A review analysis of the problematic aspects of creating high-power nanosecond frequency-pulse solid-state lasers for use in various technological fields, including the electronics industry, has been carried out. Considered installations with various pumping methods (lamp and diode) in the frequency (about 100 Hz) of generation in the micron region of the infrared range. The possibilities of increasing the energy potential of influencing pulses in master oscillator-amplifier circuits, including two-pass amplification, are analyzed. Discussed possibilities and prospects for the use of lasers with active elements (AEs) on glass, as well as the synthesis of large-sized garnet single crystals with an admixture of rare earth elements and optical ceramics for the production of AEs.

A new scheme is developed for controlling the position and intensity of unpolarized radiation at several wavelengths. A feature of the optical scheme is the use of two-coordinate acousto-optic deflectors, each of which works with linearly polarized radiation (horizontal and vertical). A polarizing plate is used to separate the initial unpolarized laser radiation. Optical losses when using acousto-optic systems are estimated.

The prethreshold processes on the surface of copper and its alloys are investigated. In the absence of obvious traces of melting, while preserving the metal in a condensed state, under a nanosecond ultraviolet laser radiation energy density of 0.1-1.0 J/sm2, manifestations of high-temperature plastic deformation were observed. These are sliding and cracking along grain boundaries, within which crystallographic slipping was observed. A microprotrusion was formed on the surface of the irradiated zone, which was outwardly similar the distribution of laser radiation in the spot. The height of the microprotrusion reached 1 μm, and sometimes even more. An increase in the number of impacting impulses led to the accumulation of damage. The data obtained are in many ways similar to the acoustoplastic, electroplastic, and magnetoplastic effects. By analogy, we consider it possible to call the discovered effect optoplastic. Keywords: plastic deformation, optoplastic effect, crystallographic slip, laser.

Abstract—The effect of preliminarily implantation of chromium, titanium, molybdenum, niobium, and zirconium ions on the structure and wear resistance of cutting plates made of a WC–3

For the first time, in a single experiment, the dependence of the position of the phonon absorption peaks in the IR spectrum (range 11–40 μm) for all five stable monoisotopic germanium single crystals was studied. The dependence obtained can be used to study the mass composition of germanium of various isotopic purity.

For the first time, a detailed comprehensive study is conducted of the dry etching of dislocation and dislocation-free samples of germanium on planes {111}, {110}, and {100}. Etching is performed by exposure to pulses of nanosecond ultraviolet (UV) laser radiation of the subthreshold intensity (wavelength, 355 nm; duration, ~10 ns; energy density, ~0 . 5–1 . 3 J/cm 2 ; pulse repetition rate, 100 Hz; and divergence, 1–2 mrad). Before and after the laser heat treatment of the surface, the samples are examined using a Zygo optical profilometer and a scanning electron microscope. Features of the nature of the damage to the surfaces corresponding to different crystallographic planes of single crystals of industrial dislocation germanium are revealed. They are compared with the data on the subthreshold damage of typical dislocation-free crystals. It is shown that in dislocation samples of germanium on the {111} plane, it is possible to create a regime of exposure to radiation, leading to the formation of etch pits, which is outwardly identical to the dislocation pits detected during selective chemical etching. Their concentration corresponds in order of magnitude to the density of dislocations. On the {100} plane of dislocation samples, etching results are also found, which clearly have a crystallographic nature. At the energy density of the acting radiation ≥0.4 J/cm 2 on the surfaces of dislocation (plane {100}) and dislocation-free germanium (planes {111}, {100}, {110}), only individual spots of ~50 µm and individual microcraters of ~0.1–1 µm having crystallographic features are recorded. The possibility of the environmentally friendly detection of dislocations in germanium without the use of chemical reagents is shown.

