This paper investigates the properties of asymmetric coupled lines built in a 0.25 /spl mu/m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.

This paper investigates a measurement method that characterizes lossy printed multiconductor transmission lines, its accuracy, the choice of measurement representations, and some simple approximations. We illustrate the method with measurements of a pair of lossy coupled asymmetric microstrip lines.