在实验室条件下测定田间常用的11种杀虫剂对小菜蛾Plutella xylostella(L.)卵寄生性天敌卷蛾分索赤眼蜂Trichogrammatoidea bactrae Nagaraja的影响.结果表明,高效氯氰菊酯、丁醚脲、阿维菌素、多杀霉素、溴虫腈、氟虫腈和杀螟丹对卷蛾分索赤眼蜂成蜂有极明显触杀毒性,成蜂接触药膜8 h后的死亡率达到89.31%～100%,丁醚脲、阿维菌素和多杀霉索能极显著降低成蜂的寄生力,溴虫腈和氟虫腈处理卵和幼虫期均显著降低卷蛾分索赤眼的成蜂羽化率,杀螟丹对卷蛾分索赤眼蜂各虫态都有极强的毒性,其处理后成蜂的羽化率几乎都为0.试验结果说明,氟啶脲、茚虫威、苏云金杆菌和虫酰肼对卷蛾分索赤眼蜂成蜂及各发育虫态均较安全,可在田间任何时候使用,而高效氯氰菊酯、丁醚脲、多杀霉素和阿维菌素的使用则应尽量避开卷蛾分索赤眼蜂成蜂期.

A design for 40 Gigabit/second/channel, low cost, integrated, four channel receiver module in an arrayed connector package with differential outputs has been simulated. The technical impetus for this project is to determine a feasible design that can offer both cost and performance acceptable for use as an optical/electronic interface to computer switches. These opto-electronic interface modules should support parallel high-speed interfaces, but at a cost point consistent with commercial applications of such devices. The design of these modules include not only design and manufacturing strategies that allow for high volume production, but also allow for attachment to the network circuit boards by conventional electronic manufacturing processes. Corning has developed commercially all of the technology necessary to implement these modules except for the amplifier electronics and the detectors, which will be purchased into the project from established commercial suppliers

We present an analysis of nonuniform mask undercut which occurs during fabrication of V-grooves by anisotropic etching of silicon. Mask undercut is known to be highly sensitive to alignment of the etch window with the <110> crystal direction. We show that the configuration of the mask patterns defining the end of the groove has a strong influence on the uniformity of the mask undercut and whether the V-groove sidewalls are true {111} or near [111] planes. Mask patterns with closed ends result in V-grooves whose sides are true (111) planes after long etches; open-ended mask patterns result in V-grooves with near (111) planes. These results can be explained in terms of step generation and movement during the etching process. Displacements of the V-groove centerline as a function of mask misalignment angle and wafer surface misorientation are calculated.

Coplanar wavcguides with discontinuous oside I avers .' on high resistivity silicon substrates are shown to enablc low loss arid matched tr'msinission lines suitable for high speed lOGb/s and 40Gb/s elcctroabsorption iiiodiilator chip applications. Experimental results and proposed carrier design are discussed.

We present silicon etch rate measurements from wagon-wheel patterns and widely separated V-grooves etched in potassium hydroxide solutions. The data indicates there is a reactant depletion effect when using wagon-wheel patterns, which obscures the true surface-reaction-rate-limited etch rate. Etch rates obtained from widely separated V-grooves, which are less influenced by reactant transport, indicate that the activation energy of {111} etching is less than that of {100} etching, in contrast to previous reports. Our experiments yield activation energies of 0.53 eV for {111} planes and 0.62 eV for {100} planes. The apparent activation energy is highly sensitive to slight angular misalignments off the {111}.

We present silicon etch rate measurements from wagon wheel patterns and widely separated V-grooves etched in KOH solutions. The data indicates there is a reactant depletion effect when using wagon wheel patterns, which obscures the true surface-reaction-rate-limited etch rate. Etch rates obtained from widely separated V-grooves, which are less influenced by reactant transport, indicate the activation energy of {111} etching is less than that of {100} etching, in contrast to previous reports. Our experiments yield activation energies of 0.53 eV for {111} planes and 0.62 eV for {100} planes. The apparent activation energy is highly sensitive to slight angular misalignments off the {111}.

We present silicon etch rate measurements from wagon wheel patterns and widely separated V-grooves etched in KOH solutions. The data indicates there is a reactant depletion effect when using wagon wheel patterns, which obscures the true surface-reaction-rate-limited etch rate. Etch rates obtained from widely separated V-grooves, which are less influenced by reactant transport, indicate the activation energy of {111} etching is less than that of {100} etching, in contrast to previous reports. Our experiments yield activation energies of 0.53 eV for {111} planes and 0.62 eV for {100} planes. The apparent activation energy is highly sensitive to slight angular misalignments off the {111}.

Flip-chip solder joint technology has been widely used in the integrated circuit (IC) packaging and optoelectronics packaging. Several solder deposition techniques have been developed. In this paper, we will report on an electroplating technique to form Pb/Sn (both eutectic and 95/5% Pb and Sn) solder joints in any shape. For some optoelectronic applications, we successfully plated the Pb/Sn solder pads larger than the under bump metallurgy (UBM). In addition to solder shape and size, solder pad profile (cross section) is one of the most important issues for passive alignment flip chip bonding of optoelectronic devices where the vertical clearance is sometimes limited to less than one micron. Our experiments show that the solder pads surface profile is highly dependent on the process conditions. We found that in addition to an electric field effect, electrolyte diffusion played a very important role in forming the solder pad profile. Based on our model, we optimized plating conditions and improved the thickness uniformity to 0.1 /spl mu/m (standard deviation) over 2-inch wafers for an average solder pad thickness of 4.6 /spl mu/m. This process reduces the cost of solder deposition as well as providing a means for controlling airborne Pb toxicity which might be found for pads deposited by vacuum deposition methods.

We have studied the formation of etch hillock defects during anisotropic etching of (100) silicon in KOH, Defect density is correlated with low etchant concentration and high etch temperature. Cathodic etch experiments indicate that hillocks form under conditions of decreased OH- ion concentration, The activation energy for defect formation is 1.2 eV, considerably higher than the energy associated with silicon removal, We propose a mechanism to explain hillock formation that involves nucleation by silicon redeposited from the etch solution, The incidence of hillocks in this model is the result of a competition between the forward and reverse etch reactions, Examination of defects by electron microscopy suggests that growth occurs preferentially on slow-etching planes, in agreement with the model predictions. [151]

Various technologies have been developed to fabricate high aspect ratio microstructures on planar surfaces. In this work, we present a technology which exploits the highly ordered pore structure of anodic aluminum oxide. Using this technology, we have fabricated 120pm high microstructures with vertical side walls; we estimate millimeter high structures with aspect ratios exceeding 1000: 1 could be achieved.

Summary form only given. We present our research results on high aspect ratio anodic aluminum oxide microstructures which is a promising technology for providing a low cost passive alignment between optical waveguides and optoelectronic devices. A schematic is given of a optical splitter assembled with anodic aluminum oxide microstructures.

We have studied the formation of etch hillock defects during anisotropic etching of (100) silicon in KOH. Defect density is correlated with low etchant concentration and high etch temperature. The activation energy for defect formation is 1.2 eV, considerably higher than the energy associated with silicon removal. Examination of defects by electron microscopy suggests that a regrowth process may be involved in defect formation