We present the electronic and structural properties of monolayer ${\mathrm{WSe}}_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the ${\mathrm{WSe}}_{2}$ valence band at $\overline{\mathrm{K}}$ was ${\mathrm{\ensuremath{\Delta}}}_{\mathrm{SO}}=0.469\ifmmode\pm\else\textpm\fi{}0.008$ eV, as determined by angle-resolved photoemission spectroscopy. Synchrotron-based grazing-incidence in-plane x-ray diffraction (XRD) revealed the in-plane lattice constant of monolayer ${\mathrm{WSe}}_{2}$ to be ${a}_{{\mathrm{WSe}}_{2}}=3.2757\ifmmode\pm\else\textpm\fi{}0.0008$ \AA{}. This indicates a lattice compression of $\ensuremath{-}0.19$% relative to bulk ${\mathrm{WSe}}_{2}$. By using the experimentally determined graphene lattice constant (${a}_{\mathrm{MLG}}=2.4575\ifmmode\pm\else\textpm\fi{}0.0007$ \AA{}), we found that a $3\ifmmode\times\else\texttimes\fi{}3$ unit cell of the slightly compressed ${\mathrm{WSe}}_{2}$ is perfectly commensurate with a $4\ifmmode\times\else\texttimes\fi{}4$ graphene lattice with a mismatch below 0.03%, which could explain why the monolayer ${\mathrm{WSe}}_{2}$ is compressed on MLG. From XRD and first-principles calculations, we conclude that the observed size of strain will affect ${\mathrm{\ensuremath{\Delta}}}_{\mathrm{SO}}$ only on the order of a few meV. In addition, angle-resolved, ultraviolet, and x-ray photoelectron spectroscopies shed light on the band alignment between ${\mathrm{WSe}}_{2}$ and MLG/SiC and indicate electron transfer from graphene to the ${\mathrm{WSe}}_{2}$ monolayer. As further revealed by atomic force microscopy, the ${\mathrm{WSe}}_{2}$ island size depends on the number of carbon layers on top of the SiC substrate. This suggests that the epitaxy of ${\mathrm{WSe}}_{2}$ favors the weak van der Waals interactions with graphene, while it is perturbed by the influence of the SiC substrate and its carbon buffer layer.

The preparation of single‐phase and catalytically active GaPd2 coatings was accomplished via DC magnetron sputtering using an intermetallic sputter target. Thin and uniform layers were deposited on borosilicate glass, Si(111) and planar as well as micro‐structured stainless steel foils. The specimens were examined regarding their phase composition, film morphology and microstructure. Thin films of different layer thickness were catalytically characterized in the semi‐hydrogenation of acetylene, which was conducted at 473 K and a feed gas composition of 0.5 vol.% C2H2, 5 vol.% H2 as well as 50 vol.% C2H4 in helium. Pre‐reduction of the catalyst was found to be essential to enhance the catalytic selectivity. Sputtered GaPd2 showed a high selectivity of 73 % for the hydrogenation to ethylene at conversion levels above 80 %. The surface‐specific activity was strongly increased to 8.97 molacetylene·(A0·h)–1 compared to bulk‐ or nanoscale GaPd2 (1.93 and 0.30 molacetylene·(A0·h)–1, respectively) caused by the high specific surface area of the thin films.

Lanthanum and lanthanum nitride thin films were deposited by magnetron sputtering onto silicon wafers covered by natural oxide. In situ and real-time synchrotron radiation experiments during deposition reveal that lanthanum crystallizes in the face-centred cubic bulk phase. Lanthanum nitride, however, does not form the expected NaCl structure but crystallizes in the theoretically predicted metastable wurtzite and zincblende phases, whereas post-growth nitridation results in zincblende LaN. During deposition of the initial 2-3 nm, amorphous or disordered films with very small crystallites form, while the surface becomes smoother. At larger thicknesses, the La and LaN crystallites are preferentially oriented with the close-packed lattice planes parallel to the substrate surface. For LaN, the onset of texture formation coincides with a sudden increase in roughness. For La, the smoothing process continues even during crystal formation, up to a thickness of about 6 nm. This different growth behaviour is probably related to the lower mobility of the nitride compared with the metal. It is likely that the characteristic void structure of nitride thin films, and the similarity between the crystal structures of wurtzite LaN and La2O3, evoke the different degradation behaviours of La/B and LaN/B multilayer mirrors for off-normal incidence at 6x nm wavelength.

