Equiatomic B2-ordered FeRh alloy possesses unique metamagnetic phase transition above room temperature, which provides a promising route for emerging magnetic recording and spintronic applications when downsized into nanoscale. This paper presents a systematic investigation of magnetic domain in single crystal FeRh films patterned into nanoscale stripe, ring, and circle geometries to explore the evolution of involved transition behavior and magnetic anisotropy. When the characteristic size of the patterns approaches 100 nm, a pronounced supercooling phenomenon occurs; particularly in the circle patterns, the supercooling degree exceeds 15 K. This finding reveals a suppression of the conventional heterogeneity-driven antiferromagnetic nucleation mechanism by dimensional confinement related to the pattern area. Concurrently, the dimensional confinement reduces the demagnetization energy, which enables ferromagnetic FeRh to maintain robust perpendicular magnetic anisotropy up to 390 K and across a wide temperature window of 45 K. Our work not only provides a deep insight into the metamagnetic phase transition mechanism at nanoscale but also is beneficial for realizing novel device functionalities utilizing nanosized FeRh.

Current-driven spin-orbit torque (SOT) enables electrical control of magnetization for next-generation memory and logic, but reducing switching current and power consumption is still a major challenge. Topological semimetals provide an attractive platform because they combine metallic conductivity with topological states that can efficiently generate spin currents. However, while most studied systems rely on accidental band inversions, the SOT response of symmetry-enforced Dirac semimetals remains largely unexplored. Here, we demonstrate that the non-symmorphic symmetry-enforced Dirac semimetal hexagonal SrIrO3 exhibits record-high SOT efficiency. In situ angle-resolved photoemission spectroscopy on high-quality epitaxial thin films directly confirmed the topological Dirac semimetal state, revealing bulk Dirac points near the Fermi level and spin-momentum locked surface states. Leveraging these synergistic features, we achieve a very high SOT efficiency of 2.26 and a substantial spin Hall conductivity of 0.96 × 105 ([Formula: see text]- /2e) Ω-1 m-1, enabling perpendicular magnetization switching at an exceptionally low current density of 5.9 × 105 A/cm2. Our findings establish symmetry-enforced topological semimetals as a robust materials platform for achieving superior charge-spin conversion, opening a pathway toward ultra-low-power spintronic devices.

Ga-based liquid-metal (Ga-LM) microfibers are promising one-dimensional phase-change materials for variable-stiffness and electrically tunable devices. However, their solid-state properties remain difficult to control because of the polymorphism of Ga and the highly anisotropic bonding in the ambient-pressure stable α-Ga phase. Here, we investigate crystallographic orientation selection in Ga microfibers under different triggered phase-transformation pathways and clarify its influence on electrical and mechanical properties. During the triggered liquid-solid transition, the axial orientation of the resulting α-Ga single-crystal fibers is governed by the orientation of the α-Ga seed crystal and the local interfacial contact conditions. In contrast, after the triggered β-Ga→α-Ga solid-solid transition, no obvious inheritance from the initial α-Ga axial orientation is observed; instead, the final α-Ga fibers preferentially adopt an axial orientation close to [0 1 0]. This preferential orientation is attributed to a low-mismatch, low-strain transformation pathway associated with the β-Ga→α-Ga transition. The resulting α-Ga fibers exhibit pronounced electrical and mechanical anisotropy, especially between the [0 1 0] direction and the [1 0 0]/[0 0 1] directions. This work establishes a link among triggered transformation pathways, seed/interface-controlled orientation selection, and anisotropic properties in Ga microfibers, providing a strategy for tailoring liquid-metal fibers for programmable electronic and mechanically adaptive devices.