For the first time, a detailed comprehensive study of the "dry" etching of dislocation and dislocation-free germanium samples on the {111}, {110} and {100} planes has been carried out. Etching was carried out by exposure to pulses of nanosecond UV laser radiation of subthreshold intensity (wavelength 355 nm, duration ~ 10 ns, energy density ~ 0.5–1.3 J/cm 2 , pulse repetition rate 100 Hz, divergence 1–2 mrad). Before and after laser heat treatment of the surface, the samples were examined using a Zygo optical profilometer and a scanning electron microscope. Features of the nature of damage to surfaces corresponding to different crystallographic planes of single crystals of industrial dislocation germanium are revealed. They are compared with data on subthreshold damages of typical dislocation-free crystals. It is shown that in dislocation samples of germanium on the {111} plane, it is possible to create a regime of exposure to radiation, leading to the formation of etch pits that are outwardly identical to dislocation pits detected during selective chemical etching. Their concentration corresponds in order of magnitude to the density of dislocations. On the {100} plane of dislocation samples, etching results were also found, which clearly have a crystallographic nature. At an energy density of the acting radiation ≥ 0.4 J/cm 2 , on the surfaces of dislocation ({100} plane) and dislocation-free germanium ({111}, {100}, {110} planes), only individual spots ~ 50 μm in size were registered, as well as individual microcraters ~ 0.1–1 μm in size, which do not have crystallographic features. The possibility of environmentally friendly detection of dislocations in germanium without the use of chemical reagents is shown.

A clear correspondence between the position of the peak in the IR absorption spectrum of isotopically pure germanium single crystals and the mass number of the isotope was found. The dependence obtained can be used for express analysis of the mass composition of isotopically pure germanium single crystals.

The results of the study of the possibility of maintaining the physicochemical properties of purified halogenated solvents in a stable state are summarized. Particular attention is paid to the possibility of stabilizing solvents during multiple use. The novelty is to justify the choice of the most effective stable azeotrope to remove contamination. A kinetic analysis of the physicochemical cleaning of metal optics from contaminants by azeotropes was carried out. Diagnostics of the optical breakdown threshold made it possible to find more efficient azeotropes. The results of a study of the possibility of maintaining stable properties of purified halogenated solvents are presented. Ways to increase the stability by obtaining azeotropes of high purity with an inhibitor in the distillation purification of contaminated solvents were investigated and proposed. On the example of metal optics, the fundamental idea of the physicochemical process of metal cleaning as an interconnected process of interaction between the energy characteristics of the washing mixture and the energy characteristics of the surface layer is substantiated.

The authors previously discovered a new optoplastic effect and observed it under the action of a nanosecond UV laser pulse irradiation of subcritical intensity. In this paper it is shown that under this effect no micropores arise in the subsurface layer of metal. This proves the statement that swelling of metal under laser impact of moderate (subcritical) intensity occurs due to interstitial atoms migrating to the surface and not due to melting with formation of bubbles. At a abrupt cooling (for ~20 μs) interstitial atoms migrate to the surface by the Schottky mechanism due to abnormal mass transfer and the less mobile vacancies have no time to coagulate with formation of micropores in the time of the process.

We study Ge-doped polycrystalline diamond films synthesized, using microwave plasma chemical vapor deposition (CVD) in CH4-H2 base mixtures. We compare two sources of the dopant – gaseous monogermane (GeH4) and solid Ge plates. We investigate the structure and phase composition of the obtained films, using scanning electron microscopy, photoluminescence (PL), and Raman spectroscopy. We vary the precursor gas composition to maximize the intensity of the Germanium–vacancy (Ge-V) PL signal at 602 nm and discover that, using [C]-rich gas mixtures ([CH4]=20%), we are able to increase the intensity of Ge-V signal by two orders of magnitude in comparison with Ge-doped high-quality microcrystalline films of the same thickness but grown at [CH4]=4%. The attained results may be used for the fabrication of polycrystalline diamond films and plates with high concentrations of Ge-V centers, which may serve as source material for the fabrication of submicrometer-sized luminescent diamond particles for local optical thermometry.

The prethreshold processes on the surface of copper and its alloys are investigated. In the absence of obvious traces of melting, while preserving the metal in a condensed state, under a nanosecond ultraviolet laser radiation energy density of 0.1–1.0 J/cm2, manifestations of high-temperature plastic deformation were observed. These are sliding and cracking along grain boundaries, within which crystallographic slipping was observed. A microprotrusion was formed on the surface of the irradiated zone, which was outwardly similar the distribution of laser radiation in the spot. The height of the microprotrusion reached 1 µm, and sometimes even more. An increase in the number of impacting impulses led to the accumulation of damage. The data obtained are in many ways similar to the acoustoplastic, electroplastic, and magnetoplastic effects. By analogy, we consider it possible to call the discovered effect optoplastic.

