Layered materials (LMs), such as graphite, hexagonal boron nitride, and transition-metal dichalcogenides, are at the center of an ever-increasing research effort, due to their scientific and technological relevance. Raman and infrared spectroscopies are accurate, non-destructive approaches to determine a wide range of properties, including the number of layers, N, and the strength of the interlayer interactions. We present a general approach to predict the complete spectroscopic fan diagrams, i.e., the relations between frequencies and N for the optically active shear and layer-breathing modes of any multilayer comprising N ≥ 2 identical layers. In order to achieve this, we combine a description of the normal modes in terms of a one-dimensional mechanical model, with symmetry arguments that describe the evolution of the point group as a function of N. Group theory is then used to identify which modes are Raman- and/or infrared-active, and to provide diagrams of the optically active modes for any stack composed of identical layers. We implement the method and algorithms in an open-source tool to assist researchers in the prediction and interpretation of such diagrams. Our work will underpin future efforts on Raman and infrared characterization of known, and yet not investigated, LMs.

The uptake of graphene-based materials calls for standardization. Silvia Milana explains what this entails.

An EU-funded open call aims at building a consortium to bridge basic and applied research on graphene and related atomically thin crystals for the development of integrated circuit technologies.

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Looking back at some of the key discoveries that shaped the field.

We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity ∼20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.

We report the exfoliation of graphite in aqueous solutions under high shear rate [∼ 108 s–1] turbulent flow conditions, with a 100% exfoliation yield. The material is stabilized without centrifugation at concentrations up to 100 g/L using carboxymethylcellulose sodium salt to formulate conductive printable inks. The sheet resistance of blade coated films is below ∼2Ω/□. This is a simple and scalable production route for conductive inks for large-area printing in flexible electronics.

We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimeter-scale chemical vapor deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5A/W and the internal 570A/W at 642 nm. This is at least 2 orders of magnitude higher than bulk-semiconductor flexible membranes. The photoconductive gain is up to 4 × 10(5). The photocurrent is in the 0.1-100 μA range. The devices are semitransparent, with 8% absorptance at 642 nm, and are stable upon bending to a curvature of 1.4 cm. These capabilities and the low-voltage operation (<1 V) make them attractive for wearable applications.

Quasiparticles are an extremely useful concept that provides a more intuitive understanding of complex phenomena in many-body physics. As such, they appear in various contexts, linking ideas across different fields and supplying a common language.

We report an on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal–silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Bottom-up approaches allow the production of ultranarrow and atomically precise graphene nanoribbons (GNRs) with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab initio simulations, we show that GNR width, edge geometry, and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm(-1) is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs and differentiates them from other sp(2) carbon nanostructures.

Graphene–polymer composites play an increasing role in photonic and optoelectronic applications, from ultrafast pulse generation to solar cells. The fabrication of an optical quality surfactant‐free graphene‐styrene methyl methacrylate composite, stable to large humidity and temperature ranges is reported. The composite is tailored for photonic applications showing wavelength‐independent linear absorption in the visible and near‐infrared. When tested in a mode‐locked laser, it allows the generation of stable ≈326 fs mode‐locked pulses at 1550 nm, unperturbed by environmental conditions. The composite continues to operate as a saturable absorber even under complete water immersion at 60 °C. This confirms its stability against high‐temperature and humidity.

We fabricate a saturable absorber mirror by coating a graphene film on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode pumped linear cavity waveguide laser inscribed in Ytterbium-doped Bismuthate Glass, with high slope and optical conversion efficiencies. The laser produces mode-locked pulses at 1039nm, with 1.5GHz repetition rate at an average 202mW output power. This performance is due to the combination of the graphene saturable absorber with the high quality laser glass.