The real dielectric constant for chemical vapor deposition 3C-SiC grown on silicon (Si) has been determined at 300 K and at 5 K from an analytic fit to interference fringes in transmission over the spectral range from the near infrared to the submillimeter region. This technique is capable of high accuracy being limited typically by the sample thickness and accuracy with which the thickness is measured. The resulting real dielectric constant is lower than the values usually attributed to this material. We find: at 300 K ε 0=9.52 and ε ∞=6.38; at 5 K ε0=9.28 and ε ∞=6.22. In all cases the estimated error is ±0.8%. The observed ratio ε0 /ε∞ agrees with the Lyddane–Sachs–Teller relation to 0.1% at 300 K and 0.2% at 5 K.

Electromodulation of SiH and SiOH vibrational bands at a hydrogen-implanted SiSiO2 interface in a multiple-internal-reflectance configuration is reported. Dipole stregthening and Stark shifts are calculated and theoretical lineshapes derived from their combinations are compared with the experimental electromodulation curves.

Hydrogen has been implanted into an SiO2 film grown on a Si trapezoid substrate to form SiH and SiOH bonds. Utilizing internal reflection spectroscopy in the near infrared spectral region, we have directly observed the vibration bands of these ‘‘molecules.’’ With the application of a large electric field across this metal-oxide-semiconductor structure, the Stark effect of these vibration bands has been observed. The dependence of line intensity and line shape on the applied voltage has been studied. The sharing of voltage between the oxide film and the depletion layer in the Si is seen by its effect on the Stark intensity. These results suggest the feasibility of seeing natural hydrogen molecularly bonded in thermal oxides.

Interference effects, including multiple-beam and wide-angle, associated with luminescence from within a thin film are described. A simple geometrical model is used to calculate the s- and p-polarized luminescent light assuming electric-dipole radiation. The luminescence exhibits fringes when measured both as a function of the film thickness and as a function of the wavelength of the light. In the latter case the fringes can also show a beating effect. The model is applied to several experimental examples of cathodoluminescence in SiO(2) and an example of photoluminescence in a-Si.

The use of absorbing, multilayer interference coatings on the back sides of LiNbO(3) substrates has produced an optical system that substantially reduces reflected substrate modes in integrated optical spectrum analyzers at 830 nm over a broad range of incident angles.

The infrared internal-reflection spectra of CaF2 trapezoids in air indicate the presence of an adsorbed water film. This adsorption has been studied in a vacuum system in which the trapezoids were cleaned by baking and then exposed to water vapor. Study of the absorptance and the ratio of s- to p-polarized absorptance in the 3400 cm−1 spectral region indicates that the index of refraction of the film and the product of the extinction coefficient and the film thickness can be obtained. Analysis suggests that the index of refraction and extinction coefficient of the film on polished CaF2 surfaces are somewhat less than that of bulk water. The simplest implication is that the film has an expanded or open structure.

Fourier Transform Spectroscopic studies of inter-electric-field subband transitions in Silicon inversion layers are compared with optical properties calculated with a 5 media model and a classical dielectric function representation of the inversion layer. Qualitative discrepancies in relative intensities of the subband transitions are interpreted in terms of many-body effects.

Some problems which arise in the characterization of surfaces and coatings by internal reflection spectroscopy are described. The ir spectra of bare CaF2 trapezoids and of ThF4- and ZnSe-coated trapezoids exhibit absorption bands in the same spectral region as those of H2O and hydrocarbon impurities. In accord with previous investigations, it is observed that the absorptance due to water is much greater in the ThF4 films than in the ZnSe films or on the CaF2 surfaces. These results suggest that the water is distributed throughout the ThF4 films, whereas for ZnSe it resides primarily on the surface. In addition, a number of interesting observations on the desorption and adsorption of water and hydrocarbons to these materials are made. The experimentally observed absorptances are analyzed on the basis of the reflectance for a three-layer system. The analysis enables reasonably quantitative values for the absorption coefficient to be determined for these thin-film coatings.

Reflection and transmission measurements of an anodic-oxide film grown on GaAs have been carried out from 0.01 to 6 eV (100 to 48 000 cm−1). The dispersion in the index of refraction has been determined in the high-frequency range from an analysis of reflection interference fringes. The ir reflection and transmission spectra of crystalline arsenolite, amorphous As2O3, polycrystalline β-Ga2O3, and amorphous Ga2O3 have been measured and compared with the anodic-oxide spectrum. In the anodic oxide, three vibration bands at 305, 600, and 800 cm−1 have been found and two bands at 350 and 550 cm−1 have been inferred, all of which can be assigned to the arsenic-oxide and gallium-oxide constituents of the film. Lines assigned to arsenic oxide in the anodic oxide have much broader widths than the corresponding lines in amorphous arsenic oxide. The anodic-oxide bands are analyzed to determine their contribution to the dc dielectric constant.

The infrared reflectance of a thin film of GaAs on a GaAs substrate was measured for several samples of the type n n + and n + n . The reflectance was analyzed to determine the carrier density and mobility of film and substrate and the thickness of the film. These values are compared with independent values obtained from electrical and other measurements.

Surface polaritons are electromagnetic modes that propagate along the interface separating two media and whose fields decay exponentially away from the interface [1,2]. Surface polaritons exist in spectral ranges in which one of the media has a negative dielectric constant while the other medium has a positive dielectric constant. The negative (positive) dielectric-constant medium is referred to as the active (inactive) medium. The “source” for a surface polariton is provided for by a surface polarization charge at the interface due to the active medium.