Magnetic soft materials (MSMs) represents an emerging class of composite materials that integrate magnetic responsiveness with the mechanical compliance of soft polymers, gels, and fluids. This review systematically summarizes the fundamental magneto-responsive effects-including magnetorheological, magnetoelastic, magnetothermal, magneto-driven deformation, magnetoresistive, and magnetoelectric effects-and classifies MSMs by matrix and filler type. It highlights recent multidisciplinary advancements in soft robotics, biomedical engineering, and flexible electronics, demonstrating their capabilities in untethered actuation, targeted therapy, and self-powered sensing. Finally, the review addresses persistent challenges such as multi-physics modeling and scalable fabrication, while outlining a future roadmap toward intelligent, integrated systems. This work provides a comprehensive reference for advancing the science and application of MSMs across multiple fields.

Biological neurons are highly efficient in encoding motion information, and their physical realization can inspire the development of emerging bionic machine vision technologies for autonomous driving and video monitoring applications. However, due to the difficulty in emulating the complex ion movement dynamics within neurons, the use of hardware to comprehensively emulate neuronal firing dynamics for encoding function replication remains challenging. Herein, we report a bio‐inspired artificial neuron based on a Cs 2 AgBiBr 6 memristor, which can replicate both neuronal firing and refractory period behaviors for motion information processing. We demonstrate that the bidirectional migration of Ag + and Br − ions within Cs 2 AgBiBr 6 can induce threshold conductance switching along with a strong built‐in internal electric potential, mimicking neuronal excitation–resting responses to voltage pulse stimuli. The artificial neurons can dynamically respond to continuous inputs from moving objects, encoding motion features (such as velocity, direction, and acceleration), into compressed feature maps for accurate classification and trajectory prediction. Our biomimetic encoding and prediction framework offers a promising strategy for developing neuromorphic systems with biologically realistic behaviors that may rival the capabilities of the human brain in processing complex dynamic information.

Intelligent perception with closed-loop information acquisition, processing, and feedback is critical for humanoid robots and embodied intelligence systems. Ionochromic transistors hold great potential for on-site signal processing and visual feedback. Here, we report a bioinspired ionochromic neuromorphic device with integrated signal-processing capabilities for intelligent perception and display. The transistor unit consisting of poly(3-hexylthiophene) (P3HT) and [EMIM][TFSI] (1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) ion gel, achieves synchronous conductance modulation and reversible color change via voltage-controlled ion doping effects, mimicking biological synaptic response, and color regulation in chameleons. This dual-functional behavior originates from the generation of polarons/bipolarons that reconfigure the P3HT energy levels and modify optical transitions. The device exhibits a high-contrast electrochromic transition, with absorbance at 520 nm decreasing from 36.3% to 18.9%. Furthermore, a uniform electrolyte-gated transistors array enables tactile signal visualization, verified by a visual Morse code system and robotic hand integration, realizing in situ tactile perception and accurate object recognition. This work provides an alternative solution for integrated intelligent perception, advancing the development of next-generation human-machine interaction (HMI) platforms.

Artificial synaptic transistors represent promising building blocks for time- and frequency-domain signal processing. However, most electrolyte-gated devices are constrained by fixed synaptic plasticity and frequency responses, limiting their functional versatility. Herein, we demonstrate a dual-gate MoS2 synaptic transistor, with the second gate serving as an independent control terminal to achieve gate-tunable frequency-selective characteristics. The device exhibits essential synaptic functionalities, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), and spike-frequency-dependent plasticity (SFDP). It achieves a millivolt-level gate sensitivity (down to 5 mV) and an ultralow energy consumption of similar to 187 fJ per synaptic event. Notably, the frequency-dependent response of the transistor can be dynamically modulated via the dual-gate configuration, where the second gate enables the cutoff frequency (f(c)) to be tuned from 10.79 to 12.8 Hz, providing a tunable window for high-pass signal processing. Image-processing simulations confirm that tuning the cutoff frequency allows selective enhancement of high-frequency features (e.g., edges and textures). Collectively, these findings illustrate that a dual-gate MoS2 synaptic transistor can integrate short-term plasticity, tunable frequency-selective processing, and low energy consumption into a compact platform, holding significant promise for advanced neuromorphic signal processing.

