Dose rate and dose enhancement (DE) factors were measured at fifteen gamma sources at eight different laboratories using thermoluminescent dosimeters (TLDs) from two independent sources and pMOS RADFETs, respectively. Dose enhancement factors were determined by comparing the responses of RADFETs with ceramic and gold-flashed kovar lids. Dose enhancement factors measured within Pb/Al test enclosures varied from essentially 1.0 (no enhancement) very close to a Co-60 room or tunnel source up to 1.24 within an enclosed Gammacell 220. DE factors between 1.5 and 1.8 were measured within a Pb/Al box behind a 2-inch Pb brick attenuator in a Co-60 room source. Two Cs-137 sources evaluated were characterized by DE factors extending from 1.17 up to 1.3-1.4 inside the Pb/Al box. Gamma cell dose rates determined from TLDs from the Naval Surface Warfare Center (NSWC)-Crane and Sandia National Laboratories (SNL) were generally close to expected levels. Dose rates were measured in an ARACOR 4100 X-ray source using both SNL dual-dielectric RADFETs and Radiation Experiments and Monitors (REM) thick thermal oxide RADFETs

A room Co-60 source was characterized using thermoluminescent dosimeters (TLDs) and pMOS RADFETs. Measurements were made over a range of dose rates between 0.8 and 100 mrad(Si)/s. Dose enhancement (DE) was measured using RADFETs with and without gold-flashed kovar lids. DE factors ranged from 1.05 to 2.35. A method was developed to predict dose enhancement as a function of position and test configuration. This method involves separation of direct and scattered gamma dose rate contributions.

Oxynitrides have been grown by oxidation in N2O in a standard thermal oxidation furnace. Two N2O processes have been studied: oxidation in N2O only, and two-step oxidation with initial oxidation in O-2 followed by oxidation/nitridation in N2O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electron spin resonance, and hole de-trapping using thermally-stimulated current analysis. N2O oxynitrides do not appear to have the well-known. drawbacks of NH3-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N2O oxynitrides, with the degree of improvement depending on the fabrication process.

Fast C-V measurement techniques are utilized to simultaneously probe both upper and lower interfaces of silicon-on-insulator/separation by implantation of oxygen buried oxide capacitors following exposure to pulsed ionizing irradiation. In addition to the relatively stable radiation-induced positive charge, reverse annealing is observed from both Si-SiO2 interfaces over the 200 μs to 300 s post exposure interval; this behavior is consistent with electron detrapping within the oxide. The dependence of electron detrapping on dc annealing bias is attributed to field-enhanced emission effects.

A long-term transient response mechanism has been discovered in certain GaAs FETs and FET logic circuits exposed to low level (~ 100 rad) ionizing radiation pulses. Recovery times ranging from 1 to 70 seconds have been measured following room temperature exposures. Charge trapping within the semiinsulating GaAs substrate appears to be a mechanism responsible for the observed behavior. Experiments ...

High-energy implantation of various ions into thermal oxides on silicon renders these oxides less sensitive to charge buildup when subsequently exposed to ionizing radiation. The reduced sensitivity is primarily a reduction in bias dependence and is attributed to ion-induced displacement damage in the oxide.

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation M. Simons, H. L. Hughes; Rapid Annealing of Pulse‐Radiation‐Induced Space Charge in Silicon Dioxide. J. Appl. Phys. 1 June 1971; 42 (7): 3000–3001. https://doi.org/10.1063/1.1660663 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search

Implantation of thermal oxide on silicon with 1016 N2+ cm-2 at an energy of 50 keV reduces the space charge buildup observed in the oxide when exposed subsequently to ionizing radiation. The component of radiation-induced charge buildup in the oxide attributable to the increase in fast surface states at the oxide-silicon interface is largely unaffected.