We establish strain engineering of ruthenium oxides as a method to controllably induce phase transitions between electronic ground states with vastly different electrical and magnetic properties. Specifically, we show that the epitaxial strain acting on Ca2RuO4 thin films on NdCaAlO4 (110), LaAlO3 (100), and LaSrAlO4 (001) substrates induces a transition from the Mott-insulating phase of bulk Ca2RuO4 into a metallic phase. Magnetometry and spin-polarized neutron reflectometry reveal a low-temperature, small-moment ferromagnetic state in Ca2RuO4 films on LaAlO3 (100) and LaSrAlO4(001). Thin-film structures may open up new ways to investigate and utilize the electronic response of ruthenates to lattice modification.

Photothermal reactions of metallic nanostructures, such as gold nanorods show appealing structural relaxations, such as bubble formation or particle modification. We have employed a pump-probe method to record the structural relaxations of a suspension of gold nanorods upon femtosecond laser excitation by pulsed X-ray scattering both with wide-angle and small-angle sensitivity. Single-pulse reactions include transient bubble formation at 20 J m-2 and irreversible nanorod reshaping at 30 J m-2. Thus the window for reversible excitation is very narrow. Additionally we could map the time-domain and fluence behaviour in a wide range to characterize the relaxations comprehensively. The polarized laser pulse first selectively excites nanorods aligned with the laser electric field, but at higher fluence non-aligned rods are also transformed. At low fluence this transformation happens in the solid state, while at higher fluence the rods melt.

Atomically thin films of WSe2 from one monolayer up to 8 layers were deposited on an Al2O3 r-cut (11¯02) substrate using a hybrid-Pulsed Laser Deposition (PLD) system where a laser ablation of pure W is combined with a flux of Se. Specular X-ray reflectivities of films were analysed and were consistent with the expected thickness. Raman measurement and atomic force microscopy confirmed the formation of a WSe2 monolayer and its spatial homogeneity over the substrate. Grazing-incidence X-ray diffraction uncovered an in-plane texture in which WSe2 [101¯0] preferentially aligned with Al2O3 [112¯0]. These results present a potential to create 2D transition metal dichalcogenides by PLD, where the growth kinetics can be steered in contrast to common growth techniques like chemical vapor deposition and molecular beam epitaxy.

Transition metal oxides are promising candidates for thermoelectric applications, because they are stable at high temperature and because strong electronic correlations can generate large Seebeck coefficients, but their thermoelectric power factors are limited by the low electrical conductivity. We report transport measurements on Ca3Co4O9 films on various perovskite substrates and show that reversible incorporation of oxygen into SrTiO3 and LaAlO3 substrates activates a parallel conduction channel for p-type carriers, greatly enhancing the thermoelectric performance of the film-substrate system at temperatures above 450 °C. Thin-film structures that take advantage of both electronic correlations and the high oxygen mobility of transition metal oxides thus open up new perspectives for thermopower generation at high temperature.

Pulsed laser ablation in liquids (PLAL) is a multiscale process, involving multiple mutually interacting phenomena. In order to synthesize nanoparticles with well-defined properties it is important to understand the dynamics of the underlying structure evolution. We use visible-light stroboscopic imaging and X-ray radiography to investigate the dynamics occurring during PLAL of silver and gold on a macroscopic scale, whilst X-ray small angle scattering is utilized to deepen the understanding on particle genesis. By comparing our results with earlier reports we can elucidate the role of the cavitation bubble. We find that symmetry breaking at the liquid-solid interface is a critical factor for bubble motion and that the bubble motion acts on the particle distribution as confinement and retraction force to create secondary agglomerates.