This work presents a holistic integration of environmental sustainability and enhanced sensing performance throughout the full lifecycle of magnetoresistive sensors. Utilizing industry-scale screen-printing techniques combined with eco-friendly inks (formulated from engineered Fe/Fe3O4 core-shell magnetic microparticles, bioderived polymeric binders, and water solvent), the fabrication process avoids harsh treatments and hazardous chemicals. The resulting sensors, constructed entirely from naturally sourced materials, inherently exhibit biocompatibility, biodegradability, and environmentally benign recyclability. These properties collectively demonstrate key attributes for a sustainable life cycle. Through rational engineering of the Fe/Fe3O4 core-shell structure particles, two synergistic mechanisms are activated within the composite: spin-dependent hopping across Fe3O4 shell grain boundaries and in situ magnetic flux concentration induced by Fe cores, thereby yielding an order-of-magnitude enhancement in low-field sensitivity relative to sputtered Fe film and printed Fe3O4 particle-based counterparts, resulting in a higher magnetoresistance ratio at 10 mT relative to all printed magnetoresistive sensors reported previously. The convergence of eco-sustainability and high performance enables previously unattainable disposable magnetoelectronics, unlocking new opportunities for environmentally responsible and user-safe transient electronics and Internet of Things (IoT) applications.

The rapid expansion of data-intensive applications has highlighted the fundamental limitations of traditional CMOS-based von Neumann architectures,particularly in terms of power efficiency,latency,and flexibility.Spin logic devices utilizing spin-orbit torque(SOT)present a promising pathway for nonvolatile,low-power,and in-memory computing.By manipulating electric current inputs,SOT can alter the magnetization states or domains,enabling programmable logic functions.When combined with flexible electronics fabrication techniques,these spin logic devices can be adapted into flexible forms to cater to a wide range of applications,such as wearable electronics and human-machine interfaces.In this review,we first trace the evolution of spin logic devices and then explore the operational mechanisms behind various SOT-based devices.We systematically discuss both magnetic-field-assisted and all-electric-driven logic schemes.Additionally,we review recent advancements in flexible SOT logic devices focusing on fabrication methods,thermally assisted low-power switching,and the integration of logic functions on flexible substrates.Finally,we address the current challenges and prospects for SOT-based spin logic devices,emphasizing their potential for low-power,highly integrated,and flexible spintronic computing systems.

Magnetic thin films underpin modern data storage, sensing, and on-chip microwave technologies, and reconfiguration of their magnetic properties plays a vital role. Emerging low-power, tightly integrated architectures motivate complementary control modalities with minimal thermal overhead. Strain offers a low-dissipation route for magnetic control because lattice deformation can modify exchange interactions and spin-orbit-coupled anisotropy without requiring sustained charge transport. We summarize magnetoelastic coupling, piezomagnetism, and flexomagnetism and then compare strain delivery from piezoelectric substrate to epitaxial mismatch, flexible substrate engineering, and surface acoustic waves. We mainly focus on tunable outputs of ordering temperatures, magnetization and reversal, anisotropy and resonance dynamics, and domain structures, with additional concern on spin-orbit torques and altermagnetism, aiming to provide design guidelines for next-generation low-power spintronic and magnetoelectronic devices.