The morphology of the surfaces of single-crystal germanium, corresponding to the crystallographic planes {111}, {100}, {110}, after laser heat treatment was investigated. We used repetitively pulsed radiation of a nanosecond UV laser (wavelength is 355 nm, duration is 10 ns, energy density∼0.5 – 1.3 J/cm2) of pre-threshold intensity. It was confirmed that on the {111} plane, as a result of impact to radiation, etching pits appear, which are identical to those, that appear during selective chemical etching. It was first discovered, that on the {100} plane etching results, having a crystallographic nature, can also appear. On the {110} plane, traces of the impact of laser radiation were also observed. However, the crystallographic orientation of the plane in the traces of impact to radiation did not manifest itself explicitly.

The present work is devoted to the study of the intensification of the physicochemical processes of purification and the modes of processing of metal optics. The main theories of solubility are analyzed, the relationship of optical parameters with the energy characteristics of detergent medium in the process of physicochemical cleaning is revealed. A model of the physicochemical process of cleaning metal optics is proposed. To test it, an installation, implementing a model of the physicochemical process of removing contaminants from the surface of mirrors, was developed. It worked in a semi-automatic mode in a closed technological cycle with an automated system for monitoring the chemical purity of the optical surface both before and after cleaning, and during the process.

The production of carbide tools with polycrystalline diamond coatings, which are used for processing modern carbon composite materials, includes a number of technological techniques that ensure reliable adhesion of the coating to the substrate. This review examines these features of substrate-surface pretreatment to improve adhesion, which includes chemical etching, mechanical hardening, modification by ion beams, plasma treatment and application of buffer layers between the substrate and the coating. This review also discusses the advantages and disadvantages of the most common methods for obtaining polycrystalline diamond coatings using hot filament and deposition of coatings from microwave plasma.

The effect of nanosecond UV laser pulses on copper and low-alloy copper samples has been studied. Traces of high-temperature deformation have been found at the energy density of 0.1–1 J/cm 2 in the below-threshold regime without obvious traces of melting. They manifest themselves as the results of slipping and cracking along grain boundaries, as well as traces of crystallographic slip inside grains. The surface of the metal in the irradiated zone exhibits an uplift. The damage increases with the number of pulses. The height of the resulting uplift can reach 1 μm, and even more in some cases. The results obtained are similar to the electroplastic and magnetoplastic effects. By analogy, we propose to call the detected effect opticoplastic.

The possibility of controlling the chemical purity of the surface of optical elements by the ellipsometric method has been analyzed. The rationale of the possibility of measuring the parameters of contaminating films on the optical surface of elements by the ellipsometric method has been given simplification has been shown of the process of determining the thickness of the contaminating film while expanding the possibility of its measurement on an optical element made of different materials. Ellipsometric studies of freshly polished and used metal mirrors made of copper and copper alloy (zirconium bronze), aluminum and its alloys AMG-6, AL-9, AL-24 have been carried out. Research has also been conducted on elements made of K-8 and K-108 (State Standard 3514-94) optical glasses, which are the most typical materials used for manufacture of optical parts for laser technique of visible and near IR-range, from single crystals of NaCl, BaF2 and sapphire (Al2O3). Parameters of contaminating films on the surface of these elements have been measured. It has been concluded that it is advisable to use the ellipsometry method during the input (before carrying out physicochemical cleaning) and during the output (after cleaning) control of the optical element to assess the contamination of the optical surface and also for the quantitative analysis of the concentration of contaminants on the optical surface of the elements while working off the technology of their physicochemical cleaning.

The possibility of monitoring the chemical purity of the surface of optical components by an ellipsometric method is analyzed. The rationale for the possible measurement of the parameters of contaminating films on the optical surface of components by an ellipsometric method is examined. A simplified process for determining the thickness of a contaminating film with an extension of the feasibility of its measurement on optical components of different materials is illustrated. Ellipsometric studies of freshly polished and used metallic mirrors of copper and copper alloy (zirconium bronze), aluminum and its alloys AMG-6, AL-9, and AL-24 are carried out. Studies are also made of components composed of K-8 and K-108 (GOST 3514-94) optical glasses, the most typical materials used in manufacturing optical parts for laser technology in the visible and near IR, as well as of monocrystalline NaCl, BaF 2 , and sapphire (Al 2 O 3 ). The parameters of contaminated films on surfaces of these components are measured. It is found that the ellipsometric technique is appropropriate for use in input (prior to physical-chemical cleaning) and output (following cleaning) monitoring of optical components for evaluating the contamination of an optical surface, as well as for quantitative analysis of the concentration of contaminants on the optical surface of components in the course of completing the techniques for their physical-chemical cleaning.