluated at imec EUV cluster consisting of TEL CleanTrack™ LITHIUS Pro™-Z and ASML NXE:3400B, and comparative defect data was obtained from patterned wafers with 16nm L/S.

The polymerization of exo-[(norbornenemethoxy)methyl]-1,1,1,3,3,3-hexafluoro-2-propanol (2) using a palladium catalyst gave a significantly higher A, polymer than the endo isomer or the 80/20 mixture of endo/exo-2. To achieve similar M-w higher concentrations of formic acid chain transfer agent was needed for the exo isomer than for the 80/20 mixture. As a result, the optical density at 193 tun of the exo isomer polymer is substantially lower since less olefinic polymer end groups were formed. A subtle interplay between chain transfer mechanisms and propagation rates explains the results obtained. Isomer content in poly(2) does not affect the dissolution rate in TMAH.

A polymer comprising a first type and a second type of repeating unit which is represented by the following formula I: wherein X is selected from -CH m is an integer from 0 to 5; and wherein one of R where A is a linking group selected from methylene, a linear or branched C and wherein for the second type of repeat unit one of R

The integration of new low k dielectric materials into active devices has proven challenging due to the fragile nature of these emerging dielectrics. This has created a number of semiconductor process challenges, which to a large degree have been overcome, and the latest set of challenges is now related to die fragility in a packaged device, which manifests itself primarily in poor thermal cycling reliability. To address this limitation, a number of packaging architectures now involve the use of compliant packages or low modulus materials. Today, polynorbornene-based stress buffer coatings are well suited to respond to the challenges presented by low k integration. The polymer has attractive processing properties, such as a low cure temperature, excellent dielectric properties, and desirable mechanical properties, most notably, low residual stress after cure. The suitability of the polymer as a stress buffer layer was further validated via a Finite Element Method simulation in an assembled flip chip package. A discussion of the polymer properties, processing conditions, and the results of the finite element model (FEM) simulation will be presented.

§ Phone: +39 019 5224837, Fax: +39 019 5224485, E-mail: sangiolini@ferraniait.com ? Phone: 216-447-6401, Fax: 216-447-5342, E-mail: xiaomei.zhao@promerus.com ? Phone: 330-487-1526; Fax: 330-487-1527, Email: gfreeman@viztec.com Abstract New high-temperature (Tg>300 oC) optical polymers are under development by Ferrania S.p.A and Promerus, LLC. Substrates based on these materials demonstrate excellent chemical resistance, low O2 permeability and superb physical and optical properties. These properties offer the potential of meeting the requirements for roll-to-roll processing of flat panel displays.

The strong Lewis acid B(C6F5)(3) was found to activate complexes of nickel toward the polymerization of norbornene-type monomers. The active species in this reaction is created by the transfer Of C6F5 from boron to nickel. As a result, a class of neutral, single-component nickel complexes was developed containing two electron-withdrawing aryl ligands that polymerize norbornene and norbornenes with functional pendant groups. Active complexes include Ni(C6F5)(2)(PPh2CH2C(O)Ph), (eta(6)-toluene)Ni(C6F5)(2), and Ni(2,4,6-tris(trifluoromethyl)phenyl)(2)(1,2-dimethoxyethane). In the case of (eta(6)-toluene)Ni(C6F5)(2), isolation and characterization of low molecular weight norbornene polymers, using ethylene, indicated that each polymer chain contained a C6F5 headgroup. This points to the initiation step as being the insertion of norbornene into the Ni-C6F5 bond. The polymer microstructure as revealed by H-1 and C-13 NMR spectrometry is entirely different from that produced using the cationic nickel catalyst, [(eta(3)-crotyl)Ni(1,4-COD)]PF6. This difference in microstructure led to improved mechanical properties for 80: 20 copolymers of norbornene and 5-triethoxysilylnorbornene.

Low dielectric constant materials are critical to meeting the demand for continual reduction in feature sizes and increase in interconnect density required for future high-speed microelectronic devices. Polymers based on functionalized norbornenes are inherently attractive for these applications as they exhibit good electrical properties such as a low dielectric constant and appealing mechanical properties. Although polynorbornenes inherently possess properties that are attractive for microelectronics packaging, films of these polymers are not solvent-resistant. Solvent-resistant crosslinked films can be attained by generation of acid species to promote cationic crosslinking of epoxide side groups. This article is the second part of a two-part study investigating the crosslinking of a copolymer of decyl norbornene and epoxide norbornene. In the first part of this study, it was proposed that epoxide decomposition reactions are also possible at cure temperatures greater than 160degreesC. This decomposition mechanism results in the complete loss of crosslinkable epoxide groups while leaving the norbornene backbone intact. Although crosslinking and decomposition reactions have independent mechanisms, both reactions directly affect the level of crosslinking. In this part of the study, the solvent swelling behavior, tensile modulus, elongation to break, and residual stress were investigated for polymer films cured under various conditions to validate the proposed mechanisms. The trends observed with these properties are consistent with the counteracting nature of epoxide crosslinking and decomposition reactions. (C) 2003 Wiley Periodicals, Inc. J Appl Polym Sci 91: 1020-1029, 2004.

As features shrink below 100 nm, new exposure technologies such as 157 nm lithography are being developed. One of the critical challenges in developing these new lithographic tools and processes is the development of appropriate resist materials that can be used at these lower exposure wavelengths. Creating organic resist polymer resins for 157 nm exposure is a particularly challenging issue since many organic functional groups absorb at this wavelength. It has been previously shown that fluorinated polymers may offer the required low optical absorbance needed to serve as resist resins for 157 nm lithography. In particular, there has been interest in bis-trifluoromethyl carbinol substituted polynorbomenes (HFAPNB) and similar materials for use in photoresists. The bis-trifluoromethyl carbinol group offers a base soluble group that is sufficiently transparent to be used at 157 nm.This work has focused on the dissolution behavior and other characteristics of bis-trifluoromethyl carbinol substituted polynorbornenes. In particular, it was found that the dissolution behavior of the HFAPNB homopolymer is strongly controlled by its ability to hydrogen bond with both neighboring chains and also other small molecule additives such as dissolution inhibitors and photoacid generators. A detailed molecular level explanation for these effects is presented. The interaction of a series of commercial photoacid generators with HFAPNB polymers are presented. The use of such information for the rational design of advanced resist materials using these polymers will be discussed.

The miniaturization of microelectronic devices has created a demand for new low-dielectric-constant materials to be used as insulating layers between metal interconnects. In this study, a functionalized polynorbornene consisting of a copolymer of decyl norbornene and epoxide norbornene has been investigated as a low-temperature curing dielectric. Polynorbornenes possess properties that are attractive for microelectronics packaging; however, films of these polymers must be crosslinked in order to obtain the solvent resistance and low solvent swelling necessary for multilayer applications. Crosslinking of these materials was achieved by acid-catalyzed cationic crosslinking of epoxide side groups. The reactions that occurred during higher temperature curing of epoxy functionalized norbornene films were studied using Fourier transform infrared (FTIR) spectroscopy and thermogravimetric analysis. Epoxide crosslinking and epoxide decomposition reactions were identified and studied as a function of temperature and time. (C) 2003 Wiley Periodicals, Inc.