Spintronic devices,characterized by non-volatility,high-speed operation,and ultra-low power consumption,hold the potential to overcome the performance limitations of the von Neumann architecture,thus emerging as a transformative paradigm for next-generation programmable logic technologies.Spintronic devices based on the spin-orbit torque are an important development direction for realizing programmable logic functions. Spin-orbit torque can efficiently drive the fast dynamics of magnetization state for various logic functions.However,due to symmetry constraints,deterministic manipulation of perpendicular magnetization cannot be achieved solely by traditional spin-orbit torque,and additional auxiliary approaches are usually required to break the symmetry.Currently,through the coordinate electric and magnetic field control or all electric approaches,the magnetization state can be deterministically operated via spin-orbit torque,enabling the dynamic reconfiguration of logic functions.In the coordinate electric and magnetic field control approaches,the methods such as utilizing localized auxiliary magnetic fields,Joule heating,and voltage controlled magnetic anisotropy(VCMA)are used to achieve deterministic switching of perpendicular magnetization.To develop spin logic devices with lower power consumption and higher integration,the methods including interlayer exchange coupling,structurally asymmetric designs,and specialized low-symmetry materials can be adopted to realize all-electrically-driven logic functions.When fabricated into flexible devices,programmable spin logic devices enable expanding their functionality with the excellent performances on diverse flexible platforms.Flexible substrates with low thermal conductivity can effectively accumulate Joule heating generated by current flow,thereby reducing the magnetic energy barrier during switching and lowering the write energy.Consequently,the development of flexible programmable spin logic devices lays the foundation for low-power flexible and wearable compute-in-memory applications.Therefore,the spin logic devices based on spin-orbit-torque show great potential in versatile scenarios.This article mainly reviews the development of programmable spin logic devices,the research status of the devices based on spin-orbit torque,and the state-of-the-art flexibilization approaches.Finally,it looks forward to the future development trends.

Most reported Cu-based photocatalysts for CO2-to-C2+ conversion rely on single-atom Cu sites, copper oxides, or Cu-based alloy systems. Herein, we report a pyrrolic-N-rich carbon nitride-supported catalyst (S/Cu-PN-g-C3N4) featuring sulfur-modulated Cu nanoclusters for highly efficient and selective photocatalytic CO2 reduction to ethylene. Under simulated solar irradiation and in the absence of cocatalysts and sacrificial reagents, S/Cu-PN-g-C3N4 achieves a C2H4 formation rate of 36.16 μmol g-1 h-1 and a C2H4 electron selectivity of 95.61% based on the detected carbonaceous products, outperforming many previously reported photocatalytic systems for ethylene production from CO2. Comprehensive spectroscopic characterizations combined with density functional theory calculations reveal that the exceptional catalytic performance originates from the synergistic electronic interaction between sulfur dopants and Cu nanoclusters. The Cu nanoclusters sites promote the generation and stabilization of key *CO intermediates, while sulfur-induced electronic modulation significantly lowers the energy barrier for the rate-determining *CO-*CO coupling step. As a result, the C-C coupling kinetics are substantially accelerated, leading to enhanced activity and selectivity toward C2H4 formation. This work demonstrates an effective strategy for regulating the electronic structure of metal nanoclusters through heteroatom engineering and provides valuable insights into the rational design of advanced photocatalysts for selective CO2-to-C2+ conversion.

Skyrmion-based devices hold considerable potential for memory, logic, and sensing applications, where precise control over skyrmion density and size is essential. While strain engineering offers an energy-efficient route to tune these properties, excessive strain can induce plastic deformation in magnetic films or lead to cracking, compromising the reliability of strain-mediated skyrmion control. Here, we demonstrate strain gradients as an effective additional control parameter in magnetic multilayers. By introducing microscale periodic wrinkled structures in sputtered Pt/Co/Ta multilayers, strain gradients with varying magnitudes and directions are generated. Magnetic force microscopy reveals that both skyrmion density and size vary synchronously with the in-plane strain gradient, enabling broader tunability than uniform strain approaches. Micromagnetic simulations confirm that these effects arise from strain and strain gradient modulation of the Dzyaloshinskii-Moriya interaction and magnetic anisotropy. Moreover, this control strategy is reversible, cyclable, and transferable across different magnetic multilayers, providing a practical avenue for precise skyrmion engineering. This approach offers significant promise for advancing flexible spintronics, skyrmion-based memory, and neuromorphic computing architectures.