Although nanoparticle synthesis by pulsed laser ablation in liquids (PLAL) is gaining wide applicability, the mechanism of particle formation, in particular size-quenching effects by dissolved anions, is not fully understood yet. It is well-known that the size of small primary particles (d <= 10 nrn), secondary particles (spherical particles d > 10 nm), and agglomerates observed ex situ is effectively reduced by the addition of small amounts of monovalent electrolyte to the liquid prior to laser ablation. In this study, we focus on the particle formation and evolution inside the vapor filled cavitation bubble. This vapor phase is enriched with ions from the afore added electrolyte. By probing the cavitation bubbles' interior by means of small-angle X-ray scattering (SAXS), we are able to examine whether the size quenching reaction between nanoparticles and ions starts already during cavitation bubble confinement or if these reactions are subjected to the liquid phase. We find that particle size quenching occurs already within the first bubble oscillation (approximately 100 its after laser impact), still inside the vapor phase. Thereby we demonstrate that nanoparticle ion interactions during PLAL are in fact a gas phase phenomenon. These interactions include size reduction of both primary and secondary particles and a decreased abundance of the latter as shown by in situ SAXS and confirmed by ex situ particle analysis (e.g., static SAXS and TEM).

The thermal stability of parallel, high aspect ratio DySi2 nanowires and nanoislands self-organized on vicinal Si(001) is investigated as a function of the annealing temperature from room temperature up to 760 degrees C by in situ grazing incidence small-angle X-ray scattering (GISAXS). A transformation of the nanoobjects has been observed above a temperature of 500 degrees C. The nanowires collapse forming small islands, while the nanoislands grow in size due to Ostwald ripening. The formation of facets is observed during annealing. A comprehensive understanding of the surface morphology changes is obtained by complementing the in situ GISAXS experiment with atomic force microscopy measurements.

Incorporation of strong electron correlations into the density functional theory (DFT) for the electronic structure calculations of light lanthanides leads to a modification of interatomic forces and consequently the lattice dynamics. Using first-principles theory we demonstrate the substantial influence of the 4f electron correlations on the phonon dispersion relations of Nd. The calculations are verified by an inelastic x-ray scattering experiment performed on a single-crystalline Nd(0001) film. We show that very good agreement between the calculated and measured data is achieved when electron-electron interactions are treated by the DFT+U approach.

We report a systematic lattice dynamics study of EuSi_{2} films and nanoislands by in situ nuclear inelastic scattering on ^{151}Eu and ab initio theory. The Eu-partial phonon density of states of the nanoislands exhibits anomalous excess of phonon states at low and high energies, not present in the bulk and at the EuSi_{2}(001) surface. We demonstrate that atomic vibrations along the island-substrate interface give rise to phonon states both at low and high energies, while atomic vibrations across the island-island interface result in localized high-energy phonon modes.

The kinetics of phase transitions during formation of small-scale systems are essential for many applications. However, their experimental observation remains challenging, making it difficult to elucidate the underlying fundamental mechanisms. Here, we combine in situ and real-time synchrotron X-ray diffraction (XRD) and X-ray reflectivity (XRR) experiments with substrate curvature measurements during deposition of nanoscale Mo and Mo1-xSix films on amorphous Si (a-Si). The simultaneous measurements provide direct evidence of a spontaneous, thickness-dependent amorphous-to-crystalline (a-c) phase transition, associated with tensile stress build-up and surface roughening. This phase transformation is thermodynamically driven, the metastable amorphous layer being initially stabilized by the contributions of surface and interface energies. A quantitative analysis of the XRD data, complemented by simulations of the transformation kinetics, unveils an interface-controlled crystallization process. This a-c phase transition is also dominating the stress evolution. While stress build-up can significantly limit the performance of devices based on nanostructures and thin films, it can also trigger the formation of these structures. The simultaneous in situ access to the stress signal itself, and to its microstructural origins during structure formation, opens new design routes for tailoring nanoscale devices.

