Magnetic bilayers consisting of an epitaxially grown ferrimagnetic insulator and a heavy metal layer are attractive for spintronic application because of the opportunity for electric control and read-out of spin textures via spin orbit torque. Here, we investigate ultrathin thulium iron garnet (TmIG)/Pt bilayers when the TmIG layer thickness is 3 nm and below using a sensitive Sagnac magneto-optical Kerr effect technique. We compare the hysteresis loops from out-of-plane and in-plane applied magnetic fields. The preferred magnetization orientation evolves with the TmIG thickness and the presence of the Pt overlayer. We quantify the evolution of the magnetic anisotropy in these ultrathin films and find a significant change even when the TmIG thickness is varied by less than 1 nm. In these ultrathin films, the presence of a Pt overlayer changes the effective anisotropy field by more than a factor of 2, suggesting that the interfacial anisotropy at the Pt/TmIG interface plays a critical role in this regime.

Y3Fe5O12 is arguablythe bestmagnetic material for magnonic quantum information science (QIS) becauseof its extremely low damping. We report ultralow damping at 2 K inepitaxial Y3Fe5O12 thin films grownon a diamagnetic Y3Sc2Ga3O12 substrate that contains no rare-earth elements. Using these ultralowdamping YIG films, we demonstrate for the first time strong couplingbetween magnons in patterned YIG thin films and microwave photonsin a superconducting Nb resonator. This result paves the road towardscalable hybrid quantum systems that integrate superconducting microwaveresonators, YIG film magnon conduits, and superconducting qubits intoon-chip QIS devices.

Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in a spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and a low-symmetry, high spin-orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2-covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to a single quadruple layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.

Recent reports have shown that thulium iron garnet (TmIG) based bilayers are promising material platforms for realizing small, room-temperature skyrmions. For potential applications, it is imperative to accurately evaluate electrical readout signals of skyrmions. In this context, the topological Hall effect has been considered as a char-acteristic signature of skyrmion formation. Unlike previous studies that have modeled the anomalous Hall effect in ultrathin TmIG/Pt bilayers, we isolate its contribution to the electrical readout signal by directly measuring the magnetic hysteresis loops using a sensitive Sagnac magneto-optical Kerr effect technique. Our combined optical and electrical measurements reveal that the spin Hall topological Hall resistivity is considerably larger than previously estimated values. Our finding further indicates that skyrmions can exist at room-temperature and near-zero applied magnetic fields.

Y3Fe5O12 (YIG) thin films are typically grown on Gd3Ga5O12 (GGG) substrates; however, such YIG thin films typically suffer from significantly increased damping at low temperatures due to the interfacial exchange coupling between the YIG magnetization and the lossy Gd3+ moments in GGG. To overcome this problem, we grow high-quality epitaxial YIG(35 nm) films on a thin diamagnetic Y3Sc2.5Al2.5O12 (YSAG) bilayer on GGG, where the YSAG buffer layer eliminates the exchange coupling between YIG and GGG. As a result, we obtain a much-improved damping of 1.2 x 10(-3) at 2-5 K.

Ferromagnetic resonance force microscopy (FMRFM) is a powerful scanned probe technique that uses sub-micrometer-scale, spatially localized standing spin wave modes (LMs) to perform local ferromagnetic resonance (FMR) measurements. Here, we show the spatially resolved imaging of Gilbert damping in a ferromagnetic material (FM) using FMRFM. Typically damping is measured from the FMR linewidth. We demonstrate an approach to image the spatial variation of Gilbert damping utilizing the LM resonance peak height to measure the LM resonance cone angle. This approach enables determination of damping through field-swept FMRFM at a single excitation frequency. The extreme force sensitivity of ∼2 fN at room temperature can resolve changes of Gilbert damping as small as ∼2×10−4 at 2 GHz, corresponding to ∼0.16 Oe in FMR linewidth resolution. This high sensitivity, high spatial resolution, and single frequency imaging of Gilbert damping creates the opportunity to study spin interactions at the interface between an insulating FM and a small volume of nonmagnetic material such as atomically thin two-dimensional materials.

