Results are presented concerning the formation kinetics of Y/sub 2/BaCuO/sub 5/ (211) and YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (123) phases during melt processing of melt quench (MQ) precursors and phase pure 123. The influence of Pt and 211 additions on microstructural development within YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// system are examined quantitatively via XRD analysis and DTA. Real time dynamic XRD analysis showed the phase reaction sequences for the MQ and phase pure 123 (SSC) precursor systems, and revealed the activation energy (E/sub a/) for 211 formation to be lower for MQ powders upon peritectic decomposition. The SSC precursors developed greater amounts of 211 at 1100/spl deg/C when compared to MQ precursors, (/spl sim/28 wgt% vs. 10 wgt% respectively). The addition of 0.5 m/o 211 additions in SSC resulted in lower 123 temperatures and E/sub a/ than that without 211 addition. Pt additions did alter the residual 211 content upon texturing. The presence of Pt with excess 211 additions was seen to inhibit 211 formation upon texturing.<>

Indium tin oxide (ITO) thin films on soda-lime-silicate (SLS) and silica glasses were fabricated using an rf plasma mist deposition process. SEM analysis showed that the ITO films consisted of uniform particle size with a size ranging from 50 to 200 nm. XRD revealed that In2O3 phase is present in the film when In:Sn ratio is 5:5 and higher. The resistivity of the ITO films was between 1 - 10 ohm-cm. The structural change near the surface of the glass was investigated by DRIFT (diffuse reflectance infrared Fourier transform) spectroscopy. The infrared results indicated that the structure near the surface was significantly changed with higher indium concentration. The coating materials create non-bridging oxygen near the surfaces. The effects of deposition time and substrate temperature were also studied.

We report new results on continuous wave Nd: YAG laser deposition of Cadmium Sulfide (CdS) thin films. Substrates were soda-lime silicate (SLS) glass, silica glass, silicon, alumina, and copper coated formvar sheets. As-deposited films were characteristically mixtures of cubic and hexagonal phases. X-ray diffraction analysis reveals that two different grain size groups are present. As revealed by SEM micrographs, films had smooth surface morphology. Transmission electron microscopy analysis reveals that grain sizes were extremely small. Also, semiconductive behavior was noted.

We report new results on continuous wave Nd:YAG laser deposition of cadmium sulfide thin films. Substrates were soda-lime silicate glass, silica glass, silicon, and copper coated formvar sheets. As deposited films were mixtures of cubic and hexagonal phases, with two different grain sizes. As revealed by SEM micrographs, films had smooth surface morphology. As revealed by TEM analysis, grain sizes were extremely small.

Results are presented concerning the formation kinetics of Y/sub 2/BaCuO/sub 5/ (211) and YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (123) phases during melt processing of melt quench (MQ) precursors and phase pure 123. The influence of Pt and 211 additions on microstructural development within YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// system are examined quantitatively via XRD analysis and DTA. Real time dynamic XRD analysis showed the phase reaction sequences for the MQ and phase pure 123 (SSC) precursor systems, and revealed the activation energy (E/sub a/) for 211 formation to be lower for MQ powders upon peritectic decomposition. The SSC precursors developed greater amounts of 211 at 1100/spl deg/C when compared to MQ precursors, (/spl sim/28 wgt% vs. 10 wgt% respectively). The addition of 0.5 m/o 211 additions in SSC resulted in lower 123 temperatures and E/sub a/ than that without 211 addition. Pt additions did alter the residual 211 content upon texturing. The presence of Pt with excess 211 additions was seen to inhibit 211 formation upon texturing.<>

We report new results on nano-scaled oxide films deposited by an RF aerosol mist plasma technique: including indium tin oxide transparent conductive films; yttria stabilized zirconia, nickel iron oxide/YSZ cermet, and lanthanum strontium manganite for fuel cell applications; Bi2Sr2Ca2Cu3Ox superconductor films; gadolinium iron oxide for magnetic heat pumps; silicon oxide for protective coatings, etc. Since this deposition process occurs in an atmospheric environment, it has potential for large scale production. The maximum deposition rate is approximately 1 micrometer per minute per centimeter squared. Substrate temperatures were between 300°C and 900°C. Crystal sizes are analyzed by XRD (Shadow Programs). Some films were also characterized by resistance, optical(IR-UV-Vis transmission/reflection and FTIR) and Mössbauer measurements. Film morphology was found to be strongly dependent on deposition parameters. Controlling the deposition rate by altering solution concentration and mist feed rates, as well as altering plasma torch settings and substrate temperature allowed the formation of different film morphologies. Film density, thickness, and crystallite size could be controlled to obtain films of differing characteristics. This is advantageous to fuel cell depositions where a dense electrolyte as well as porous electrodes (anode and cathode) are required.