A new automated metrology tool using infrared spectroscopic ellipsometry is presented. After a description of the instrument with special attention on the spot size, the instrument specifications are described and one application of the technique related to the IC technology is presented. We show that physical and electrical information on Ultra Shallow Junction formed by Excimer Laser annealing for the sub 100 nm node on silicon on insulator (SOI) and on bulk silicon can be obtained independently. We compare these results with conventional techniques like four points probe and secondary ion mass spectroscopy (SIMS) and show a very good agreement.

In order to characterize 300mm wafers at different stages of the IC manufacturing, a new tool based on spectroscopic ellipsometry has been recently developed at SOPRA. This new instrument called SE-300 has some important new features compared to the other ellipsometers of SOPRA or of the competition First the optical setup allows to obtained very small measurement spots down to 35x45 mu m in polychromatic light to be able to work from deep UV 190nm to near infrared; second the combined monochromator/spectrometer is directly setup on the analyser arm and allows both multichannel and scanning measurements on the same spot. Scanning measurement made with a real double monochromator including prism and grating allows very accurate measurement that can be used to extract optical indices and solve complex multilayer structures. Multichannel measurements are made through a prism/grating spectrometer with quasi-linear dispersion in wavelength. All the elements (robotics, prealigner, XYZ mapping, pattern recognition) are fully compatible with the new generation of 300mm wafers. Practical results obtained on antireflective coatings and photoresist films are presented.