Pulsed-laser assisted nanoparticle synthesis in liquids (PLAL) is a versatile tool for nanoparticle synthesis. However, fundamental aspects of structure formation during PLAL are presently poorly understood. We analyse the spatio-temporal kinetics during PLAL by means of fast X-ray radiography (XR) and scanning small-angle X-ray scattering (SAXS), which permits us to probe the process on length scales from nanometers to millimeters with microsecond temporal resolution. We find that the global structural evolution, such as the dynamics of the vapor bubble can be correlated to the locus and evolution of silver nanoparticles. The bubble plays an important role in particle formation, as it confines the primary particles and redeposits them to the substrate. Agglomeration takes place for the confined particles in the second bubble. Additionally, upon the collapse of the second bubble a jet of confined material is ejected perpendicularly to the surface. We hypothesize that these kinetics influence the final particle size distribution and determine the quality of the resulting colloids, such as polydispersity and modality through the interplay between particle cloud compression and particle release into the liquid.

The response of solids to electromagnetic fields is of crucial importance in many areas of science and technology. Many fundamental questions remain to be answered about the dynamics of the photoexcited electrons that underpin this response, which can evolve on timescales of tens to hundreds of attoseconds. How, for example, is the photoexcited electron affected by the periodic potential as it travels in the solid, and how do the other electrons respond in these strongly correlated systems? Furthermore, control of electronic motion in solids with attosecond precision would pave the way for the development of ultrafast optoelectronics. Attosecond electron dynamics can be traced using streaking, a technique in which a strong near-infrared laser field accelerates an attosecond electron wavepacket photoemitted by an extreme ultraviolet light pulse, imprinting timing information onto it. We present attosecond streaking measurements on the wide-bandgap semiconductor tungsten trioxide, and on gold, a metal used in many nanoplasmonic devices. Information about electronic motion in the solid is encoded on the temporal properties of the photoemitted electron wavepackets, which are consistent with a spread of electron transport times to the surface following photoexcitation. (C) 2015 Optical Society of America

A portable ultrahigh-vacuum system optimized for in situ variable-temperature X-ray scattering and spectroscopy experiments at synchrotron radiation beamlines was constructed and brought into operation at the synchrotron radiation facility ANKA of the Karlsruhe Institute of Technology, Germany. Here the main features of the new instrument are described and its capabilities demonstrated. The surface morphology, structure and stoichiometry of EuSi2 nano-islands are determined by in situ grazing-incidence small-angle X-ray scattering and X-ray absorption spectroscopy. A size reduction of about a factor of two of the nano-islands due to silicide decomposition and Eu desorption is observed after sample annealing at 1270 K for 30 min.

Attosecond streaking of photoelectrons emitted by extreme ultraviolet light has begun to reveal how electrons behave during their transport within simple crystalline solids. Many sample types within nanoplasmonics, thin-film physics, and semiconductor physics, however, do not have a simple single crystal structure. The electron dynamics which underpin the optical response of plasmonic nanostructures and wide-bandgap semiconductors happen on an attosecond timescale. Measuring these dynamics using attosecond streaking will enable such systems to be specially tailored for applications in areas such as ultrafast opto-electronics. We show that streaking can be extended to this very general type of sample by presenting streaking measurements on an amorphous film of the wide-bandgap semiconductor tungsten trioxide, and on polycrystalline gold, a material that forms the basis of many nanoplasmonic devices. Our measurements reveal the near-field temporal structure at the sample surface, and photoelectron wavepacket temporal broadening consistent with a spread of electron transport times to the surface.

We present epitaxial growth of europium (Eu) on the oxygen-induced c(6×2) reconstructed (110)Nb (niobium) surface at 150°C and at 260°C for various Eu coverages. The samples are characterized by reflection high-energy electron diffraction, atomic force microscopy and low-temperature in-situ nuclear resonance scattering. At a substrate temperature of 260°C Eu forms islands with the face-centered cubic (fcc) crystal structure that is an exotic crystallographic phase for metallic europium. The deposition at 150°C results to the already reported formation of a smooth film with hexagonal symmetry. The up to now unknown initially formed intermediate phase in this growth mode is identified as EuO-type stacking of [111]Eu layers that quickly relaxes towards that of an [0001]Eu film. The analysis of the nuclear resonance scattering data unambiguously demonstrates the formation of EuO interface at 260°C that facilitates the stabilization of the strained fcc Eu lattice. No traces of EuO are found in the sample grown at 150°C.