ABSTRACT Phase evolution in liquid metals (LMs) is fundamental to the structural integrity and electrical reliability of LM‐based flexible conductive materials. Physical vapor deposition (PVD) is an important method for preparing LM films. However, their phase evolution during deposition, particularly under nonequilibrium conditions, remains poorly understood. Here, we report an unexpected kinetically driven pathway for Ga‐In alloy deposition, leading to the formation of solid‐liquid biphasic nanoparticles. Contrary to the ideal homogeneous co‐deposition pathway, In preferentially nucleates on the substrate to form solid cores, while liquid Ga subsequently encapsulates them, resulting in core–shell nanoparticles that are stable at room‐temperature. These metastable structures exhibit reversible thermal reconfiguration, transitioning into a homogeneous mixing state upon heating and re‐establishing phase separation at –90°C. As deposition proceeds, the system evolves continuously from discrete biphasic nanoparticles to continuous LM films. This work reveals a previously overlooked nonequilibrium growth mechanism governing multicomponent LM deposition and establishes a general strategy for constructing phase‐separated, thermally reconfigurable metallic architectures. The findings open new opportunities for adaptive conductors and flexible electronic materials.

Most reported Cu-based photocatalysts for CO2-to-C2+ conversion rely on single-atom Cu sites, copper oxides, or Cu-based alloy systems. Herein, we report a pyrrolic-N-rich carbon nitride-supported catalyst (S/Cu-PN-g-C3N4) featuring sulfur-modulated subnanometer Cu8 clusters for highly efficient and selective photocatalytic CO2 reduction to ethylene. Under simulated solar irradiation and in the absence of cocatalysts and sacrificial reagents, S/Cu-PN-g-C3N4 achieves a C2H4 formation rate of 36.16 μmol g-1 h-1 with a selectivity of 95.61%, outperforming many previously reported photocatalytic systems for ethylene production from CO2. Comprehensive spectroscopic characterizations combined with density functional theory calculations reveal that the exceptional catalytic performance originates from the synergistic electronic interaction between sulfur dopants and subnanometer Cu8 clusters. The electron-rich Cu8 sites promote the generation and stabilization of key *CO intermediates, while sulfur-induced electronic modulation significantly lowers the energy barrier for the rate-determining *CO-*CO coupling step. As a result, the C-C coupling kinetics are substantially accelerated, leading to enhanced activity and selectivity toward C2H4 formation. This work demonstrates an effective strategy for regulating the electronic structure of subnanometer metal clusters through heteroatom engineering and provides valuable insights into the rational design of advanced photocatalysts for selective CO2-to-C2+ conversion.

Two-dimensional (2D) altermagnets (AMs) are highly desirable for ultrafast, stray-field-free spintronics because they combine compensated magnetic order and momentum-dependent spin splitting with the scalability, tunability, and interface compatibility of atomically thin materials. However, practical 2D AMs remain scarce. Rather than relying solely on the search for intrinsic 2D AMs, an appealing route is to transform known 2D antiferromagnets (AFMs) into AMs through symmetry engineering. Here, we propose surface functionalization as a symmetry-guided, nonvolatile chemical switch for realizing this AFM-to-AM transformation. By breaking inversion and out-of-plane mirror symmetries while preserving the rotation symmetry connecting opposite-spin sublattices, single-sided functionalization lifts spin degeneracy and induces altermagnetic spin splitting. Using monolayer FeSe as a representative platform, first-principles calculations show that hydrogenation, oxidation, and fluorination convert spin-degenerate antiferromagnetic FeSe into a d-wave AM with pronounced momentum-dependent spin splitting. At the device level, our transport simulations reveal that the functionalized FeSe monolayer magnetic tunnel junctions exhibit giant tunnel magnetoresistance (TMR) up to 1.87×10^3%, originating from momentum-selective spin filtering between parallel and antiparallel Néel-vector configurations. The strong dependence of TMR on functionalization geometry further demonstrates that surface chemistry provides an effective control knob for altermagnetic transport. Our work establishes a symmetry-to-chemistry-to-device strategy for engineering 2D AMs and developing high-performance altermagnetic spintronic devices.