Ferrimagnetic insulators capped with a heavy metal are becoming an increasingly interesting materials system in spintronics due to their unique ability for electrical manipulation and detection of magnetic states and spin textures via spin-orbit torques. The ability to engineer magnetic anisotropy is a powerful tool for tuning the recently discovered phenomena in these bilayers such as electrical switching or the stabilization of topological magnetic textures. We observe large shifts in the magnetic anisotropy in Tm3Fe5O13 and Y3Fe5O12 thin films due to heavy-metal capping layers, which strongly depends on the orientation of the substrate and therefore the orientation of the epitaxial films. This work suggests large Rashba spin-orbit coupling at the metal/ferrimagneticinsulator interface, which can be engineered in spintronic devices that utilize spin-orbit torques for electrical control of the magnetization in magnetic insulators.

Interfacial magnetic anisotropy in magnetic insulators has been largely unexplored. Recently, interface-induced skyrmions and electrical control of magnetization have been discovered in insulator-based heterostructures, which demand a thorough understanding of interfacial interactions in these materials. We observe a substantial, tunable interfacial magnetic anisotropy between Tm_{3}Fe_{5}O_{12} epitaxial thin films and fifteen nonmagnetic materials spanning a significant portion of the periodic table, which we attribute to Rashba spin-orbit coupling. Our results show a clear distinction between nonmagnetic capping layers from the d block and the p block. This work offers a new path for controlling magnetic phases in magnetic insulators for low-loss spintronic applications.

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is responsible for the emergence of topological spin textures such as skyrmions in layered structures based on metallic and insulating ferromagnetic films. However, there is active debate on where the interfacial DMI resides in magnetic insulator systems. We investigate the topological Hall effect, which is an indication of spin textures, in Tm_{3}Fe_{5}O_{12} films capped with various metals. The results reveal that Pt, W, and Au induce strong interfacial DMI and topological Hall effect, while Ta and Ti cannot. This study also provides insights into the mechanism of electrical detection of spin textures in magnetic insulator heterostructures.

Topological magnetic textures such as skyrmions are being extensively studied for their potential application in spintronic devices. Recently, low-damping ferrimagnetic insulators (FMI) such as Tm3Fe5O12 have attracted significant interest as potential candidates for hosting skyrmions. Here, we report the detection of the spin-Hall topological Hall effect (SH-THE) in Pt/Tm3Fe5O12 and Pt/Y3Fe5O12 bilayers grown on various orientations of Gd3Ga5O12 substrates as well as on epitaxial buffer layers of Y3Sc2Al3O12, which separates the FMI from the substrate without sacrificing the crystal quality. The presence of SH-THE in all of the bilayers and trilayers provides evidence that rare-earth ions in either the FMI or substrate may not be critical for inducing an interfacial Dzyaloshinskii-Moriya interaction that is necessary to stabilize magnetic textures. Additionally, the use of substrates with various crystal orientations alters the magnetic anisotropy, which shifts the temperatures and strength of the SH-THE.

Perpendicular magnetic anisotropy (PMA) in magnetic thin films with low coercivity is desirable for magnetic memory devices. It has been found that a (111)-oriented or textured Pt seed layer can enhance PMA and is, therefore, commonly utilized in spintronic structures. We grow (111)-oriented Pt epitaxial films via off-axis sputtering on various substrates and investigate the optimal substrate and orientation for high quality, epitaxial growth. Our results show that Pt(111) epitaxial films grow remarkably well on MgAl2O4(001) with an exceptionally narrow X-ray diffraction rocking curve. This high-quality seed layer is found to promote epitaxial growth of Pt/Co50Fe50/Pt trilayers with strong PMA comparable to many repeats of the magnetic multilayers reported previously. In addition, the Pt seed layer enhances the maximum thicknesses of Co50Fe50 that can still maintain PMA up to 1.07 nm.