The rapid advancement of artificial intelligence (AI) and the Internet of Things (IoT) has triggered an escalating demand for high-performance, miniaturized, and multifunctional electronic information devices. Silicon-based electronics, which have laid the foundation for the electronics industry over the past few decades, are now approaching the physical limitations with the extension of Moore’s law. Two-dimensional (2D) van der Waals (vdW) materials have emerged as promising candidates for next-generation electronic devices, due to their atomic-scale thickness, wide range of material choices, and excellent physical property tunability. Notably, it has been demonstrated that 2D vdW materials can facilitate ion migration under an electric field, enabling the reversible and efficient modulation of electrical resistance. Such a characteristic unlocks new possibilities for the design and construction of multifunctional and reconfigurable information devices. This review delves into the generation and transport of nanoionics in 2D vdW materials and their impact on modifying electrical properties. It explores strategies for device architecture design and their applications in advanced information processing. The latest progress in ion-driven reconfigurable devices for memory, logic-in-memory, neuromorphic computing, and data encryption is systematically summarized. Challenges in this field and future research directions are also discussed.

The rapid advancement of artificial intelligence has placed increasingly high demands on intelligent perception systems. Conventional sensing frameworks adopt a separated mode of signal acquisition, transmission, and post-processing, which restricts the low-power and real-time implementation of intelligent perception. Ion-driven neuromorphic transistors, featuring learning, memory, temporal integration, threshold triggering, and reconfigurable neural characteristics, have emerged as an appealing candidate for replicating biological intelligent sensory systems. This review elaborates on the fundamental device architecture and ion-modulation principles of neuromorphic materials and transistors, and summarizes performance modulation strategies via the rational design of channel materials, electrolytes, and interfacial engineering. We then highlight the typical neuromorphic functionalities derived from ion–electron coupling, and discuss the integration of such devices with sensors for intelligent perception, as well as their promising applications in wearable health monitoring, robotic closed-loop control, and biointerface sensing. Future research directions are prospected, providing guidelines for the development and practical deployment of ion-driven neuromorphic devices toward low-power intelligent perception hardware.

Biological neurons are highly efficient in encoding motion information, and their physical realization can inspire the development of emerging bionic machine vision technologies for autonomous driving and video monitoring applications. However, due to the difficulty in emulating the complex ion movement dynamics within neurons, the use of hardware to comprehensively emulate neuronal firing dynamics for encoding function replication remains challenging. Herein, we report a bio-inspired artificial neuron based on a Cs2AgBiBr6 memristor, which can replicate both neuronal firing and refractory period behaviors for motion information processing. We demonstrate that the bidirectional migration of Ag+ and Br- ions within Cs2AgBiBr6 can induce threshold conductance switching along with a strong built-in internal electric potential, mimicking neuronal excitation-resting responses to voltage pulse stimuli. The artificial neurons can dynamically respond to continuous inputs from moving objects, encoding motion features (such as velocity, direction, and acceleration), into compressed feature maps for accurate classification and trajectory prediction. Our biomimetic encoding and prediction framework offers a promising strategy for developing neuromorphic systems with biologically realistic behaviors that may rival the capabilities of the human brain in processing complex dynamic information.

Earlier demonstration of magnetic film-based functionalities on flexible substrates have highlighted the importance of perpendicular magnetic anisotropy (PMA) in flexible electronics. Here we studied magnetic anisotropic properties of flexible CoFeB/Pt multilayers with various structural parameters including substrate roughness, layer thickness, and stacking period, to anatomy the involved variables on PMA magnitude. A robust PMA is achieved in flexible CoFeB/Pt multilayers after improving surface roughness of flexible substrate, which is identical to that grown on rigid substrate. CoFeB and Pt thickness dependent magnetic anisotropy analysis confirms that the PMA is originated from CoFeB/Pt interface with a constant magnitude of 0.39 erg/cm2 regardless of the stack period. However, for Pt thickness below 1.5 nm, the interfacial PMA is gradually decrease, resulting in the magnetic easy axis shifts from perpendicular to planar orientation as the stacking period increases. After excluding possible influences from interfacial roughness and magnetic interlayer interactions, the reduction in PMA is attributed to limited orbital hybridization at the interface caused by the insufficient thickness of the Pt layer.